公开(公告)号：US20240420953A1

公开(公告)日：2024-12-19

申请号：US18209719

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Rui Lu ,  Bo Xie ,  Wei Liu ,  Shanshan Yao ,  Xiaobo Li ,  Jingmei Liang ,  Li-Qun Xia ,  Shankar Venkataraman ,  Chi-I Lang

IPC: H01L21/02

Abstract: Exemplary processing methods may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of a silicon-containing material. The methods may include forming inductively-coupled plasma effluents of the treatment precursor. The methods may include contacting the layer of the silicon-containing material with the inductively-coupled plasma effluents of the treatment precursor to produce a treated layer of the silicon-containing material. The contacting may reduce a dielectric constant of the layer of the silicon-containing material.

公开(公告)号：US20240363337A1

公开(公告)日：2024-10-31

申请号：US18139699

申请日：2023-04-26

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Bo Xie ,  Shanshan Yao ,  Li-Qun Xia ,  Michael Haverty ,  Rui Lu ,  Xiaobo Li ,  Chi-I Lang ,  Shankar Venkataraman

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/02167 ,  C23C16/325 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274

Abstract: Semiconductor processing methods are described for forming low-κ dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

公开(公告)号：US20240071817A1

公开(公告)日：2024-02-29

申请号：US17896716

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Ruitong Xiong ,  Rui Lu ,  Xiaobo Li ,  Bo Xie ,  Yijun Liu ,  Li-Qun Xia

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/44 ,  C23C16/50 ,  H01L21/02

CPC classification number: H01L21/76829 ,  C23C16/0272 ,  C23C16/4408 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02362

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A semiconductor substrate may be positioned within the processing region. The methods may include forming a layer of low dielectric constant material on the semiconductor substrate. The methods may include purging the processing region of the one or more deposition precursors. A plasma power may be maintained at less than or about 750 W while purging the processing region. The methods may include forming an interface layer on the layer of low dielectric constant material. The methods may include forming a cap layer on the interface layer.

公开(公告)号：US20250069884A1

公开(公告)日：2025-02-27

申请号：US18238107

申请日：2023-08-25

Applicant: Applied Materials, Inc.

Inventor： Rui Lu ,  Bo Xie ,  Kent Zhao ,  Shanshan Yao ,  Xiaobo Li ,  Chi-I Lang ,  Li-Qun Xia ,  Shankar Venkataraman

IPC: H01L21/02

Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20240087881A1

公开(公告)日：2024-03-14

申请号：US17896753

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Michael Haverty ,  Shruba Gangopadhyay ,  Bo Xie ,  Yijun Liu ,  Ruitong Xiong ,  Rui Lu ,  Xiaobo Li ,  Li-Qun Xia ,  Lakmal C. Kalutarage ,  Lauren Bagby

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02348

Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20250054749A1

公开(公告)日：2025-02-13

申请号：US18366395

申请日：2023-08-07

Applicant: Applied Materials, Inc.

Inventor： Kent Zhao ,  Rui Lu ,  Bo Xie ,  Shanshan Yao ,  Xiaobo Li ,  Chi-I Lang ,  Li-Qun Xia ,  Shankar Venkataraman

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

公开(公告)号：US20240087880A1

公开(公告)日：2024-03-14

申请号：US17896734

申请日：2022-08-26

Applicant: Applied Materials, Inc.

Inventor： Shruba Gangopadhyay ,  Bhaskar Jyoti Bhuyan ,  Michael Haverty ,  Bo Xie ,  Li-Qun Xia ,  Rui Lu ,  Yijun Liu ,  Ruitong Xiong ,  Xiaobo Li ,  Lakmal C. Kalutarage ,  Lauren Bagby

IPC: H01L21/02 ,  C23C16/30 ,  H01J37/32

CPC classification number: H01L21/02126 ,  C23C16/30 ,  H01J37/32357 ,  H01J37/32724 ,  H01L21/02208 ,  H01L21/02274

Abstract: Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.