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    METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO AND A METHOD OF FORMING THE TRANSISTOR
    1.
    发明申请
    METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO AND A METHOD OF FORMING THE TRANSISTOR 有权
    具有夏普HALO的金属氧化物场效应晶体管和形成晶体管的方法

    公开(公告)号：US20070275510A1

    公开(公告)日：2007-11-29

    申请号：US11420318

    申请日：2006-05-25

    申请人： Huajie Chen ,  Judson R. Holt ,  Rangarajan Jagannathan ,  Wesley C. Natzle ,  Michael R. Sievers ,  Richard S. Wise

    发明人： Huajie Chen ,  Judson R. Holt ,  Rangarajan Jagannathan ,  Wesley C. Natzle ,  Michael R. Sievers ,  Richard S. Wise

    IPC分类号： H01L21/8232 ,  H01L21/8234 ,  H01L21/335

    CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

    摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

    摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

    Metal oxide field effect transistor with a sharp halo and a method of forming the transistor
    2.
    发明授权
    Metal oxide field effect transistor with a sharp halo and a method of forming the transistor 有权
    具有尖锐光晕的金属氧化物场效应晶体管和形成晶体管的方法

    公开(公告)号：US07384835B2

    公开(公告)日：2008-06-10

    申请号：US11420318

    申请日：2006-05-25

    申请人： Huajie Chen ,  Judson R Holt ,  Rangarajan Jagannathan ,  Wesley C Natzle ,  Michael R Sievers ,  Richard S Wise

    发明人： Huajie Chen ,  Judson R Holt ,  Rangarajan Jagannathan ,  Wesley C Natzle ,  Michael R Sievers ,  Richard S Wise

    IPC分类号： H01L21/335

    CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

    摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

    摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

    Metal oxide field effect transistor with a sharp halo
    3.
    发明授权
    Metal oxide field effect transistor with a sharp halo 有权
    金属氧化物场效应晶体管具有尖锐的光晕

    公开(公告)号：US07859013B2

    公开(公告)日：2010-12-28

    申请号：US11955591

    申请日：2007-12-13

    申请人： Huajie Chen ,  Judson R. Holt ,  Rangarajan Jagannathan ,  Wesley C. Natzle ,  Michael R. Sievers ,  Richard S. Wise

    发明人： Huajie Chen ,  Judson R. Holt ,  Rangarajan Jagannathan ,  Wesley C. Natzle ,  Michael R. Sievers ,  Richard S. Wise

    IPC分类号： H01L21/02

    CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

    摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

    摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

    METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO
    4.
    发明申请
    METAL OXIDE FIELD EFFECT TRANSISTOR WITH A SHARP HALO 有权
    具有夏普HALO的金属氧化物场效应晶体管

    公开(公告)号：US20080093629A1

    公开(公告)日：2008-04-24

    申请号：US11955591

    申请日：2007-12-13

    申请人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

    发明人： Huajie Chen ,  Judson Holt ,  Rangarajan Jagannathan ,  Wesley Natzle ,  Michael Sievers ,  Richard Wise

    IPC分类号： H01L29/778

    CPC分类号： H01L29/66636 ,  H01L29/6659 ,  H01L29/7833

    摘要： Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.

    摘要翻译： 公开了具有限定的限定的卤素的MOSFET的实施例，其限定的源极/漏极扩展部分以及形成MOSFET的方法。 蚀刻半导体层以形成切割栅极介电层的凹部。 低能量植入物形成晕轮。 然后，执行COR预清洁，并且通过外延沉积填充凹部。 外延可以被原位掺杂或随后植入以形成源/漏扩展。 或者，蚀刻之后紧接着是COR预清洁，随后进行外延沉积以填充凹部。 在外延沉积工艺期间，沉积的材料被掺杂以形成原位掺杂的光晕，然后切换掺杂剂以形成邻近光晕的原位掺杂的源极/漏极延伸。 或者，在形成原位掺杂的光晕之后，进行沉积工艺而没有掺杂剂，并且使用注入来形成源极/漏极延伸部。

    Removal of dielectric oxides
    5.
    发明授权
    Removal of dielectric oxides 失效
    去除介电氧化物

    公开(公告)号：US06200891B1

    公开(公告)日：2001-03-13

    申请号：US09133537

    申请日：1998-08-13

    申请人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

    发明人： Rangarajan Jagannathan ,  Karen P. Madden ,  Kenneth J. McCullough ,  Harald F. Okorn-Schmidt ,  Keith R. Pope ,  David L. Rath

    IPC分类号： H01L214763

    CPC分类号： H01L21/31111

    摘要： Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.

