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公开(公告)号:US20220064474A1
公开(公告)日:2022-03-03
申请号:US17004114
申请日:2020-08-27
Applicant: Applied Materials, Inc.
Inventor: Srobona SEN , Tapashree Roy , Prerna Sonthalia Goradia , Robert Jan Visser
IPC: C09D127/18 , C09D183/08
Abstract: Embodiments described herein relate to flat optical devices and encapsulation materials for flat optical devices. One or more embodiments include a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d. The first arrangement of the first plurality of pillars includes a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first adhesion-promoting material is disposed over the first arrangement of the first plurality of pillars. A first encapsulation layer is disposed over the first adhesion-promoting material. The first encapsulation layer fills the gap g between adjacent pillars of the first plurality of pillars. The first encapsulation layer includes a fluoropolymer.
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公开(公告)号:US12216243B2
公开(公告)日:2025-02-04
申请号:US16905703
申请日:2020-06-18
Applicant: Applied Materials, Inc.
Inventor: Ludovic Godet , Tapashree Roy , Prerna Sonthalia Goradia , Srobona Sen , Robert Jan Visser , Nitin Deepak , Tapash Chakraborty
IPC: G02F1/1339 , B32B3/20 , G02B1/06
Abstract: Embodiments described herein relate to flat optical devices and methods of forming flat optical devices. One embodiment includes a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d, and a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first encapsulation layer is disposed over the first arrangement of the first plurality of pillars. The first encapsulation layer has a refractive index of about 1.0 to about 1.5. The first encapsulation layer, the substrate, and each of the pillars of the first arrangement define a first space therebetween. The first space has a refractive index of about 1.0 to about 1.5.
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公开(公告)号:US20240071792A1
公开(公告)日:2024-02-29
申请号:US17895952
申请日:2022-08-25
Applicant: Applied Materials, Inc.
Inventor: Tapashree Roy , Todd Egan , Viswanath Bavigadda , Nitin Gupta
IPC: H01L21/67 , G06K9/62 , G06N20/00 , H01L21/677
CPC classification number: H01L21/67253 , G06K9/6256 , G06N20/00 , H01L21/67742
Abstract: A method includes receiving, by a processing device, first data generated by a first sensor of a substrate processing system. The first data is generated responsive to the first sensor receiving electromagnetic radiation from a substrate held by a robot arm of a transfer chamber in the substrate processing system. The method further includes processing the first data to obtain second data. The second data includes a first indication of performance of the substrate processing system. The method further includes causing, in view of the second data, performance of a corrective actions associated with the substrate processing system.
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公开(公告)号:US12181736B2
公开(公告)日:2024-12-31
申请号:US17977376
申请日:2022-10-31
Applicant: Applied Materials, Inc.
Inventor: Tapashree Roy , Wayne McMillan , Rutger Meyer Timmerman Thijssen
Abstract: Embodiments of metasurfaces having nanostructures with desired geometric profiles and configurations are provided in the present disclosure. In one embodiment, a metasurface includes a nanostructure formed on a substrate, wherein the nanostructure is cuboidal or cylindrical in shape. In another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein each of the nanostructures has a gap greater than 35 nm spaced apart from each other. In yet another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein the nanostructures are fabricated from at least one of TiO2, silicon nitride, or amorphous silicon, or GaN or aluminum zinc oxide or any material with refractive index greater than 1.8, and absorption coefficient smaller than 0.001, the substrate is transparent with absorption coefficient smaller than 0.001.
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公开(公告)号:US12050327B2
公开(公告)日:2024-07-30
申请号:US16537326
申请日:2019-08-09
Applicant: Applied Materials, Inc.
Inventor: Jinxin Fu , Tapashree Roy , Ludovic Godet , Wayne McMillan , Robert J Visser
CPC classification number: G02B3/0068 , G02B3/0012 , G02B27/0172
Abstract: An imaging system and a method of manufacturing a metalens array is provided. The imaging system includes a metalens array, and light scattered from an object is split by the metalens array, such that an image is formed in front of an observer. The metalens array is at least partially transparent to visible light, so that the observer can also see the environment. The method of manufacturing the metalens array includes bonding together a plurality of substrates, and dicing the plurality of substrates into metalens arrays. The metalens arrays can be used in the imaging system.
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公开(公告)号:US10989840B2
公开(公告)日:2021-04-27
申请号:US15921940
申请日:2018-03-15
Applicant: Applied Materials, inc.
