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1.发明申请PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A COMPOUND CONTAINING AN N-HETEROCYCLE 审中-公开在包含含有N-杂环化合物的CMP组合物存在下，包含III-V材料的化学机械抛光（CMP）的半导体器件的制造方法公开(公告)号：US20150099361A1
公开(公告)日：2015-04-09
申请号：US14394870
申请日：2013-04-29
Applicant: BASF SE
Inventor： Diana Franz , Bastian Marten Noller
IPC: C09G1/02 , H01L21/306
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/02024 , H01L21/30625
Abstract: A process for the manufacture of semiconductor devices is provided. The process comprises the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a polymer comprising at least one N-heterocycle, and (M) an aqueous medium and whereas Q1 has a pH of from 1.5 to 4.5.
Abstract translation: 提供了一种制造半导体器件的方法。 该方法包括在包含（A）无机颗粒，有机颗粒或其混合物或复合物的化学机械抛光组合物（Q1）的存在下对包含至少一种III-V材料的基材或层进行化学机械抛光 ，（B）包含至少一个N-杂环的聚合物和（M）水性介质，而Q1的pH为1.5-4.5。
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公开(公告)号：US10227506B2
公开(公告)日：2019-03-12
申请号：US15536447
申请日：2015-12-04
Applicant: BASF SE
Inventor： Max Siebert , Michael Lauter , Yongqing Lan , Robert Reichardt , Alexandra Muench , Manuel Six , Gerald Daniel , Bastian Marten Noller , Kevin Huang , Sheik Ansar Usman Ibrahim
IPC: C09G1/04 , C09G1/02 , C09K13/00 , H01L21/304 , H01L21/461
Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.
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公开(公告)号：US09777192B2
公开(公告)日：2017-10-03
申请号：US14377648
申请日：2013-01-25
Applicant: BASF SE
Inventor： Yuzhuo Li , Bastian Marten Noller , Michael Lauter , Roland Lange
IPC: C09G1/02 , H01L21/3105 , C09K3/14 , H01L21/306 , C09G1/18
CPC classification number: C09G1/02 , C09G1/18 , C09K3/1463 , H01L21/30625 , H01L21/31053
Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.
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Patent Agency Ranking
4.发明申请PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 有权在包含特定非离子表面活性剂的CMP组合物存在下，包含III-V材料的化学机械抛光（CMP）的半导体器件的制造方法公开(公告)号：US20150175845A1
公开(公告)日：2015-06-25
申请号：US14402975
申请日：2013-05-21
Applicant: BASF SE
Inventor： Yuzhuo Li , Bastian Marten Noller , Christophe Gillot , Diana Franz
IPC: C09G1/02 , H01L21/306
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.
Abstract translation: 一种用于制造半导体器件的方法，包括在化学机械抛光组合物（Q1）的存在下对包含至少一种III-V材料的基底或层进行化学机械抛光，所述化学机械抛光组合物包含（A）无机颗粒，有机颗粒， 或其混合物或复合物，（B）至少一种具有（b1）至少一个疏水基团的两亲性非离子表面活性剂; 和（b2）至少一种选自包含（b22）氧化烯单体单元以外的氧化烯单体单元的聚氧化烯基的亲水基团; 和（M）水性介质。
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5.发明授权公开(公告)号：US10214663B2
公开(公告)日：2019-02-26
申请号：US15502932
申请日：2015-07-24
Applicant: BASF SE
Inventor： Yongqing Lan , Bastian Marten Noller , Yuzhuo Li , Liang Jiang , Daniel Kwo-Hung Shen , Reza Golzarian
IPC: C09G1/02 , C09K3/14 , H01L21/321
Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.
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6.发明申请公开(公告)号：US20180103634A1
公开(公告)日：2018-04-19
申请号：US15562031
申请日：2016-04-08
Applicant: BASF SE
Inventor： Bastian Marten Noller , Maria Angelica Quintero Palomar , Nadege Boudet , Ana Escribano Cuesta
Abstract: Provided herein is an agrochemical composition containing a solid multisite fungicide and a dispersing agent, wherein the dispersing agent has a mass average molar mass greater than 5,000 g/mol and is selected from lignin sulfonates and poly(meth)acrylates. Also provided herein is a method of preparing the agrochemical composition comprising the contacting of the solid multisite fungicide and the dispersing agent. Further, provided herein is a method of controlling phytopathogenic fungi, wherein the agrochemical composition is allowed to act on the respective fungi, their environment or the crop plants to be protected from the respective pest, on the soil and/or on undesired plants and/or on the crop plants and/or on their environment. Additionally, provided herein is a use of the dispersing agent for attenuating the phytotoxicity of multisite fungicides; and seed containing said agrochemical composition.
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7.发明授权Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant 有权在包含特定非离子表面活性剂的CMP组合物的存在下，包括III-V材料的化学机械抛光（CMP）的半导体器件的制造方法公开(公告)号：US09416298B2
公开(公告)日：2016-08-16
申请号：US14402975
申请日：2013-05-21
Applicant: BASF SE
Inventor： Yuzhuo Li , Bastian Marten Noller , Christophe Gillot , Diana Franz
IPC: C09G1/02 , H01L21/304 , H01L21/302 , H01L21/321 , H01L21/461 , H01L21/306 , H01L21/02
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
Abstract: A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.
Abstract translation: 一种用于制造半导体器件的方法，包括在化学机械抛光组合物（Q1）的存在下对包含至少一种III-V材料的基底或层进行化学机械抛光，所述化学机械抛光组合物包含（A）无机颗粒，有机颗粒， 或其混合物或复合物，（B）至少一种具有（b1）至少一个疏水基团的两亲性非离子表面活性剂; 和（b2）至少一种选自包含（b22）氧化烯单体单元以外的氧化烯单体单元的聚氧化烯基的亲水基团; 和（M）水性介质。
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8.发明申请公开(公告)号：US20150017454A1
公开(公告)日：2015-01-15
申请号：US14377648
申请日：2013-01-25
Applicant: BASF SE
Inventor： Yuzhuo Li , Bastian Marten Noller , Michael Lauter , Roland Lange
IPC: C09G1/02 , H01L21/306 , C09K3/14
CPC classification number: C09G1/02 , C09G1/18 , C09K3/1463 , H01L21/30625 , H01L21/31053
Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.
Abstract translation: 提供化学机械抛光组合物。 组合物包含（A）无机颗粒，有机颗粒或其混合物或复合物，（B）蛋白质和（C）水性介质。
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