公开(公告)号：US20220071023A1

公开(公告)日：2022-03-03

申请号：US17005954

申请日：2020-08-28

申请人： Applied Materials, Inc.

发明人： Tapash Chakraborty ,  Steven Verhaverbeke ,  Han-Wen Chen ,  Chintan Buch ,  Prerna Goradia ,  Giback Park ,  Kyuil Cho

IPC分类号： H05K3/38 ,  H05K3/00 ,  B32B7/12 ,  B32B15/08

摘要： Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

公开(公告)号：US10074559B1

公开(公告)日：2018-09-11

申请号：US15452394

申请日：2017-03-07

申请人： APPLIED MATERIALS, INC.

发明人： Geetika Bajaj ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Bhaskar Kumar ,  Deenesh Padhi

IPC分类号： H01L21/32 ,  H01L21/768

摘要： Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.

公开(公告)号：US10407789B2

公开(公告)日：2019-09-10

申请号：US15835067

申请日：2017-12-07

申请人： Applied Materials, Inc.

发明人： Balaji Ganapathy ,  Ankur Kadam ,  Prerna S. Goradia ,  Laksheswar Kalita ,  Tapash Chakraborty ,  Vijay Bhan Sharma

IPC分类号： C25D3/44 ,  C25D5/44 ,  C25D5/48 ,  C25D5/18 ,  C25D7/00 ,  C25D5/50 ,  C25D9/08 ,  C25D11/04 ,  C25D5/02

摘要： In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

公开(公告)号：US20150147879A1

公开(公告)日：2015-05-28

申请号：US14483578

申请日：2014-09-11

申请人： Applied Materials, Inc.

发明人： Amit Chatterjee ,  Geetika Bajaj ,  Pramit Manna ,  He Ren ,  Tapash Chakraborty ,  Srinivas D. Nemani ,  Mehul Naik ,  Robert Jan visser ,  Abhijit Basu Mallick

IPC分类号： H01L21/768

CPC分类号： H01L21/76834 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76838 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.

摘要翻译： 描述了在半导体电路的金属互连上沉积有效扩散阻挡层的薄的低介电常数层的方法。 每个具有头部和尾部的分子的自组装单层（SAM）沉积在金属上。 SAM分子自对准，其中头部部分被配制成选择性地键合到金属层，离开设置在分子远端的尾部。 随后在SAM上沉积介电层，化学键合到SAM分子的尾部。

公开(公告)号：US20220396732A1

公开(公告)日：2022-12-15

申请号：US17836578

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Nitin Deepak ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Visweswaren Sivaramakrishnan ,  Nilesh Chimanrao Bagul ,  Bahubali S. Upadhye

IPC分类号： C09K13/00

摘要： Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a β-diketone to form a volatile alkali metal β-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.

公开(公告)号：US20220162747A1

公开(公告)日：2022-05-26

申请号：US17529463

申请日：2021-11-18

申请人： Applied Materials, Inc.

发明人： Tapash Chakraborty ,  Nitin Deepak ,  Prerna Sonthalia Goradia ,  Bahubali S. Upadhye ,  Nilesh Chimanrao Bagul ,  Subramanya P. Herle ,  Visweswaren Sivaramakrishnan

IPC分类号： C23C16/44

摘要： Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.

公开(公告)号：US10326067B2

公开(公告)日：2019-06-18

申请号：US14852125

申请日：2015-09-11

申请人： APPLIED MATERIALS, INC.

发明人： Ranga Rao Arnepalli ,  Tapash Chakraborty ,  Robert Jan Visser

IPC分类号： C07F19/00 ,  H01L35/24 ,  C07F11/00 ,  H01L35/34

摘要： Single source precursors, methods to synthesize single source precursors and methods to deposit nanowire based thin films using single source precursors for high efficiency thermoelectric devices are provided herein. In some embodiments, a method of forming a single source precursor includes mixing a first compound with one of SbX3, SbX5, Sb2(SO4)3 or with one of BiX3, Bi(NO3)3, Bi(OTf)3, Bi(PO4), Bi(OAc)3, wherein the first compound is one of a lithium selenolate, a lithium tellurolate, a monoselenide, or a monotelluride.

公开(公告)号：US20180350604A1

公开(公告)日：2018-12-06

申请号：US15992656

申请日：2018-05-30

申请人： Applied Materials, Inc.

发明人： Robert Jan Visser ,  Prerna Goradia ,  Tapash Chakraborty ,  Ranga Rao Arnepalli ,  Darshan Thakare ,  Geetika Bajaj

IPC分类号： H01L21/288 ,  C23C16/448 ,  C23C16/06 ,  C23F1/00

摘要： Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.

公开(公告)号：US20180342388A1

公开(公告)日：2018-11-29

申请号：US15986178

申请日：2018-05-22

申请人： Applied Materials, Inc.

发明人： Tapash Chakraborty ,  Robert Jan Visser ,  Prerna Goradia

IPC分类号： H01L21/02 ,  B05D1/00

摘要： Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

公开(公告)号：US20170092533A1

公开(公告)日：2017-03-30

申请号：US14957380

申请日：2015-12-02

申请人： APPLIED MATERIALS, INC.

发明人： Tapash Chakraborty ,  Mark Saly ,  Rana Howlader ,  Eswaranand Venkatasubramanian ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  David Thompson

IPC分类号： H01L21/768 ,  H01L21/321 ,  H01L21/02

CPC分类号： H01L21/76802 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/0226 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883

摘要： Methods of selectively depositing a patterned layer on exposed dielectric material but not on exposed metal surfaces are described. A self-assembled monolayer (SAM) is deposited using phosphonic acids. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the exposed metal portion and the tail moiety extending away from the patterned substrate and reducing the deposition rate of the patterned layer above the exposed metal portion relative to the deposition rate of the patterned layer above the exposed dielectric portion. A dielectric layer is subsequently deposited by atomic layer deposition (ALD) which cannot initiate in regions covered with the SAM in embodiments.