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公开(公告)号：US20080044964A1
公开(公告)日：2008-02-21
申请号：US11888949
申请日：2007-08-03
IPC分类号： H01L21/00 , H01L21/311
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US20080042212A1
公开(公告)日：2008-02-21
申请号：US11888942
申请日：2007-08-03
IPC分类号： H01L27/092
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译： 一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜， 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。
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3.发明申请METHODS OF FORMING A DOPED SEMICONDUCTOR THIN FILM, DOPED SEMICONDUCTOR THIN FILM STRUCTURES, DOPED SILANE COMPOSITIONS, AND METHODS OF MAKING SUCH COMPOSITIONS 审中-公开形成二极管半导体薄膜的方法，掺杂的半导体薄膜结构，掺杂的硅烷组合物和制备这些组合物的方法公开(公告)号：US20080022897A1
公开(公告)日：2008-01-31
申请号：US11868927
申请日：2007-10-08
申请人： Fabio Zurcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir Dioumaev , Brent Ridley , Klaus Kunze , James Cleeves
发明人： Fabio Zurcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir Dioumaev , Brent Ridley , Klaus Kunze , James Cleeves
IPC分类号： C09D1/00
CPC分类号： H01L21/02576 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628
摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。
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公开(公告)号：US20070287237A1
公开(公告)日：2007-12-13
申请号：US11818078
申请日：2007-06-12
申请人： Joerg Rockenberger , James Cleeves , Arvind Kamath
发明人： Joerg Rockenberger , James Cleeves , Arvind Kamath
CPC分类号： H01L29/7866 , B82Y10/00 , H01L27/1248 , H01L27/1292 , H01L29/458 , H01L29/4908 , H01L29/66757 , H01L29/78681 , H01L29/7869
摘要： A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.
摘要翻译： 一种自对准顶栅薄膜晶体管（TFT）和通过形成半导体薄膜层形成这种薄膜晶体管的方法; 在其上印刷掺杂的玻璃图案，所述掺杂玻璃图案中的间隙限定所述TFT的沟道区域; 在沟道区域上或上方形成栅电极，栅电极在其上包括栅介质膜和栅极导体; 并且将掺杂剂从掺杂的玻璃图案扩散到半导体薄膜层中。
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公开(公告)号：US20100244133A1
公开(公告)日：2010-09-30
申请号：US12797274
申请日：2010-06-09
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US07701011B2
公开(公告)日：2010-04-20
申请号：US11888942
申请日：2007-08-03
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译： 一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜， 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。
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公开(公告)号：US20140094004A1
公开(公告)日：2014-04-03
申请号：US13633816
申请日：2012-10-02
IPC分类号： H01L21/336
CPC分类号： H01L27/1292 , H01L29/66757
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US08304780B2
公开(公告)日：2012-11-06
申请号：US12797274
申请日：2010-06-09
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US07767520B2
公开(公告)日：2010-08-03
申请号：US11888949
申请日：2007-08-03
IPC分类号： H01L21/8242
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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10.发明申请Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom 审中-公开用于形成半导体和/或含硅膜的组合物和方法，以及由此形成的结构公开(公告)号：US20110104877A1
公开(公告)日：2011-05-05
申请号：US12984535
申请日：2011-01-04
申请人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
发明人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
CPC分类号： C23C18/14 , C09D11/52 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1275 , H01L21/02532 , H01L21/02601 , H01L21/02636 , H01L29/66757 , Y10T428/24802 , Y10T428/24926 , Y10T428/31663
摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。
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