公开(公告)号：US20030037880A1

公开(公告)日：2003-02-27

申请号：US10253496

申请日：2002-09-24

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: C23F001/00 ,  C23C016/00

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Abstract translation: 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US20020096114A1

公开(公告)日：2002-07-25

申请号：US09767319

申请日：2001-01-22

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

IPC: C23F001/02

CPC classification number: H01L21/67167 ,  C23C14/56 ,  C23C16/54 ,  H01L21/67184 ,  H01L21/6719

Abstract: Apparatus and methods provide a module defining processing regions in which substrates can be processed. One embodiment of the module has a serial arrangement of processing regions, where a first processing region is disposed at a front end portion of the module and a second processing region is defined at a back end portion of the module. A substrate transfer passageway fluidly communicates the first and second processing regions.

Abstract translation: 装置和方法提供了限定可以处理衬底的处理区域的模块。 模块的一个实施例具有处理区域的串行布置，其中第一处理区域设置在模块的前端部分，并且在模块的后端部分限定第二处理区域。 衬底传送通道使第一和第二处理区域流体连通。

公开(公告)号：US20010032591A1

公开(公告)日：2001-10-25

申请号：US09775295

申请日：2001-01-31

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: H01L021/3065

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

Abstract: The invention is a plasma reactor employing a chamber having a process gas inlet and enclosing a plasma process region. The reactor includes a workpiece support pedestal within the chamber capable of supporting a workpiece at a processing location interfacing with the plasma process region, the support pedestal and the chamber defining an annulus therebetween to permit gas to be evacuated therethrough from the plasma process region. One aspect of the invention includes a ring horseshoe magnet adjacent and about one side of the annulus, the magnet being spaced from the plasma processing location by a spacing substantially greater than the smallest distance across the annulus. The invention further includes the magnet defining opposite poles which are substantially closer together than the spacing of the magnet from the processing location, the magnet being oriented to provide its maximum magnetic flux across the annulus and a minimum of the flux at the plasma processing location.

Abstract translation: 本发明是采用具有工艺气体入口并包围等离子体处理区域的室的等离子体反应器。 反应器包括在腔室内的工件支撑基座，其能够在与等离子体处理区域相接合的处理位置处支撑工件，支撑基座和腔室在其间限定环形空间，以允许气体从等离子体处理区域排出。 本发明的一个方面包括环形马蹄形磁体，其邻近和围绕环的一侧，磁体与等离子体处理位置间隔开一个明显大于穿过环形空间的最小距离的间隔。 本发明还包括磁体，其限定相对于磁体与处理位置的间隔大致更靠近在一起的磁体，磁体被定向成提供跨越环的最大磁通量和等离子体处理位置处的最小磁通量。

公开(公告)号：US20040083978A1

公开(公告)日：2004-05-06

申请号：US10602491

申请日：2003-06-23

Applicant: Applied Materials, Inc.

Inventor： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y Lee ,  James D. Carducci ,  Siamak Salimian

IPC: H01L021/306 ,  C23C016/00

CPC classification number: H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

Abstract translation: 在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。 内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性 通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。 内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道 门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

公开(公告)号：US20030038111A1

公开(公告)日：2003-02-27

申请号：US10254969

申请日：2002-09-24

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Bryan Y. Pu ,  Hongqing Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: B44C001/22 ,  G01R031/00 ,  C03C025/68

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US20010032590A1

公开(公告)日：2001-10-25

申请号：US09775173

申请日：2001-01-31

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Noorbakhsh ,  Evans Y. Lee ,  Hongqing Shan ,  Siamak Salimian ,  Paul E. Luscher ,  Michael D. Welch

IPC: H01L021/3065 ,  C23C016/00

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32623 ,  H01J37/3266

Abstract: The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.

