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公开(公告)号：US20160204005A1
公开(公告)日：2016-07-14
申请号：US14973079
申请日：2015-12-17
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yuji AOKI , Peter DEMONTE , Yoshinobu MORI
IPC: H01L21/67 , C23C16/458 , C23C16/455
Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a support shaft assembly. The support shaft assembly has a ring shaped susceptor, a disc shaped heat plate, and a support shaft system. The support shaft system supports the susceptor and the heat plate, such that the susceptor is supported above the heat plate defining a gap between the heat plate and the susceptor. In another embodiment, the heat plate includes a plurality of grooves and the susceptor includes a plurality of fins. The fins are configured to sit within the grooves such that the susceptor is supported above the heat plate, defining a gap between the heat plate and the susceptor. In another embodiment, a method of processing a substrate in the aforementioned embodiments is disclosed herein.
Abstract translation: 本文公开了一种用于处理衬底的处理室。 在一个实施例中，处理室包括支撑轴组件。 支撑轴组件具有环形基座，盘形加热板和支撑轴系统。 支撑轴系支撑基座和加热板，使得基座支撑在加热板上方，限定加热板和基座之间的间隙。 在另一个实施例中，加热板包括多个槽，并且基座包括多个翅片。 翅片构造成位于凹槽内，使得基座支撑在加热板上方，从而限定加热板和基座之间的间隙。 在另一个实施例中，本文公开了上述实施例中的衬底的处理方法。
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公开(公告)号：US20160281262A1
公开(公告)日：2016-09-29
申请号：US15077345
申请日：2016-03-22
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yoshinobu MORI
IPC: C30B25/12 , H01L21/02 , C23C16/458 , H01L21/687
CPC classification number: C30B25/08 , C23C16/45502 , C23C16/45565 , C23C16/4558 , C23C16/45587 , C23C16/45591 , C23C16/4581 , C23C16/4585 , C23C16/481 , C30B25/12 , C30B25/14 , C30B29/06 , F24C15/10 , H01L21/02532 , H01L21/0262 , H01L21/68735 , H01L21/68742 , H01L21/68785
Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.
Abstract translation: 公开了用于外延生长装置的腔室部件。 由顶板限定和形成的反应室。 反应气体在设置在侧壁中的反应气体供给路径中整流，使得反应室内的反应气体的流动方向上的水平分量对应于从开口的中心开始的方向的水平分量 反应气供给路径。 对外延生长装置的上侧壁，感受器和整流板的改进已经导致在衬底上形成的外延层的均匀性和形成速度的改善，导致更高的生产量和更低的缺陷。
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公开(公告)号：US20210015004A1
公开(公告)日：2021-01-14
申请号：US16566055
申请日：2019-09-10
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yoshinobu MORI
Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.
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公开(公告)号：US20180053670A1
公开(公告)日：2018-02-22
申请号：US15637930
申请日：2017-06-29
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yoshinobu MORI , Yuji AOKI
CPC classification number: H01L21/67248 , C23C16/4401 , C23C16/4405 , C23C16/4411 , C23C16/455 , C23C16/466 , C23C16/481 , C23C16/52 , C30B25/14 , H01L21/20
Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.
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公开(公告)号：US20240120229A1
公开(公告)日：2024-04-11
申请号：US17962410
申请日：2022-10-07
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yuji AOKI , Trishul BYREGOWDA SHIVALINGAIAH
IPC: H01L21/683
CPC classification number: H01L21/6833
Abstract: Embodiments of bipolar electrostatic chucks are provided herein. In some embodiments, a bipolar electrostatic chuck includes a ceramic plate; a plurality of electrodes disposed in the ceramic plate, wherein the plurality of electrodes include one or more positive electrodes arranged in a first pattern and one or more negative electrodes arranged in a second pattern; an aluminum base plate coupled to the ceramic plate; a positive conduit extending through the aluminum base plate and electrically coupled to the one or more positive electrodes, and a negative conduit extending through the aluminum base plate and electrically coupled to the one or more negative electrodes; and a first insulative tube disposed about each of the positive conduit and the negative conduit.
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Patent Agency Ranking
公开(公告)号：US20200020556A1
公开(公告)日：2020-01-16
申请号：US16584208
申请日：2019-09-26
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yoshinobu MORI , Yuji AOKI
Abstract: An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.
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公开(公告)号：US20160281263A1
公开(公告)日：2016-09-29
申请号：US15077336
申请日：2016-03-22
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yoshinobu MORI
IPC: C30B25/14 , F24C15/10 , C23C16/455
CPC classification number: C30B25/08 , C23C16/45502 , C23C16/45565 , C23C16/4558 , C23C16/45587 , C23C16/45591 , C23C16/4581 , C23C16/4585 , C23C16/481 , C30B25/12 , C30B25/14 , C30B29/06 , F24C15/10 , H01L21/02532 , H01L21/0262 , H01L21/68735 , H01L21/68742 , H01L21/68785
Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.
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公开(公告)号：US20250051910A1
公开(公告)日：2025-02-13
申请号：US18366433
申请日：2023-08-07
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yoshinobu MORI , Yuji AOKI
IPC: C23C16/44 , C23C16/458 , C23C16/46 , C30B25/10 , C30B25/12 , H01L21/687
Abstract: A pre-heat ring and a process chamber having the same are described herein. In one example, a process chamber for film deposition comprises a chamber volume, a substrate support disposed in the chamber volume, the substrate support having a radially outward surface, and a pre-heat ring surrounding the substrate support. The pre-heat ring comprises a tapered wall facing the radially outward surface. The tapered wall narrows towards a top surface of the pre-heat ring and towards the substrate support.
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公开(公告)号：US20190062909A1
公开(公告)日：2019-02-28
申请号：US16031691
申请日：2018-07-10
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yuji AOKI , Yoshinobu MORI
IPC: C23C16/455 , C23C16/458 , C23C16/44
Abstract: In one embodiment, a gas introduction insert includes a gas distribution assembly having a body, a plurality of gas injection channels formed within the gas distribution assembly, at least a portion of the plurality of gas injection channels being adjacent to a blind channel formed in the gas distribution assembly, and a rectification plate bounding one side of the plurality of gas injection channels and the blind channel, the rectification plate including a non-perforated portion corresponding to the position of the blind channel.
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公开(公告)号：US20160348275A1
公开(公告)日：2016-12-01
申请号：US15164610
申请日：2016-05-25
Applicant: Applied Materials, Inc.
Inventor： Shinichi OKI , Yuji AOKI , Yoshinobu MORI
CPC classification number: C30B25/10 , C23C16/4585 , C30B25/12
Abstract: A heat shield assembly for an epitaxy chamber is described herein. The heat shield assembly has a heat shield member and a preheat member. The heat shield member is disposed on the preheat member. The heat shield member has a cutout portion that exposes a portion of the preheat member. The preheat member has a recessed portion to receive the heat shield member.
Abstract translation: 本文描述了用于外延室的隔热组件。 隔热组件具有隔热构件和预热构件。 隔热构件设置在预热构件上。 隔热构件具有暴露预热构件的一部分的切口部分。 预热构件具有用于接纳隔热构件的凹部。
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