Local clean robot-transport plant and robot-transport manufacturing method
    1.
    发明申请
    Local clean robot-transport plant and robot-transport manufacturing method 审中-公开
    本地清洁机器人运输工厂和机器人运输制造方法

    公开(公告)号:US20070274814A1

    公开(公告)日:2007-11-29

    申请号:US11797528

    申请日:2007-05-04

    IPC分类号: H01L21/677

    摘要: A local clean robot-transport plant includes: a plurality of manufacturing apparatuses; a plurality of closed-type transport containers; a container discrimination/selection apparatus; an apparatus group control server. Each of the plurality of closed-type transport containers stores and transports an intermediate product of manufacturing processes along a plurality of interprocess transport paths defined among the plurality of manufacturing apparatuses in accordance with a flow of the manufacturing processes. The container discrimination/selection apparatus is configured to discriminate and select the closed-type transport container of transport type 1 and the closed-type transport container of transport type 2, respectively, from among the plurality of closed-type transport containers. The apparatus group control server is configured to collectively control operation of the plurality of manufacturing apparatuses and the container discrimination/selection apparatus to move the closed-type transport container of transport type 2 to a specific interprocess transport path and to move the closed-type transport container of transport type 1 to the interprocess transport path other than the specific interprocess transport path.

    摘要翻译: 本地清洁机器人运输设备包括:多个制造装置; 多个封闭式运输容器; 容器辨认/选择装置; 设备组控制服务器。 多个封闭式运输容器中的每一个根据制造过程的流程,沿着多个制造装置之间限定的多个处理间传送路径来存储和传送制造过程的中间产品。 容器识别/选择装置被配置为分别从多个封闭式运输集装箱中分别选择运输类型1的封闭式运输集装箱和运输类型2的封闭式运输集装箱。 设备组控制服务器被配置为共同地控制多个制造设备和容器识别/选择设备的操作,以将传送类型2的封闭式运输容器移动到特定的处理间传送路径,并且移动封闭式传送 1类运输集装箱到特定进程间运输路径以外的进程间运输路径。

    Method for manufacturing electronic device
    2.
    发明授权
    Method for manufacturing electronic device 有权
    电子设备制造方法

    公开(公告)号:US08119020B2

    公开(公告)日:2012-02-21

    申请号:US11826922

    申请日:2007-07-19

    IPC分类号: B44C1/22

    摘要: A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

    摘要翻译: 一种使用封闭式输送容器的电子装置的制造方法,其特征在于,包括:在所述封闭式输送容器内部的相对湿度比所述封闭式输送容器外的环境相对湿度低的特定过程输送路径, 存储在封闭式运输容器中的中间产品从第一制造过程运输到第二制造过程。 第一制造方法允许含有氮原子的碱性化合物从中间产物中释放出来。 第二制造过程由于碱性化合物的污染而易于降解。

    Method for manufacturing electronic device
    3.
    发明申请
    Method for manufacturing electronic device 有权
    电子设备制造方法

    公开(公告)号:US20080023442A1

    公开(公告)日:2008-01-31

    申请号:US11826922

    申请日:2007-07-19

    IPC分类号: C03C25/68 C23C16/00

    摘要: A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

    摘要翻译: 一种使用封闭式输送容器的电子装置的制造方法,其特征在于,包括:在所述封闭式输送容器内部的相对湿度比所述封闭式输送容器外的环境相对湿度低的特定过程输送路径, 存储在封闭式运输容器中的中间产品从第一制造过程运输到第二制造过程。 第一制造方法允许含有氮原子的碱性化合物从中间产物中释放出来。 第二制造过程由于碱性化合物的污染而易于降解。

    Immersion lithography apparatus and exposure method
    4.
    发明授权
    Immersion lithography apparatus and exposure method 失效
    浸渍光刻设备和曝光方法

    公开(公告)号:US07889313B2

    公开(公告)日:2011-02-15

    申请号:US11925483

    申请日:2007-10-26

    摘要: An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.

    摘要翻译: 浸没式光刻设备包括:投影光学系统,其将掩模的图案投影到基底上; 衬底清洁单元,其在所述图案的投影之前清洁所述衬底; 将液体供给到投影光学系统和基板之间的浸渍区域和基板清洗单元的液体供给机构; 从浸渍区域排出的液体通过的第一液体排出路径; 以及从基板清洗单元排出的液体通过的第二液体排出路径。

    SEMICONDUCTOR DEVICE FABRICATION MASK AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATION MASK AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件制造掩模及其制造方法

    公开(公告)号:US20110053058A1

    公开(公告)日:2011-03-03

    申请号:US12871193

    申请日:2010-08-30

    IPC分类号: G03F1/00

    摘要: According to one embodiment, a semiconductor device fabrication mask comprises a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on portions of the light-transmitting substrate, wherein the concentration of an S-containing material is 0.4% or less within the range of a depth of 1 nm from the exposed surface of the light-transmitting substrate, the surface of the semi-light-shielding pattern, and the surface of the light-shielding pattern.