Abstract translation: 本发明涉及一种使用包括工艺气体入口并限定等离子体处理区域的室外壳的等离子体反应器。 能够在加工位置处支撑工件的工件支撑基座面对等离子体处理区域，基座和外壳彼此间隔开，以在它们之间限定其间具有面向壁的泵送环形空间，以便允许气体从其中排出 过程区域。 一对相对的等离子体限制磁极在环形空间的相对的壁之一内，相对的磁极彼此轴向移位。 磁极在加工位置下方轴向移动一定距离，该距离超过环形面的相对壁之间的间隔的相当大的一部分。

公开(公告)号：US20040206309A1

公开(公告)日：2004-10-21

申请号：US10418996

申请日：2003-04-17

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger JR.

IPC: C23C016/00

CPC classification number: H01J37/321 ,  H01J37/32633 ,  H01J37/3266

Abstract: An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

Abstract translation: 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US20040056602A1

公开(公告)日：2004-03-25

申请号：US10235988

申请日：2002-09-04

Applicant: Applied Materials, Inc.

Inventor： Jang Gyoo Yang ,  Daniel J. Hoffman ,  James D. Carducci ,  Douglas A. Buchberger, JR. ,  Robert B. Hagen ,  Melissa Hagen ,  Matthew L. Miller ,  Kang-Lie Chiang ,  Gerardo A. Delgadino

IPC: H01J007/24

CPC classification number: H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

Abstract: A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.

Abstract translation: 用于处理半导体晶片的等离子体反应器包括限定腔室的侧壁和顶棚顶板，腔室内的工件支撑阴极具有面向天花板的工作表面，用于支撑半导体工件，用于将工艺气体引入到工作气体入口 室和具有偏置功率频率的RF偏置功率发生器。 在工作表面有一个偏置的馈电点，RF导体连接在RF偏置发电机和工作表面的偏置功率馈电点之间。 介质套管围绕RF导体的一部分，套筒具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供 一种提高工作表面等离子体离子密度均匀性的电抗。 根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF耦合环，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以增强 等离子体离子密度在工件周边附近。

公开(公告)号：US20020069970A1

公开(公告)日：2002-06-13

申请号：US10055310

申请日：2002-01-22

Applicant: Applied Materials, Inc.

Inventor： Hamid Noorbakhsh ,  Siamak Salimian ,  Paul Luscher ,  James D. Carducci ,  Evans Lee ,  Kaushik Vaidya ,  Hongqing Shan ,  Michael D. Welch

IPC: C23F001/02 ,  C23C016/00

CPC classification number: C23C16/45563 ,  C23C16/4401 ,  C23C16/4411 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/2001

Abstract: A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.

Abstract translation: 一种热控腔室衬套，其包括具有入口和出口的通道，其适于使流体流过至少部分地形成在其中的一个或多个流体通道。 腔室衬套可以包括第一衬垫，第二衬垫或第一衬垫和第二衬垫两者。 热控腔室衬里通过将流体从温度受控的流体源流过流体通道来维持预定的温度。 通过保持预定的温度，阻止膜在室衬里上的沉积，并且由于沉积膜的应力开裂引起的颗粒的产生被最小化。

公开(公告)号：US20010014540A1

公开(公告)日：2001-08-16

申请号：US09841804

申请日：2001-04-24

Applicant: Applied Materials, Inc.

Inventor： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

Abstract translation: 一种调整用于制造半导体器件的等离子体室中的阴极直流偏压的方法。 电介质屏蔽件位于等离子体和室的电接地部件的选定部分之间，例如电接地室壁。 通过控制一个或多个以下参数来调节阴极直流偏压：（1）腔室壁的表面积或由介电屏蔽件阻挡的其它接地部件; （2）电介质的厚度; （3）屏蔽和室壁之间的间隙; 和（4）介电材料的介电常数。 在装置方面，本发明是用于制造半导体器件的等离子体室，其具有带有多个弯曲通道的排气挡板。 每个通道足够长和弯曲，使得室内的等离子体的任何部分不能延伸超过通道的出口。 通过阻止等离子体到达排气泵，排气挡板减少排气泵部件上不想要的颗粒的沉积。 排气挡板还通过减少将RF功率耦合到等离子体的电接地室壁的有效表面积来减小阴极DC偏压。