公开(公告)号：US20040009308A1

公开(公告)日：2004-01-15

申请号：US10413598

申请日：2003-04-14

发明人： Rudiger Schlaf ,  Zhifeng F. Ren ,  Jianguo Wen ,  David L. Carnahan

IPC分类号： B05D005/12 ,  C23C008/00

CPC分类号： H01L51/0048 ,  C01B32/162 ,  C23C16/04 ,  C23C16/26 ,  C30B25/00 ,  C30B29/02 ,  C30B29/605 ,  G01Q70/12 ,  H01L51/0545 ,  Y10S977/876

摘要： A method of producing a branched carbon nanotube (CNT) is disclosed. The branched CNT is used with an atomic force microscope having a cantilever and a tip and that is able to measure a surface of a substrate as well as an undercut feature of the substrate that protrudes from the surface. A catalytic material is deposited onto the tip of the microscope, and the catalytic material is subjected to chemical vapor deposition. This initiates growth of a primary branch of the branched carbon nanotube such that the primary branch extends from the tip. A secondary branch is then introduced to extend from the primary branch and produce the branched carbon nanotube. The primary branch interacts with the surface of the substrate and the secondary branch interacts with the undercut feature.

摘要翻译： 公开了一种生产支链碳纳米管（CNT）的方法。 分支CNT与具有悬臂和尖端的原子力显微镜一起使用，并且能够测量衬底的表面以及从表面突出的衬底的底切特征。 将催化材料沉积在显微镜的尖端上，催化材料进行化学气相沉积。 这引发支链碳纳米管的主要分支的生长，使得主分支从尖端延伸。 然后引入次级分支以从主分支延伸并产生支化碳纳米管。 主分支与基底的表面相互作用，次分支与底切特征相互作用。

公开(公告)号：US20030203126A1

公开(公告)日：2003-10-30

申请号：US10423337

申请日：2003-04-25

发明人： Shi-Woo Rhee ,  Sang-Woo Kang ,  Won-Hee Nam

IPC分类号： C23C008/00 ,  H01L021/44 ,  C23C010/10

CPC分类号： H01L21/02142 ,  C23C16/40 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31641

摘要： The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.

摘要翻译： 本发明涉及一种使用其制备金属硅酸盐薄层的有机金属络合物和化学气相沉积（CVD）或原子层沉积（ALD）方法。 本发明的方法可以容易地制备具有所需组成的金属硅酸盐薄层，其可以有效地用作各种半导体器件的栅极绝缘层。

公开(公告)号：US20030116229A1

公开(公告)日：2003-06-26

申请号：US10298681

申请日：2002-11-18

发明人： Peter J. King ,  David M. Doyle

IPC分类号： C23C008/00

CPC分类号： C23C8/16 ,  C23C8/02

摘要： A method for forming a chromium-rich layer on the surface of a nickel alloy workpiece containing chromium includes heating the workpiece to a stable temperature of about 1100null C., and then exposing the workpiece to a gaseous mixture containing water vapor and one or more non-oxidizing gases for a short period of time. The process conditions are compatible with high temperature annealing and can be performed simultaneously with, or in conjunction with, high temperature annealing.

公开(公告)号：US20020040742A1

公开(公告)日：2002-04-11

申请号：US09854147

申请日：2001-05-12

发明人： Masahiro Kojima ,  Takashi Sudo ,  Shintaro Nakagawa ,  Masahiko Matsukawa ,  Toshio Inbe ,  Tatsuo Yoshida

IPC分类号： C23C008/00 ,  C23C022/00

CPC分类号： C23C22/83 ,  B05D7/51 ,  C23C22/78 ,  F28D17/005 ,  F28F13/18 ,  F28F2245/02

摘要： A treatment method for hydrophilicity for a heat exchanger which can maintain the deodorizing property and hydrohilicity even after a long-time use, and a heat exchanger thus treated for hydrophilicity by said method are provided. After a previous acidic washing treatment, a heat exchanger is subjected to a chemical transformation treatment to form a chemical conversion coating film using a chromium chromate treatment agent, chromium phosphate treatment agent, or treatment agent of zirconium series, followed by a treatment for hydrophilicity using a treatment agent for hydrophilicity, which contains silica particulates and polymer of vinyl alcohol series in aqueous medium in a weight ratio 30:70null70:30 and in tot al content of 1null25 weight percent, and in which said silica particulates are coated with said polymer of vinyl alcohol series, and dispersed as coated particles of the average particle diameter of 5null1000 nm in aqueous medium, to form the coating film so as to amount to 1null3 g/m2.

摘要翻译： 提供即使长时间使用也能够保持除臭性和耐水性的热交换器的亲水性处理方法和通过所述方法进行亲水处理的热交换器。 在先前的酸性洗涤处理之后，对热交换器进行化学转化处理，以使用铬酸铬处理剂，磷酸铬处理剂或锆系处理剂形成化学转化膜，然后使用 在水性介质中含有二氧化硅微粒和乙烯醇系聚合物，重量比为30:70〜70:30，总含量为1〜25重量％，其中所述二氧化硅微粒被涂覆 与所述乙烯醇系聚合物混合，在水介质中分散为平均粒径为5〜1000nm的包覆颗粒，形成涂膜至1〜3g / m 2。

公开(公告)号：US20010004479A1

公开(公告)日：2001-06-21

申请号：US09185555

申请日：1998-11-04

发明人： DAVID CHEUNG ,  WAI-FAN YAU ,  ROBERT P. MANDAL ,  SHIN-PUU JENG ,  KUOWEI LIU ,  YUNG-CHENG LU ,  MIKE BARNES ,  RALF B. WILLECKE ,  FARHAD MOGHADAM ,  TETSUYA ISHIKOWA ,  TZE POON

IPC分类号： C23C016/00 ,  C23C008/00

CPC分类号： H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.