    摘要翻译: 根据一个实施例,半导体器件制造掩模包括透光衬底和形成在透光衬底的部分上的半光屏蔽图案和遮光图案,其中含S材料的浓度 在距离透光性基板的露出面1cm,半光屏蔽图案的表面和遮光图案的表面1nm的深度的范围内为0.4%以下。

    Method of maintaining cleanliness of substrates and box for accommodating substrates
    6.
    发明授权
    Method of maintaining cleanliness of substrates and box for accommodating substrates 有权
    保持基板清洁度的方法和用于容纳基板的盒子

    公开(公告)号:US06284020B1

    公开(公告)日:2001-09-04

    申请号:US09555501

    申请日:2000-06-02

    IPC分类号: B01D5000

    摘要: A method of maintaining cleanliness of substrates including a first step for accommodating at least a piece of substrate having a gaseous impurity-trapping filter arranged close thereto in a hermetically sealed box, and a second step for circulating the atmosphere in the box at a rate of two or more times a minute so that impurities in the atmosphere are adsorbed by the gaseous impurity-trapping filter. A box for accommodating substrates includes a housing in which space for accommodating the substrates is hermetically closed with a lid, a gaseous impurity-trapping filter arranged in the housing and adapted to adsorb impurities contained in the atmosphere in space, and an atmosphere-circulating device having a ratio of the circulating capacity to the space volume of not smaller than 2 in order to circulate the atmosphere so as to pass it through the gaseous impurity-trapping filter.

    摘要翻译: 一种保持基板的清洁的方法,包括:第一步骤,用于将至少一片具有靠近其设置的气态杂质捕获过滤器的基板容纳在气密密封的盒子中;第二步骤,用于使盒子中的气氛以 两次或更多次,使得大气中的杂质被气态杂质捕获过滤器吸附。 用于容纳基板的盒子包括壳体,其中容纳基板的空间用盖子气密地封闭,气体杂质捕获过滤器布置在壳体中并且适于吸收空间中包含的杂质,并且气氛循环装置 使循环容积与空间体积的比率不小于2,以使气氛循环,以使其通过气态杂质捕获过滤器。

    Immersion Lithography Apparatus and Exposure Method
    7.
    发明申请
    Immersion Lithography Apparatus and Exposure Method 失效
    浸没平版印刷设备和曝光方法

    公开(公告)号:US20080106713A1

    公开(公告)日:2008-05-08

    申请号:US11925483

    申请日:2007-10-26

    IPC分类号: G03B27/52

    摘要: An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.

    摘要翻译: 浸没式光刻设备包括:投影光学系统,其将掩模的图案投影到基底上; 衬底清洁单元,其在所述图案的投影之前清洁所述衬底; 将液体供给到投影光学系统和基板之间的浸渍区域和基板清洗单元的液体供给机构; 从浸渍区域排出的液体通过的第一液体排出路径; 以及从基板清洗单元排出的液体通过的第二液体排出路径。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07232763B2

    公开(公告)日:2007-06-19

    申请号:US10959501

    申请日:2004-10-07

    IPC分类号: H01L21/311

    摘要: A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment.

    摘要翻译: 一种制造半导体器件的方法包括使用碳氟化合物气体对包含形成在半导体衬底之上并被绝缘膜形成的铜层的半导体晶片进行干蚀刻,以部分地去除绝缘膜,从而至少部分曝光 铜层的表面。 将其表面至少部分暴露的铜层进行氮等离子体处理。 将具有氮等离子体处理的铜层的半导体晶片暴露于大气中,然后对半导体晶片进行表面处理。

    Sample contamination method
    10.
    发明授权
    Sample contamination method 有权
    样品污染方法

    公开(公告)号:US08771535B2

    公开(公告)日:2014-07-08

    申请号:US13188719

    申请日:2011-07-22

    IPC分类号: H01L21/66 G01N1/28

    摘要: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

    摘要翻译: 根据一个实施方案的样品污染方法包括将含有污染物的化学溶液喷射到壳体中,通过喷射将半导体衬底携带到填充有化学溶液的壳体中,使半导体衬底在填充有化学溶液的壳体中保持预定的 时间,并且在预定时间过去之后将半导体衬底从套管中提出。