公开(公告)号：US20070274814A1

公开(公告)日：2007-11-29

申请号：US11797528

申请日：2007-05-04

申请人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Shoko Ito ,  Makiko Katano ,  Ayako Mizuno

发明人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Shoko Ito ,  Makiko Katano ,  Ayako Mizuno

IPC分类号： H01L21/677

CPC分类号： H01L21/67276 ,  H01L21/67271 ,  H01L21/67727 ,  H01L21/6773

摘要： A local clean robot-transport plant includes: a plurality of manufacturing apparatuses; a plurality of closed-type transport containers; a container discrimination/selection apparatus; an apparatus group control server. Each of the plurality of closed-type transport containers stores and transports an intermediate product of manufacturing processes along a plurality of interprocess transport paths defined among the plurality of manufacturing apparatuses in accordance with a flow of the manufacturing processes. The container discrimination/selection apparatus is configured to discriminate and select the closed-type transport container of transport type 1 and the closed-type transport container of transport type 2, respectively, from among the plurality of closed-type transport containers. The apparatus group control server is configured to collectively control operation of the plurality of manufacturing apparatuses and the container discrimination/selection apparatus to move the closed-type transport container of transport type 2 to a specific interprocess transport path and to move the closed-type transport container of transport type 1 to the interprocess transport path other than the specific interprocess transport path.

摘要翻译： 本地清洁机器人运输设备包括：多个制造装置; 多个封闭式运输容器; 容器辨认/选择装置; 设备组控制服务器。 多个封闭式运输容器中的每一个根据制造过程的流程，沿着多个制造装置之间限定的多个处理间传送路径来存储和传送制造过程的中间产品。 容器识别/选择装置被配置为分别从多个封闭式运输集装箱中分别选择运输类型1的封闭式运输集装箱和运输类型2的封闭式运输集装箱。 设备组控制服务器被配置为共同地控制多个制造设备和容器识别/选择设备的操作，以将传送类型2的封闭式运输容器移动到特定的处理间传送路径，并且移动封闭式传送 1类运输集装箱到特定进程间运输路径以外的进程间运输路径。

公开(公告)号：US20080023442A1

公开(公告)日：2008-01-31

申请号：US11826922

申请日：2007-07-19

申请人： Shoko Ito ,  Makiko Katano ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi

发明人： Shoko Ito ,  Makiko Katano ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi

IPC分类号： C03C25/68 ,  C23C16/00

CPC分类号： H01L21/67393 ,  H01L21/67253 ,  H01L21/76224 ,  H01L27/115 ,  H01L27/11521 ,  Y10S414/135

摘要： A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

摘要翻译： 一种使用封闭式输送容器的电子装置的制造方法，其特征在于，包括：在所述封闭式输送容器内部的相对湿度比所述封闭式输送容器外的环境相对湿度低的特定过程输送路径， 存储在封闭式运输容器中的中间产品从第一制造过程运输到第二制造过程。 第一制造方法允许含有氮原子的碱性化合物从中间产物中释放出来。 第二制造过程由于碱性化合物的污染而易于降解。

公开(公告)号：US08119020B2

公开(公告)日：2012-02-21

申请号：US11826922

申请日：2007-07-19

申请人： Shoko Ito ,  Makiko Katano ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi

发明人： Shoko Ito ,  Makiko Katano ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi

IPC分类号： B44C1/22

CPC分类号： H01L21/67393 ,  H01L21/67253 ,  H01L21/76224 ,  H01L27/115 ,  H01L27/11521 ,  Y10S414/135

摘要： A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

摘要翻译： 一种使用封闭式输送容器的电子装置的制造方法，其特征在于，包括：在所述封闭式输送容器内部的相对湿度比所述封闭式输送容器外的环境相对湿度低的特定过程输送路径， 存储在封闭式运输容器中的中间产品从第一制造过程运输到第二制造过程。 第一制造方法允许含有氮原子的碱性化合物从中间产物中释放出来。 第二制造过程由于碱性化合物的污染而易于降解。

公开(公告)号：US07538047B2

公开(公告)日：2009-05-26

申请号：US11451519

申请日：2006-06-13

申请人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

发明人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

IPC分类号： H01L21/469

CPC分类号： H01L21/76229 ,  H01L21/76224

摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

摘要翻译： 一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有 通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜， 含有蒸汽或纯水的气氛。

