公开(公告)号：US20050287747A1

公开(公告)日：2005-12-29

申请号：US10710245

申请日：2004-06-29

申请人： Ashima Chakravarti ,  Judson Holt ,  Kevin Chan ,  Sadanand Deshpande ,  Rangarajan Jagannathan

发明人： Ashima Chakravarti ,  Judson Holt ,  Kevin Chan ,  Sadanand Deshpande ,  Rangarajan Jagannathan

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/768 ,  H01L29/786

CPC分类号： H01L29/7843 ,  C23C16/308 ,  C23C16/34 ,  C23C16/401 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L29/7833 ,  H01L29/78675

摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。

公开(公告)号：US20080054228A1

公开(公告)日：2008-03-06

申请号：US11924825

申请日：2007-10-26

申请人： Ashima Chakravarti ,  Judson Holt ,  Kevin Chan ,  Sadanand Deshpande ,  Rangarajan Jagannathan

发明人： Ashima Chakravarti ,  Judson Holt ,  Kevin Chan ,  Sadanand Deshpande ,  Rangarajan Jagannathan

IPC分类号： H01L21/31 ,  H01B1/00

CPC分类号： H01L29/7843 ,  C23C16/308 ,  C23C16/34 ,  C23C16/401 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L29/7833 ,  H01L29/78675

摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。

公开(公告)号：US20060138566A1

公开(公告)日：2006-06-29

申请号：US11349233

申请日：2006-02-08

申请人： Ashima Chakravarti ,  Judson Holt ,  Kevin Chan ,  Sadanand Deshpande ,  Rangarajan Jagannathan

发明人： Ashima Chakravarti ,  Judson Holt ,  Kevin Chan ,  Sadanand Deshpande ,  Rangarajan Jagannathan

IPC分类号： H01L29/76 ,  H01L21/302

CPC分类号： H01L29/7843 ,  C23C16/308 ,  C23C16/34 ,  C23C16/401 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L29/7833 ,  H01L29/78675

摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。

公开(公告)号：US20060237846A1

公开(公告)日：2006-10-26

申请号：US11428648

申请日：2006-07-05

申请人： Ashima Chakravarti ,  Shawn Smith ,  Dominic Schepis ,  Rangarajan Jagannathan ,  Anita Madan

发明人： Ashima Chakravarti ,  Shawn Smith ,  Dominic Schepis ,  Rangarajan Jagannathan ,  Anita Madan

IPC分类号： H01L23/52

CPC分类号： H01L29/7843 ,  C23C16/308 ,  C23C16/34 ,  C23C16/401 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L29/7833 ,  H01L29/78675

摘要： When forming a silicon nitride film from a nitrogen precursor, using a silicon precursor combination rather than a single silane precursor advantageously increases the deposition rate. For example, adding silane during formation of a silicon nitride film made using BTBAS and ammonia improves (increases) the deposition rate while still yielding a film with a favorably high stress.

摘要翻译： 当从氮前体形成氮化硅膜时，使用硅前体组合而不是单一硅烷前体有利地增加了沉积速率。 例如，在使用BTBAS和氨制备的氮化硅膜形成期间添加硅烷改善（增加）沉积速率，同时仍然产生具有有利的高应力的膜。

公开(公告)号：US07361611B2

公开(公告)日：2008-04-22

申请号：US11349233

申请日：2006-02-08

申请人： Ashima B. Chakravarti ,  Judson Holt ,  Kevin K. Chan ,  Sadanand V. Deshpande ,  Rangarajan Jagannathan

发明人： Ashima B. Chakravarti ,  Judson Holt ,  Kevin K. Chan ,  Sadanand V. Deshpande ,  Rangarajan Jagannathan

IPC分类号： H01L21/31

CPC分类号： H01L29/7843 ,  C23C16/308 ,  C23C16/34 ,  C23C16/401 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L29/7833 ,  H01L29/78675

摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。

公开(公告)号：US07595010B2

公开(公告)日：2009-09-29

申请号：US11924825

申请日：2007-10-26

申请人： Ashima B. Chakravarti ,  Judson Holt ,  Kevin K. Chan ,  Sadanand V. Deshpande ,  Rangarajan Jagannathan

发明人： Ashima B. Chakravarti ,  Judson Holt ,  Kevin K. Chan ,  Sadanand V. Deshpande ,  Rangarajan Jagannathan

IPC分类号： H01B1/00

CPC分类号： H01L29/7843 ,  C23C16/308 ,  C23C16/34 ,  C23C16/401 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L29/7833 ,  H01L29/78675

摘要： Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.

