公开(公告)号：US5311020A

公开(公告)日：1994-05-10

申请号：US971502

申请日：1992-11-04

申请人： Arnold H. Silver ,  Hugo W. Chan ,  Bruce J. Dalrymple ,  Szutsun S. Ou ,  Eugene L. Dines ,  Susanne L. Thomasson

发明人： Arnold H. Silver ,  Hugo W. Chan ,  Bruce J. Dalrymple ,  Szutsun S. Ou ,  Eugene L. Dines ,  Susanne L. Thomasson

IPC分类号： H01L27/146 ,  H01L31/09 ,  H03F19/00 ,  H01L39/22 ,  H01L31/00

CPC分类号： H01L27/18 ,  H01L27/146 ,  H01L27/14649 ,  H01L31/09 ,  H03F19/00

摘要： A monolithically-integrated semiconductor/ superconductor infrared detector and readout circuit providing sensitive, low-noise detection of infrared radiation for high-performance focal plane array applications. The infrared detector and readout circuit includes a semiconductor infrared detector and a semiconductor/superconductor transimpedance readout amplifier fabricated directly on the infrared detector using thin-film, integrated-circuit processing techniques. A superconducting analog-to-digital (A/D) converter digitizes the detector signals in the cryogenically cooled environment of the detector before coupling the signals to the much warmer and electromagnetically noisier environment of the back-end signal processing electronics, thus reducing noise contamination.

摘要翻译： 单片集成半导体/超导体红外检测器和读出电路，为高性能焦平面阵列应用提供灵敏，低噪声的红外辐射检测。 红外检测器和读出电路包括半导体红外检测器和半导体/超导体跨阻读出放大器，其直接使用薄膜集成电路处理技术在红外检测器上制造。 超导模数（A / D）转换器将检测器的低温冷却环境中的检测器信号数字化，然后将信号耦合到后端信号处理电子设备的更温暖和电磁噪声环境中，从而减少噪声污染 。

公开(公告)号：US4896195A

公开(公告)日：1990-01-23

申请号：US168067

申请日：1988-03-14

申请人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

发明人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

IPC分类号： H01L33/00

CPC分类号： H01L33/0045

摘要： A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.

摘要翻译： 一种半导体二极管结构，包括光吸收衬底，有源区和围绕有源区的一对覆层。 激光通过倾斜端面被抑制，该倾斜端面将光线向下反射到衬底中，在其被吸收的位置，仅提供通过有源区域的自发发射的光的一次通过。 一个公开的实施例具有用于边缘发射光的外耦合的常规端面。 另一个实施例包括形成在与倾斜面相邻的衬底的开口中的表面发射小面。 又一实施例具有两个倾斜面。 一个倾斜小面可以用于将光反射到吸收衬底中，或者两者可以用于通过单独的表面发射面反射光。

公开(公告)号：US5298762A

公开(公告)日：1994-03-29

申请号：US982009

申请日：1992-09-28

申请人： Szutsun S. Ou

发明人： Szutsun S. Ou

IPC分类号： H01L29/06 ,  H01L29/74 ,  H01S5/00 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01L27/14

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/105 ,  H01S5/06203 ,  H01S5/34 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3095 ,  H01S5/3211 ,  H01S5/3432 ,  Y10S257/919

摘要： A semiconductor-insulator-semiconductor (SIS) structure diode device for providing fast optoelectronic switching with stimulated emission. The device includes a substrate which has a buffer layer disposed on top thereof. An n-type cladding layer is disposed on top of the buffer layer. An undoped i-region is disposed on top of the buffer layer. The i-region includes at least one quantum well disposed between two waveguide layers. A lightly doped p-type cladding layer is disposed on top of the i-region. A contact layer is further disposed on top of the p-type cladding layer. First and second contact terminals are included for providing a two-terminal device. The diode advantageously provides good lasing performance, significant negative differential resistance and strong light sensitivity. In an alternate embodiment, a third terminal is connected to the undoped i-region to thereby form a three terminal device.