    摘要翻译： 可以使用含有含氟化合物和有机溶剂的液体组合物来除去在层间电介质中常用的那些氧化物。 优选的组合物基本上是非水的并且包括酸酐。 改进的选择性去除氧化物的方法，特别是用于去除其中预暴露（或含导电金属）特征的氧化硅，其中金属（导电金属 - 接枝）特征将通过所需的氧化物去除而暴露，或其中 另外提供了氧化锡氧化物接触金属（或含导电金属）特征。

    Method of replenishing electroless gold plating baths
    6.
    发明授权
    Method of replenishing electroless gold plating baths 失效
    补充无电镀金液的方法

    公开(公告)号：US5635253A

    公开(公告)日：1997-06-03

    申请号：US487808

    申请日：1995-06-07

    申请人： Donald F. Canaperi ,  Rangarajan Jagannathan ,  Mahadevaiyer Krishnan

    发明人： Donald F. Canaperi ,  Rangarajan Jagannathan ,  Mahadevaiyer Krishnan

    IPC分类号： C23C18/31 ,  C23C18/16 ,  C23C18/44 ,  B32B17/10

    CPC分类号： C23C18/1617

    摘要： A replenishing solution for a cyanide-based electroless gold plating bath. The solution includes a gold(III) halide such as gold chloride, gold bromide, tetrachloroaurate (and its sodium, potassium, and ammonium salts), and tetrabromoaurate (and its sodium, potassium, and ammonium salts). The replenishing solution also may include an alkali (such as potassium hydroxide, sodium hydroxide, and ammonium hydroxide) to maintain the pH of the solution between 8 and 14. Also provided is a method of replenishing a cyanide-based electroless gold plating bath with the solution of the present invention.

    摘要翻译： 一种基于氰化物的无电镀金液的补充溶液。 该溶液包括金（III）卤化物如氯化金，溴化金，四氯牛磺酸盐（及其钠盐，钾盐和铵盐）和四溴乙酸盐（及其钠盐，钾盐和铵盐）。 补充溶液还可以包括碱（例如氢氧化钾，氢氧化钠和氢氧化铵），以保持溶液的pH在8和14之间。还提供了一种补充基于氰化物的无电镀金浴的方法， 本发明的溶液。

    Tetra aza ligand systems as complexing agents for electroless deposition of copper
    7.
    发明授权
    Tetra aza ligand systems as complexing agents for electroless deposition of copper 失效
    四氮杂配体体系作为铜无电沉积的络合剂

    公开(公告)号：US5102456A

    公开(公告)日：1992-04-07

    申请号：US618769

    申请日：1990-11-27

    申请人： Rangarajan Jagannathan ,  Randolph F. Knarr ,  Mahadevaiyer Krishnan ,  Gregory P. Wandy

    发明人： Rangarajan Jagannathan ,  Randolph F. Knarr ,  Mahadevaiyer Krishnan ,  Gregory P. Wandy

    IPC分类号： C23C18/40

    CPC分类号： C23C18/40 ,  Y10T428/12694 ,  Y10T428/12903 ,  Y10T428/31681

    摘要： An electroless copper plating bath uses a series of tetradentate nitrogen ligands. The components of the bath may be substituted without extensive re-optimization of the bath. The Cu-tetra-aza ligand baths operates over a pH range between 7 and 12. Stable bath formulations employing various buffers, reducing agents and ligands have been developed. The process can be used for metal deposition at lower pH and provides the capability to use additive processing for metallization in the presence of polyimide, positive photoresist and other alkali sensitive substrates.

    摘要翻译： 化学镀铜浴使用一系列四齿氮配体。 浴的组分可以被代替而没有大量重新优化浴。 Cu-四氮杂配体浴在7和12之间的pH范围内运行。已经开发了使用各种缓冲液，还原剂和配体的稳定浴配方。 该方法可用于较低pH下的金属沉积，并提供在聚酰亚胺，正性光致抗蚀剂和其他碱敏感基材存在下使用添加剂处理进行金属化的能力。