Inventor: Tapashree Roy , Rutger Meyer Timmerman Thijssen , Robert Jan Visser
IPC: G02F1/1335 , G02B1/00
Abstract: Embodiments described herein relate to nanostructured trans-reflective filters having sub-wavelength dimensions. In one embodiment, the trans-reflective filter includes a film stack that transmits a filtered light within a range of wavelengths and reflects light not within the first range of wavelengths. The film stack includes a first metal film disposed on a substrate having a first thickness, a first dielectric film disposed on the first metal film having a second thickness, a second metal film disposed on the first dielectric film having a third thickness, and a second dielectric film disposed on the second metal film having a fourth thickness.
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公开(公告)号:US11487139B2
公开(公告)日:2022-11-01
申请号:US16601006
申请日:2019-10-14
Applicant: Applied Materials, Inc.
Inventor: Tapashree Roy , Wayne McMillan , Rutger Meyer Timmerman Thijssen
Abstract: Embodiments of metasurfaces having nanostructures with desired geometric profiles and configurations are provided in the present disclosure. In one embodiment, a metasurface includes a nanostructure formed on a substrate, wherein the nanostructure is cuboidal or cylindrical in shape. In another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein each of the nanostructures has a gap greater than 35 nm spaced apart from each other. In yet another embodiment, a metasurface includes a plurality of nanostructures on a substrate, wherein the nanostructures are fabricated from at least one of TiO2, silicon nitride, or amorphous silicon, or GaN or aluminum zinc oxide or any material with refractive index greater than 1.8, and absorption coefficient smaller than 0.001, the substrate is transparent with absorption coefficient smaller than 0.001.
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公开(公告)号:US11001535B2
公开(公告)日:2021-05-11
申请号:US16452136
申请日:2019-06-25
Applicant: Applied Materials, Inc.
Inventor: Tapashree Roy , Rutger Meyer Timmerman Thijssen
IPC: C04B41/53 , C04B41/91 , H01J37/305 , H01L21/306 , H01L21/3063 , H01L21/67 , C30B33/10
Abstract: Embodiments of the present disclosure generally relate to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A substrate, such as a silicon wafer, is provided as a base for forming an optical device. A transparent layer is disposed on a first surface of the substrate, and a structure layer is disposed on the transparent surface. An etch mask layer is disposed on a second surface of the substrate opposite the first surface, and a window or opening is formed in the etch mask layer to expose a portion of the second surface of the substrate. A plurality of nanostructures is then formed in the structure layer, and a portion of the substrate extending from the window to the transparent layer is removed. A portion of the transparent layer having nanostructures disposed thereon is then detached from the substrate to form an optical device.
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公开(公告)号:US10707118B2
公开(公告)日:2020-07-07
申请号:US16283560
申请日:2019-02-22
Applicant: Applied Materials, Inc.
Inventor: Ludovic Godet , Wayne McMillan , Rutger Meyer Timmerman Thijssen , Naamah Argaman , Tapashree Roy , Sage Doshay
IPC: H01L21/768 , H01L21/3213 , H01L21/311 , H01L25/04 , H01L25/16
Abstract: Systems and methods herein are related to the formation of optical devices including stacked optical element layers using silicon wafers, glass, or devices as substrates. The optical elements discussed herein can be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge-coupled devices (CCD), or complementary metal-oxide semiconductor (CMOS) image sensors, light-emitting diodes (LED), a micro-LED (uLED) display, organic light-emitting diode (OLED) or vertical-cavity surface-emitting laser (VCSELs). The optical elements can have interlayers formed in between optical element layers, where the interlayers can range in thickness from 1 nm to 3 mm.
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公开(公告)号:US11626321B2
公开(公告)日:2023-04-11
申请号:US16882177
申请日:2020-05-22
Applicant: Applied Materials, Inc.
Inventor: Ludovic Godet , Wayne McMillan , Rutger Meyer Timmerman Thijssen , Naamah Argaman , Tapashree Roy , Sage Toko Garrett Doshay
IPC: H01L21/768 , H01L21/3213 , H01L21/311 , H01L25/04 , H01L25/16
Abstract: Systems and methods herein are related to the formation of optical devices including stacked optical element layers using silicon wafers, glass, or devices as substrates. The optical elements discussed herein can be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge-coupled devices (CCD), or complementary metal-oxide semiconductor (CMOS) image sensors, light-emitting diodes (LED), a micro-LED (uLED) display, organic light-emitting diode (OLED) or vertical-cavity surface-emitting laser (VCSELs). The optical elements can have interlayers formed in between optical element layers, where the interlayers can range in thickness from 1 nm to 3 mm.
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