摘要翻译： 半导体 - 绝缘体半导体（SIS）结构二极管器件，用于提供具有受激发射的快速光电开关。 该装置包括具有设置在其顶部上的缓冲层的基板。 n型包层设置在缓冲层的顶部。 未掺杂的i区域设置在缓冲层的顶部。 i区域包括设置在两个波导层之间的至少一个量子阱。 轻掺杂的p型覆层设置在i区的顶部。 接触层还设置在p型覆层的顶部。 包括第一和第二接触端子用于提供两端装置。 二极管有利地提供良好的激光性能，显着的负差分电阻和强光敏感性。 在替代实施例中，第三端子连接到未掺杂的i区域，从而形成三端子器件。

公开(公告)号：US5025451A

公开(公告)日：1991-06-18

申请号：US424424

申请日：1989-10-20

申请人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

发明人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

IPC分类号： G02B6/42 ,  H01S5/18 ,  H01S5/40 ,  H01S5/42

CPC分类号： H01S5/18 ,  G02B6/4249 ,  H01S5/42 ,  H01S5/4006 ,  H01S5/4031 ,  H01S5/4068 ,  H01S5/4075

摘要： A two-dimensional integrated laser array having a plurality of surface-emitting laser arrays and a plurality of waveguides for optically coupling the individual laser arrays together. Each surface-emitting laser array includes a plurality of injection lasers which are evanescently coupled together in order to emit a single beam of light. The coupling provided by the waveguides causes the surface-emitting laser arrays to operate in phase and at the same wavelength as an external master oscillator. Therefore, the surface-emitting laser arrays generate coherent beams of light, which are combined and focused by a micro-lens. The output of the micro-lens is a single, coherent high-power optical beam which is emitted perpendicular to the two-dimensional integrated laser array.

摘要翻译： 具有多个表面发射激光器阵列和用于将各个激光器阵列光学耦合在一起的多个波导的二维集成激光器阵列。 每个表面发射激光器阵列包括多个注入激光器，其消逝地耦合在一起以发射单个光束。 由波导提供的耦合导致表面发射激光器阵列以与外部主振荡器相同的波长工作。 因此，表面发射激光器阵列产生相干的光束，其由微透镜组合和聚焦。 微透镜的输出是垂直于二维集成激光器阵列发射的单一相干高功率光束。

公开(公告)号：US6057563A

公开(公告)日：2000-05-02

申请号：US102823

申请日：1998-06-23

申请人： Hsi-Ming Chen ,  Szutsun S. Ou

发明人： Hsi-Ming Chen ,  Szutsun S. Ou

IPC分类号： H01L33/02 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/30 ,  H01L33/02

摘要： Disclosed is a light transparent window layer for light transmitting diodes. The light transparent window layer is formed by growing a plurality of AlGaInP superlattice layers such that the uniformity of current distribution within LED chip can be enhanced, and the size of light-emitting area can be increased. The manufacturing process is also simplified.

摘要翻译： 公开了一种用于透光二极管的透光窗口层。 通过生长多个AlGaInP超晶格层来形成透光窗层，使得能够提高LED芯片内的电流分布的均匀性，并且可以增加发光面积的尺寸。 制造过程也简化了。

公开(公告)号：US5253263A

公开(公告)日：1993-10-12

申请号：US850083

申请日：1992-03-12

申请人： Michael Jansen ,  Jane J. Yang ,  Szutsun S. Ou ,  Thomas J. Roth

发明人： Michael Jansen ,  Jane J. Yang ,  Szutsun S. Ou ,  Thomas J. Roth

IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/18 ,  H01S3/19

CPC分类号： H01S5/18 ,  H01S5/005 ,  H01S5/0203 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/0267 ,  H01S5/1085 ,  H01S5/2027

摘要： A surface-emitting semiconductor injection laser for use in fabricating high-power two-dimensional monolithic laser arrays. The surface-emitting semiconductor laser includes a substrate and an active layer and a pair of cladding layers formed on the substrate. A folded resonator cavity is formed by highly-reflective 45.degree. and 90.degree. micromirrors that are etched at either end of the active layer and by a partially-reflective reflector that is positioned between the 45.degree. micromirror and the substrate for outcoupling the laser light from the resonator cavity. The semiconductor laser is mounted junction down on a heat sink to position the active layer close to the heat sink for good heat dissipation at high power levels. In one preferred embodiment of the present invention, the substrate is optically opaque and an opening is etched in the substrate for outcoupling the laser light. In another preferred embodiment of the invention, the substrate is optically transparent and a microlens is formed on the substrate to collimate the laser light.

摘要翻译： 一种用于制造大功率二维单片激光器阵列的表面发射半导体注入激光器。 表面发射半导体激光器包括衬底和形成在衬底上的有源层和一对覆层。 折叠的谐振腔由高反射的45°和90°的微反射镜形成，这些反射镜在有源层的两端蚀刻，部分反射的反射镜位于45°微镜和衬底之间，用于将激光 谐振腔。 将半导体激光器安装在散热片上，将活性层定位在靠近散热片的位置，以便在高功率水平下实现良好的散热。 在本发明的一个优选实施例中，衬底是光学不透明的，并且在衬底中蚀刻开口用于输出激光。 在本发明的另一个优选实施例中，衬底是光学透明的，并且在衬底上形成微透镜以准直激光。