摘要翻译： 在形成氮化硅，氧化硅，氮氧化硅或碳化硅膜期间添加至少一种非硅前体（例如锗前体，碳前体等）改善了沉积速率和/或使得可以调谐性能 的电影，如调整电影的压力。 此外，在掺杂的氧化硅或掺杂氮化硅或其它掺杂结构中，掺杂剂的存在可用于测量与掺杂剂相关的信号，作为蚀刻停止或用于在蚀刻期间实现控制。

公开(公告)号：US20080093629A1

公开(公告)日：2008-04-24

申请号：US11955591

申请日：2007-12-13

申请人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

发明人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

IPC分类号： H01L29/778

CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

公开(公告)号：US07384835B2

公开(公告)日：2008-06-10

申请号：US11420318

申请日：2006-05-25

申请人： Huajie Chen ,  Judson R Holt ,  Rangarajan Jagannathan ,  Wesley C Natzle ,  Michael R Sievers ,  Richard S Wise

发明人： Huajie Chen ,  Judson R Holt ,  Rangarajan Jagannathan ,  Wesley C Natzle ,  Michael R Sievers ,  Richard S Wise

IPC分类号： H01L21/335

CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

公开(公告)号：US06200891B1

公开(公告)日：2001-03-13

申请号：US09133537

申请日：1998-08-13

申请人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

发明人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

IPC分类号： H01L214763

CPC分类号： H01L21/31111

摘要： Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.

摘要翻译： 可以使用含有含氟化合物和有机溶剂的液体组合物来除去在层间电介质中常用的那些氧化物。 优选的组合物基本上是非水的并且包括酸酐。 改进的选择性去除氧化物的方法，特别是用于去除其中预暴露（或含导电金属）特征的氧化硅，其中金属（导电金属 - 接枝）特征将通过所需的氧化物去除而暴露，或其中 另外提供了氧化锡氧化物接触金属（或含导电金属）特征。

公开(公告)号：US5635253A

公开(公告)日：1997-06-03

申请号：US487808

申请日：1995-06-07

申请人： Donald F. Canaperi ,  Rangarajan Jagannathan ,  Mahadevaiyer Krishnan

发明人： Donald F. Canaperi ,  Rangarajan Jagannathan ,  Mahadevaiyer Krishnan

IPC分类号： C23C18/31 ,  C23C18/16 ,  C23C18/44 ,  B32B17/10

CPC分类号： C23C18/1617

摘要： A replenishing solution for a cyanide-based electroless gold plating bath. The solution includes a gold(III) halide such as gold chloride, gold bromide, tetrachloroaurate (and its sodium, potassium, and ammonium salts), and tetrabromoaurate (and its sodium, potassium, and ammonium salts). The replenishing solution also may include an alkali (such as potassium hydroxide, sodium hydroxide, and ammonium hydroxide) to maintain the pH of the solution between 8 and 14. Also provided is a method of replenishing a cyanide-based electroless gold plating bath with the solution of the present invention.

摘要翻译： 一种基于氰化物的无电镀金液的补充溶液。 该溶液包括金（III）卤化物如氯化金，溴化金，四氯牛磺酸盐（及其钠盐，钾盐和铵盐）和四溴乙酸盐（及其钠盐，钾盐和铵盐）。 补充溶液还可以包括碱（例如氢氧化钾，氢氧化钠和氢氧化铵），以保持溶液的pH在8和14之间。还提供了一种补充基于氰化物的无电镀金浴的方法， 本发明的溶液。