公开(公告)号：US20230227313A1

公开(公告)日：2023-07-20

申请号：US17756895

申请日：2020-12-04

申请人： Atom H2O, LLC

发明人： Huaping Li

IPC分类号： C01B32/162 ,  C01B32/159 ,  B82Y40/00 ,  B01J19/00

CPC分类号： C01B32/162 ,  C01B32/159 ,  B82Y40/00 ,  B01J19/0013 ,  C01B2202/02 ,  B01J2219/00121

摘要： Disclosed herein is an apparatus and method for fabrication of large diameter single-walled carbon nanotube films. Advantageously, large diameter single-walled carbon nanotube films may be useful as transparent electrodes with high transparency and lower sheet resistance. In one embodiment, the method includes supplying carrier carbon monoxide and catalyst precursor through a first inlet at a temperature below the reaction temperature of the catalyst precursor; supplying heated carbon monoxide through a second inlet such that the heated carbon monoxide mixes with the carrier carbon monoxide and the catalyst an aerosol; reacting the aerosol in a reaction chamber to form a composite aerosol of single walled carbon nanotubes, metal nanoparticles, carbon monoxide, and carbon dioxide. In this embodiment, the heated carbon monoxide heats the catalyst precursor which reacts with the carbon monoxide to form carbon nanotubes.

公开(公告)号：US10978640B2

公开(公告)日：2021-04-13

申请号：US16678491

申请日：2019-11-08

申请人： Atom H2O, LLC

发明人： Huaping Li

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L27/28 ,  H01L27/32

摘要： Methods for producing and integrating single-walled carbon nanotubes (SWCNT) into existing TFT backplane manufacturing lines are provided. In contrast to LTPS and oxide TFT backplanes, SWCNT TFT backplanes exhibit either equivalent or better figures of merit such as high field emission mobility, low temperature fabrication, good stability, uniformity, scalability, flexibility, transparency, mechanical deformability, low voltage and low power, bendability and low cost. Methods and processes for integrating SWCNTs technologies into existing TFT backplane manufacturing lines, pilot test and mass production can start without additional capex needs are also provided.

公开(公告)号：US11785791B2

公开(公告)日：2023-10-10

申请号：US17102344

申请日：2020-11-23

申请人： Atom H2O, LLC

发明人： Huaping Li

IPC分类号： H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H10K50/30 ,  H10K10/84 ,  H10K10/46 ,  H10K50/11 ,  H10K50/81 ,  H10K50/82 ,  H10K50/17 ,  H10K71/00 ,  H10K85/20 ,  C09K11/06

CPC分类号： H10K50/30 ,  H10K10/472 ,  H10K10/84 ,  H10K50/11 ,  H10K50/171 ,  H10K50/81 ,  H10K50/82 ,  H10K71/00 ,  H10K85/20 ,  C09K11/06 ,  H10K10/491

摘要： Devices, structures, materials and methods for carbon enabled vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Carbon electrodes (such as from graphene) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, carbon electrodes and relevant substrates and gates are utilized to construct LETs, including heterojunction VOLETs.

公开(公告)号：US10957868B2

公开(公告)日：2021-03-23

申请号：US15780949

申请日：2016-12-01

申请人： Atom H2O, LLC

发明人： Xinning Luan ,  Jiang Liu ,  Huaping Li

IPC分类号： H01L29/08 ,  H01L31/0232 ,  H01L51/40 ,  H01L51/05 ,  H01L51/52 ,  G09F9/33 ,  G09F9/30 ,  H01L29/732 ,  H01L29/78 ,  H01L25/16 ,  H01L27/32 ,  H01L51/00 ,  H01L51/10

摘要： Gated organic light-emitting diodes or vertical light emitting transistors are disclosed based on the modulation of charge carrier injection from electrodes into light-emitting materials by applying external gate potential. This gate modulation were achieved in two disclosed methods: 1) a porous electrode allowing mobile ions to stabilize electrochemically doped semiconducting materials that can form ohmic contact with electrodes: 2) an electrode with gate-tunable work function such as Al:LiF composite electrodes.