公开(公告)号：US07071107B2

公开(公告)日：2006-07-04

申请号：US10674382

申请日：2003-10-01

申请人： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

发明人： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

IPC分类号： H01L21/302

CPC分类号： H01L21/02222 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/31111 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/76224 ,  H01L21/76229

摘要： There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

摘要翻译： 公开了一种制造半导体器件的方法，其中在硅衬底的表面上形成Si 3 N 4 N 4膜作为掩模构件，然后蚀刻形成 一个STI沟槽。 将过氢化硅氮烷聚合物的溶液涂布在其上形成有STI沟槽的硅衬底的表面上，以在其上沉积涂膜（PSZ膜）。 去除沉积在掩模构件上的PSZ膜，使PSZ膜的一部分留在沟槽内，其中控制PSZ膜的厚度使其从STI沟槽底部的高度变为600nm以下。 然后，在含水蒸汽的气氛中对PSZ膜进行热处理，通过PSZ膜的化学反应将PSZ膜转换为氧化硅膜。 随后，对氧化硅膜进行热处理以使氧化硅膜致密化。

公开(公告)号：US07407864B2

公开(公告)日：2008-08-05

申请号：US11175305

申请日：2005-07-07

申请人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

发明人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

IPC分类号： H01L21/76

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/316 ,  H01L21/76224

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚 具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅 元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

公开(公告)号：US20060205233A1

公开(公告)日：2006-09-14

申请号：US11431076

申请日：2006-05-10

申请人： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

发明人： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02222 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/31111 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/76224 ,  H01L21/76229

摘要： There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

公开(公告)号：US20060205165A1

公开(公告)日：2006-09-14

申请号：US11175305

申请日：2005-07-07

申请人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

发明人： Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Keisuke Nakazawa ,  Osamu Arisumi ,  Takeshi Hoshi ,  Katsuhiko Tachibana

IPC分类号： H01L21/76

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31053 ,  H01L21/316 ,  H01L21/76224

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚 具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅 元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

公开(公告)号：US20060151855A1

公开(公告)日：2006-07-13

申请号：US11285156

申请日：2005-11-23

申请人： Masahiro Kiyotoshi ,  Atsuko Kawasaki

发明人： Masahiro Kiyotoshi ,  Atsuko Kawasaki

IPC分类号： H01L21/76 ,  H01L29/06

CPC分类号： H01L29/7833 ,  H01L21/76229 ,  H01L29/6659

摘要： A semiconductor device includes a semiconductor substrate including an isolation trench provided on a surface thereof, an isolation film provided in the isolation trench, the isolation film including a coating film and a silicon oxide film provided on the coating film, and an oxide film provided between the isolation trench and the isolation film, the oxide film having a thickness such that a portion on a side surface of the isolation trench corresponding to an interface portion between the coating film and the silicon oxide film is thicker than other portion on the side surface.

摘要翻译： 半导体器件包括：半导体衬底，包括设置在其表面上的隔离沟槽;隔离膜，设置在隔离沟槽中;隔离膜包括涂覆膜和设置在涂膜上的氧化硅膜;以及氧化膜， 隔离沟槽和隔离膜，氧化膜的厚度使得与涂膜和氧化硅膜之间的界面部分相对应的隔离沟槽的侧表面上的部分比侧表面上的其它部分厚。

公开(公告)号：US20050170608A1

公开(公告)日：2005-08-04

申请号：US10989319

申请日：2004-11-17

申请人： Masahiro Kiyotoshi ,  Atsuko Kawasaki ,  Katsuhiko Hieda

发明人： Masahiro Kiyotoshi ,  Atsuko Kawasaki ,  Katsuhiko Hieda

IPC分类号： H01L21/76 ,  H01L21/316 ,  H01L21/762 ,  H01L21/8242 ,  H01L29/78

CPC分类号： H01L21/76235 ,  H01L21/76229 ,  H01L27/10861

摘要： A semiconductor device comprises a semiconductor substrate; a trench formed on the semiconductor substrate; and an isolation region filled in the trench, the isolation region having a lower wet etching rate near the upper edge of said trench than that of the lower portion of said trench, and the wet etching rate of the isolation region being almost uniform on a plane parallel to the surface of the semiconductor substrate.

摘要翻译： 半导体器件包括半导体衬底; 形成在半导体衬底上的沟槽; 以及填充在所述沟槽中的隔离区域，所述隔离区域在所述沟槽的上边缘附近具有比所述沟槽的下部的较低的湿蚀刻速率，并且所述隔离区域的湿蚀刻速率在平面上几乎均匀 平行于半导体衬底的表面。