公开(公告)号：US20170369743A1

公开(公告)日：2017-12-28

申请号：US15536447

申请日：2015-12-04

Applicant: BASF SE

Inventor： Max SIEBERT ,  Michael LAUTER ,  Yongqing LAN ,  Robert REICHARDT ,  Alexandra MUENCH ,  Manuel SIX ,  Gerald DANIEL ,  Bastian Marten NOLLER ,  Kevin HUANG ,  Sheik Ansar USMAN IBRAHIM

IPC: C09G1/04 ,  H01L21/304 ,  C09K13/00 ,  H01L21/461 ,  C09G1/02

CPC classification number: C09G1/04 ,  C09G1/02 ,  C09K13/00 ,  H01L21/304 ,  H01L21/461

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

公开(公告)号：US20170226381A1

公开(公告)日：2017-08-10

申请号：US15502932

申请日：2015-07-24

Applicant: BASF SE

Inventor： Yongqing LAN ,  Bastian Marten NOLLER ,  Yuzhou Li ,  Liang JIANG ,  Daniel Kwo-Hung SHEN ,  Reza GOLZARIAN

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

公开(公告)号：US20170166778A1

公开(公告)日：2017-06-15

申请号：US15115747

申请日：2015-01-21

Applicant: BASF SE

Inventor： Michael LAUTER ,  Roland LANGE ,  Bastian Marten NOLLER ,  Max SIEBERT

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09G1/18 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/76224

Abstract: A chemical mechanical polishing (CMP) composition comprising (A) Colloidal or fumed inorganic particles or a mixture thereof, (B) a poly (amino acid) and or a salt thereof, and (M) an aqueous medium.

公开(公告)号：US20160013066A1

公开(公告)日：2016-01-14

申请号：US14771343

申请日：2014-05-26

Applicant: BASF SE

Inventor： Bastian Marten NOLLER ,  Manuel SIX

IPC: H01L21/306 ,  H01L29/06 ,  C09G1/02

CPC classification number: H01L21/30625 ,  B24B37/044 ,  C09G1/02 ,  H01L29/0649

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) elemental germanium or (ii) Si1-xGex with 0.1≦x

Abstract translation: 使用化学机械抛光（CMP）组合物（Q）进行基材（S）的化学机械抛光，其包括（i）元素锗或（ii）具有0.1和n1E的Si1-xGex; x <1，其中所述CMP组合物 ）基本上由（A）0.01〜3重量％的铝颗粒组成。 基于CMP组合物（B）的总重量，至少一种氧化剂，（M）水性介质和（N）任选的至少一种pH调节剂，其中CMP组合物（Q）的pH为2至6 。

公开(公告)号：US20160160083A1

公开(公告)日：2016-06-09

申请号：US14905635

申请日：2014-07-08

Applicant: BASF SE

Inventor： Michael LAUTER ,  Yuzhuo Li ,  Bastian Marten NOLLER ,  Roland LANGE ,  Robert REICHARDT ,  Yongqing LAN ,  Volodymyr BOYKO ,  Alexander KRAUS ,  Joachim Von SEYERL ,  Sheik Ansar USMAN IBRAHIM ,  Aax SIEBERT ,  Kristine HARTNAGEL ,  Joachim DENGLER ,  Nina Susanne HILLESHEIM

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09D5/027 ,  C09D7/65 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.

Abstract translation: 描述了包含含有二氧化铈的磨料颗粒的化学机械抛光（CMP）组合物。