公开(公告)号：US11177465B2

公开(公告)日：2021-11-16

申请号：US16664651

申请日：2019-10-25

申请人： Atom H2O, LLC

发明人： Huaping Li

IPC分类号： H01L33/00 ,  H01L51/52 ,  H01L51/56 ,  H01L51/05 ,  H01L27/15 ,  H01L27/32 ,  H01L33/06 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01L33/52 ,  H01L51/00 ,  H01L33/08

摘要： Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.

公开(公告)号：US20230347302A1

公开(公告)日：2023-11-02

申请号：US17997880

申请日：2021-05-03

申请人： Atom H2O, LLC

发明人： Huaping Li

IPC分类号： B01D69/14 ,  B01D71/02 ,  B01D71/56 ,  B01D71/64 ,  B01D69/12 ,  B01D69/10 ,  B01D69/02 ,  B01D67/00 ,  B01D63/10 ,  B01D61/02 ,  C02F1/44

CPC分类号： B01D69/148 ,  B01D71/0212 ,  B01D71/56 ,  B01D71/64 ,  B01D69/14111 ,  B01D69/1216 ,  B01D69/107 ,  B01D69/02 ,  B01D67/00793 ,  B01D63/101 ,  B01D61/025 ,  C02F1/441 ,  B01D2325/20 ,  B01D2323/216 ,  C02F2305/08 ,  C02F2103/10

摘要： The present disclosure relates to carbon nanotube based desalination membranes and methods of manufacturing thereof. The carbon nanotube based desalination membranes may be manufactured by: providing a polymer matrix; providing carbon nanotubes directly contacting the polymer matrix; stirring the carbon nanotubes into the polymer matrix in order to make a carbon nanotube composite solution; and coating a substrate with the carbon nanotube composite solution to form a carbon nanotube desalination membrane. The carbon nanotube based desalination membranes may provide superior flow rate and high levels of salt rejection.

公开(公告)号：US20220077392A1

公开(公告)日：2022-03-10

申请号：US17417719

申请日：2020-01-06

申请人： Atom H2O, LLC

发明人： Huaping Li

IPC分类号： H01L51/00 ,  C01B32/159 ,  C01B32/168 ,  H01L51/05 ,  H01L51/10

摘要： High-performance carbon nanotube (CNT) based millimeter-wave transistor technologies and demonstrate monolithic millimeter-wave integrated circuits (MMICs) based thereon, and methods and processes for the fabrication thereof are also provided. CNT technologies and MMICs demonstrate improved power efficiency, linearity, noise and dynamic range performance over existing GaAs, SiGe and RF-CMOS technologies. Methods and processes in CNT alignment and deposition, material contact and doping are configured to fabricate high quality CNT arrays beyond the current state-of-the-art and produce high performance RF transistors that are scalable to wafer size to enable fabrication of monolithic integrated circuits based on CNTs.

公开(公告)号：US11069867B2

公开(公告)日：2021-07-20

申请号：US16743844

申请日：2020-01-15

申请人： Atom H2O, LLC

发明人： Huaping Li

IPC分类号： H01L51/05 ,  H01L51/00 ,  C09D11/037 ,  C09D11/52

摘要： An electronically pure carbon nanotube ink, includes a population of semiconducting carbon nanotubes suspended in a liquid, the ink being essentially free of metallic impurities and organic material, and characterized in that when incorporated as a carbon nanotube network in a metal/carbon nanotube network/metal double diode, a nonlinear current-bias curve is obtained on application of a potential from 0.01 V to 100 V. The ink can be used to prepare air-stable n-type thin film transistors having performances similar to current thin film transistors used in flat panel displays amorphous silicon devices and high performance p-type thin film transistors with high-κ dielectrics.