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    HIGH-SILICON-CONTENT WET-REMOVABLE PLANARIZING LAYER
    1.
    发明申请
    HIGH-SILICON-CONTENT WET-REMOVABLE PLANARIZING LAYER 有权

    公开(公告)号：US20210125829A1

    公开(公告)日：2021-04-29

    申请号：US17079916

    申请日：2020-10-26

    Applicant: Brewer Science, Inc.

    Inventor： Ming Luo ,  Yubao Wang ,  Kaumba Sakavuyi ,  Vandana Krishnamurthy

    IPC: H01L21/033 ,  H01L21/027 ,  G03F1/46

    Abstract: Lithographic compositions for use as wet-removable silicon gap fill layers are provided. The method of using these compositions involves utilizing a silicon gap fill layer over topographic features on a substrate. The silicon gap fill layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon gap fill layers are formed from spin-coatable, polymeric compositions with high silicon content, and these layers exhibit good gap fill and planarization performance and high oxygen etch resistance.

    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES
    2.
    发明申请
    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES 审中-公开
    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR BUGICATION OF DARK-FIELD FEATURES

    公开(公告)号：US20140225252A1

    公开(公告)日：2014-08-14

    申请号：US13765429

    申请日：2013-02-12

    Applicant: BREWER SCIENCE INC.

    Inventor： Qin Lin ,  Daniel M. Sullivan ,  Tony D. Flaim ,  Yubao Wang ,  Jamie Lea Storie

    IPC: H01L21/308 ,  H01L23/498 ,  H01L21/768

    CPC classification number: H01L23/49811 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A reversal lithography approach is disclosed in which dark-field features are created on microelectronic substrates using bright-field lithography processes and a pattern reversal method. A wafer stack having a patterned imaging layer is provided that has a plurality of features formed thereon. A pattern reversal composition is applied to the patterned imaging layer overcoating the features, followed by wet etch-back of partially cured portions of the composition to expose the tops of the features. The imaging layer is then removed resulting in reversal of the pattern into the pattern reversal composition. This reversed pattern is then transferred into subsequent layers

    Abstract translation: 公开了一种反转光刻方法，其中使用亮场光刻工艺和图案反转方法在微电子基板上产生暗场特征。 提供具有图案化成像层的晶片叠层，其具有形成在其上的多个特征。 将图案反转组合物施加到覆盖特征的图案化成像层上，随后湿法蚀刻组合物的部分固化部分以暴露特征的顶部。 然后去除成像层，导致图案反转成图案反转组合物。 然后将该反转图案转移到随后的层中

    Underlayers for EUV lithography
    4.
    发明授权
    Underlayers for EUV lithography 有权

    公开(公告)号：US11361967B2

    公开(公告)日：2022-06-14

    申请号：US16999223

    申请日：2020-08-21

    Applicant: Brewer Science, Inc.

    Inventor： Yichen Liang ,  Andrea M. Chacko ,  Yubao Wang ,  Douglas J. Guerrero

    IPC: H01L21/033 ,  H01L21/027

    Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

    UNDERLAYERS FOR EUV LITHOGRAPHY
    6.
    发明申请
    UNDERLAYERS FOR EUV LITHOGRAPHY 有权

    公开(公告)号：US20210057219A1

    公开(公告)日：2021-02-25

    申请号：US16999223

    申请日：2020-08-21

    Applicant: Brewer Science, Inc.

    Inventor： Yichen Liang ,  Andrea M. Chacko ,  Yubao Wang ,  Douglas J. Guerrero

    IPC: H01L21/033 ,  H01L21/027

    Abstract: New lithographic compositions for use as EUV silicon hardmask layers are provided. The present invention provides methods of fabricating microelectronic structures and the resulting structures formed thereby using EUV lithographic processes. The method involves utilizing a silicon hardmask layer immediately below the photoresist layer. The silicon hardmask layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred silicon hardmask layers are formed from spin-coatable, polymeric compositions. The inventive method improves adhesion and reduces or eliminates pattern collapse issues.

    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING
    8.
    发明申请
    SPIN-ON CARBON COMPOSITIONS FOR LITHOGRAPHIC PROCESSING 有权
    用于石墨加工的旋转碳组合物

    公开(公告)号：US20140356593A1

    公开(公告)日：2014-12-04

    申请号：US14461109

    申请日：2014-08-15

    Applicant: Brewer Science Inc.

    Inventor： Vandana Krishnamurthy ,  Daniel M. Sullivan ,  Yubao Wang ,  Qin Lin ,  Sean Simmons

    IPC: B32B33/00 ,  B32B9/04

    CPC classification number: B32B33/00 ,  B32B9/04 ,  B32B2255/26 ,  B32B2307/70 ,  B32B2379/08 ,  C08G73/00 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C09D179/08 ,  G03F7/094 ,  H01L21/0332 ,  H01L21/3081 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/30 ,  Y10T428/31623 ,  Y10T428/31667 ,  Y10T428/31681 ,  Y10T428/31721

    Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

    Abstract translation: 本文描述的本发明涉及在溶剂体系中包含聚酰胺酸组合物和交联剂的旋涂碳材料。 这些材料在三层光刻工艺中是有用的。 用本发明组合物制成的薄膜不溶于通常用于平版印刷材料的溶剂中，例如但不限于PGME，PGMEA和环己酮。 然而，这些膜可以溶解在通常用于光刻中的显影剂中。 在一个实施方案中，可以在高温下加热膜以改善用于高温处理的热稳定性。 不管实施例如何，材料可以应用于平面/平面或图案化表面。 有利地，该材料在使用碳氟化合物蚀刻的图案转移到硅衬底期间表现出摆动阻力。

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