摘要翻译： 一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。 在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。 氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。 氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。 氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。 优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平或约20W的脉冲RF功率水平 在占用周期的10％到30％的范围内达到约250W。

公开(公告)号：US20010003607A1

公开(公告)日：2001-06-14

申请号：US09449202

申请日：1999-11-24

发明人： PRABURAM GOPALRAJA ,  SERGIO EDELSTEIN ,  AVI TEPMAN ,  PEIJUN DING ,  DEBABRATA GHOSH ,  NIRMALYA MAITY

IPC分类号： C23C008/00

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408

摘要： The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step. The film quality and uniformity can be controlled by adjusting the frequency of the signal, the chamber pressure, the power supplied to each of the support member and other process parameters.

摘要翻译： 本发明提供一种通过PVD在衬底上实现适形步骤覆盖的方法和装置。 目标物提供用等离子体溅射然后电离的材料源。 通过使用例如感应线圈维持足够密集的等离子体来促进离子化。 然后将电离材料沉积在衬底上，其被偏压到负电压。 在处理期间提供给目标的信号包括负电压部分和零电压部分。 在负电压部分期间，离子被吸引到靶以引起溅射。 在零电压部分期间，终止来自靶的溅射，同时衬底上的偏压导致反溅射。 因此，负电压部分和零电压部分交替地在溅射步骤和反向溅射步骤之间循环。 可以通过调节信号的频率，室压力，提供给每个支撑构件的功率和其他工艺参数来控制膜的质量和均匀性。

公开(公告)号：US20040076767A1

公开(公告)日：2004-04-22

申请号：US10682180

申请日：2003-10-09

申请人： ASM JAPAN K.K.

发明人： Kiyoshi Satoh ,  Kamal Kishore Goundar

IPC分类号： C23C008/00 ,  C23C016/24 ,  H01L021/44

CPC分类号： C23C16/45523 ,  C23C16/325 ,  H01L21/76828 ,  H01L21/76829

摘要： A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.

摘要翻译： 通过等离子体CVD在半导体基板上形成碳化硅膜的方法包括：（a）以原料气体与原料气体的预定混合比将含有硅，碳，氢和惰性气体的原料气体引入反应室 惰性气体; （b）以混合比施加射频功率，从而形成介电常数为约4.0以上的可固化碳化硅膜; 和（c）以与步骤（b）相同的混合比率连续地施加射频功率，从而使碳化硅膜固化，得到比可固化碳化硅膜低的介电常数。

公开(公告)号：US20030196727A1

公开(公告)日：2003-10-23

申请号：US10417177

申请日：2003-04-17

申请人： Solvay Solexis, S.p.A.

发明人： Patrizia Maccone

IPC分类号： C23C008/00

CPC分类号： C23C30/00 ,  C08G65/007 ,  C23F11/173

摘要： Liquid compositions for the treatment of metal surfaces comprising: (A) a compound having formula (I): 1 (B) a fluorinated fluid, liquid at room temperature, having boiling point in the range 50null C.-250null C.

摘要翻译： 用于处理金属表面的液体组合物包括：（A）具有式（I）的化合物：（B）氟化流体，在室温下为液体，沸点在50℃-250℃

公开(公告)号：US20030049548A1

公开(公告)日：2003-03-13

申请号：US10185694

申请日：2002-06-28

发明人： Ram W. Sabnis ,  Douglas J. Guerrero ,  Terry Brewer ,  Mary J. Spencer

IPC分类号： C23C008/00 ,  G03F007/00

CPC分类号： G03F7/091 ,  Y10S430/136 ,  Y10S430/151

摘要： An improved method for applying organic antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise chemical vapor depositing (CVD) an antireflective compound on the substrate surface. In one embodiment, the compound is highly strained (e.g., having a strain energy of at least about 10 kcal/mol) and comprises two cyclic moieties joined to one another via a linkage group. The most preferred monomers are null2.2null(1,4)-naphthalenophane and null2.2null(9,10)-anthracenophane. The CVD processes comprise heating the antireflective compound so as to vaporize it, and then pyrolizing the vaporized compound to form stable diradicals which are subsequently polymerized on a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large substrate surfaces having super submicron (0.25 nullm or smaller) features.

公开(公告)号：US20020162506A1

公开(公告)日：2002-11-07

申请号：US10186071

申请日：2002-06-28

发明人： Ofer Sneh ,  Carl J. Galewski

IPC分类号： C23C016/00 ,  C23C008/00

CPC分类号： C23C16/45544 ,  C23C8/00 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/452 ,  C23C16/4554 ,  H01L21/28556 ,  H01L21/31604 ,  H01L21/31691

摘要： A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.

摘要翻译： 教导了一种用于避免沉积在诸如原子层沉积（ALD）和其它顺序化学气相沉积（CVD）工艺）的层状沉积中的膜污染的新方法和装置，其中通过使用 在进入ALD室之前，预反应室有效地导致另外污染的气体成分沉积在气体输送装置的壁元件上。