Tantalum removal during chemical mechanical polishing
    2.
    发明申请
    Tantalum removal during chemical mechanical polishing 失效
    化学机械抛光过程中的钽去除

    公开(公告)号:US20020090820A1

    公开(公告)日:2002-07-11

    申请号:US09755717

    申请日:2001-01-05

    CPC classification number: H01L21/3212 C09G1/02

    Abstract: The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

    Abstract translation: 本发明一般涉及在化学机械抛光中选择性去除阻挡层的组合物和方法。 一方面,用于选择性除去阻挡层的组合物包括至少一种还原剂,来自至少一种过渡金属的离子和水。 该组合物还可以包括至少一种用于pH稳定的缓冲液,用于提供初始pH的至少一种pH调节剂,缓蚀剂,磨料颗粒和/或金属螯合剂。 在另一个实施方案中,本发明一般涉及在化学机械抛光中去除导电材料层和阻挡层的组合物和方法。 一方面,用于去除导电材料层和阻挡层的方法包括将导电材料层选择性组合物施加到抛光垫上,在导电材料层选择性组合物的存在下抛光衬底,施加 对抛光垫的阻挡层选择性组合物,并且在阻挡层选择性组合物的存在下研磨衬底。

    Process control in electro-chemical mechanical polishing
    3.
    发明申请
    Process control in electro-chemical mechanical polishing 审中-公开
    电化学机械抛光过程控制

    公开(公告)号:US20040182721A1

    公开(公告)日:2004-09-23

    申请号:US10391324

    申请日:2003-03-18

    Abstract: Method and apparatus for determining removal rate and polishing endpoint of electropolishing process. One embodiment provides a method for determining an amount of material removed from a substrate. The method includes electropolishing one or more conductive materials on a substrate, determining a total charge removed from the substrate during the course of polishing the substrate, and correlating the total charge removed to a thickness of material removed from the substrate.

    Abstract translation: 用于确定电解抛光过程的去除速率和抛光终点的方法和设备。 一个实施例提供了一种用于确定从基底去除的材料的量的方法。 该方法包括在衬底上电抛光一种或多种导电材料,在抛光衬底的过程中确定从衬底去除的总电荷,以及将去除的总电荷与从衬底去除的材料的厚度相关联。

    Method and composition for polishing a substrate
    4.
    发明申请
    Method and composition for polishing a substrate 失效
    抛光基材的方法和组合物

    公开(公告)号:US20040053499A1

    公开(公告)日:2004-03-18

    申请号:US10608404

    申请日:2003-06-26

    Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique. The electrochemical mechanical polishing technique may include a polishing composition comprising an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, and a solvent.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 在一个方面,提供了一种处理衬底以除去布置在形成于衬底中的窄特征定义之上的导电材料的方法,该导电材料以比通过电化学机械抛光技术在衬底中形成的宽特征定义上布置的导电材料更高的去除速率。 电化学机械抛光技术可以包括抛光组合物,其包含酸性电解质体系,一种或多种螯合剂,一种或多种腐蚀抑制剂,一种或多种无机或有机酸盐,一种或多种pH调节剂,以提供约 2和约10,和溶剂。

    Method and composition for polishing a substrate
    5.
    发明申请
    Method and composition for polishing a substrate 有权
    抛光基材的方法和组合物

    公开(公告)号:US20030234184A1

    公开(公告)日:2003-12-25

    申请号:US10456220

    申请日:2003-06-06

    Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer. The ECMP polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as copper, with a reduction in planarization type defects and yielding a desirable surface finish.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 一方面,组合物包括酸性电解质体系,一种或多种螯合剂,一种或多种腐蚀抑制剂,一种或多种无机或有机酸盐,一种或多种pH调节剂,以提供约2至约10 ,选自磨料颗粒,一种或多种氧化剂及其组合的研磨增强材料和溶剂。 该组合物可用于导电材料去除工艺中,包括在包括电极的处理设备中设置其上形成有导电材料层的衬底,在电极和衬底之间提供组合物,在电极和衬底之间施加偏压,以及 从导电材料层去除导电材料。 本文所述的ECMP抛光组合物和方法提高了材料从衬底表面(例如铜)的有效去除速率,同时平坦化型缺陷减少并产生理想的表面光洁度。

    ELECTRO-CHEMICAL PLATING WITH REDUCED THICKNESS AND INTEGRATION WITH CHEMICAL MECHANICAL POLISHER INTO A SINGLE PLATFORM
    6.
    发明申请
    ELECTRO-CHEMICAL PLATING WITH REDUCED THICKNESS AND INTEGRATION WITH CHEMICAL MECHANICAL POLISHER INTO A SINGLE PLATFORM 失效
    具有减小厚度的电化学镀层和与化学机械抛光机一体化成单个平台

    公开(公告)号:US20030121797A1

    公开(公告)日:2003-07-03

    申请号:US09770559

    申请日:2001-01-26

    Abstract: An apparatus is provided for depositing and polishing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a basin, a cover, a permeable disc, an anode and a polishing head. The permeable disc is disposed in the basin between the cover and the basin's bottom. The cover has an aperture disposed therein that includes a plurality of pins. The pins extend radially into the aperture and are adapted to support the substrate. The anode is disposed in the basin between the disc and the bottom of the basin. The polishing head is adapted to retain the substrate during processing and includes a retaining ring. The retaining ring has a plurality of grooves disposed therein that mate with the pins when the polishing head is disposed in the aperture. When the substrate is biased via the pins, the potential between the substrate and the anode causes material to be deposited on the substrate's surface.

    Abstract translation: 提供了一种用于在衬底上沉积和抛光材料层的装置。 在一个实施例中,提供了一种装置,其包括盆,盖,可渗透盘,阳极和抛光头。 可渗透盘设置在盖和盆底之间的盆中。 盖具有设置在其中的孔,其包括多个销。 销钉径向延伸到孔中并且适于支撑基底。 阳极设置在圆盘和盆底之间的盆中。 抛光头适于在加工过程中保持基底并且包括保持环。 保持环具有设置在其中的多个槽,当抛光头设置在孔中时与该销相配合。 当衬底经由引脚偏置时,衬底和阳极之间的电势使材料沉积在衬底的表面上。

    Method and composition for polishing a substrate
    7.
    发明申请
    Method and composition for polishing a substrate 有权
    抛光基材的方法和组合物

    公开(公告)号:US20030178320A1

    公开(公告)日:2003-09-25

    申请号:US10378097

    申请日:2003-02-26

    Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 3 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer.

    Abstract translation: 提供了抛光组合物和从衬底表面去除导电材料的方法。 一方面,组合物包括酸性电解质体系,一种或多种螯合剂,一种或多种腐蚀抑制剂,一种或多种无机或有机酸盐,一种或多种pH调节剂,以提供约3至约10的pH ,选自磨料颗粒,一种或多种氧化剂及其组合的研磨增强材料和溶剂。 该组合物可用于导电材料去除工艺中,包括在包括电极的处理设备中设置其上形成有导电材料层的衬底,在电极和衬底之间提供组合物,在电极和衬底之间施加偏压,以及 从导电材料层去除导电材料。

    Method and apparatus for enhanced CMP using metals having reductive properties
    10.
    发明申请
    Method and apparatus for enhanced CMP using metals having reductive properties 失效
    使用具有还原性的金属进行增强CMP的方法和装置

    公开(公告)号:US20020098779A1

    公开(公告)日:2002-07-25

    申请号:US10093897

    申请日:2002-03-08

    CPC classification number: B24B37/26 B24B53/017 H01L21/3212

    Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

    Abstract translation: 通过引入平衡电化学力的材料来减少化学机械抛光(CMP)的磨损。 在本发明的第一实施例中,在抛光工艺中使用在抛光垫表面上的凹槽中具有铜材料的抛光垫以减少凹陷。 在本发明的第二实施例中,抛光垫具有带有铜填充物的穿孔。 在本发明的第三实施例中,抛光头上的铜保持环将铜材料引入CMP工艺以减少凹陷。 在本发明的第四实施例中,在抛光装置中使用铜的调节板。 在本发明的第五实施例中,附加的铜特征被放置在待抛光的基板上。 抛光附加功能通过抛光过程稳定地引入铜。 在本发明的第六个实施方案中,将铜化合物加入到抛光浆料中。

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