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公开(公告)号：US20170219757A1
公开(公告)日：2017-08-03
申请号：US15432103
申请日：2017-02-14
Applicant: Bal Mukund Dhar
Inventor： Bal Mukund Dhar
CPC classification number: G02B6/02 , F24S20/25 , F24S23/12 , F24S23/70 , F24S23/75 , G02B6/0036 , G02B6/032 , G02B6/10 , G02B6/4214 , G02B6/4287 , G02B6/4298 , H01L31/0543 , H01L31/0547 , H02S40/22 , Y02E10/40 , Y02E10/52 , Y10T29/49826 , Y10T29/49888
Abstract: A light guide apparatus that can redirect light impinging on the apparatus over a wide range of incident angles and can concentrate light without using a tracking system and methods for fabrication.
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公开(公告)号：US10101525B2
公开(公告)日：2018-10-16
申请号：US15432103
申请日：2017-02-14
Applicant: Bal Mukund Dhar
Inventor： Bal Mukund Dhar
Abstract: A light guide apparatus that can redirect light impinging on the apparatus over a wide range of incident angles and can concentrate light without using a tracking system and methods for fabrication.
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公开(公告)号：US20100289019A1
公开(公告)日：2010-11-18
申请号：US12864407
申请日：2009-04-10
Applicant: Howard Edan Katz , Bal Mukund Dhar
Inventor： Howard Edan Katz , Bal Mukund Dhar
CPC classification number: H01L51/0018 , G03F7/0035 , G03F7/70058 , H01L51/0014 , H01L51/0023 , H01L51/0097 , H01L51/0541 , H01L51/0545 , H01L51/102 , H01L51/52 , Y10T428/24479
Abstract: A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.
Abstract translation: 用于制造空间图案化结构的方法包括在空间图案化结构的子结构的至少一部分上形成材料层，在材料层上形成氟化材料的阻挡层以提供中间结构，并暴露 将所述中间结构结合到所述第二材料或辐射中的至少一种以引起所述中间结构的至少一部分的化学变化或结构变化中的至少一种。 阻挡层在曝光期间基本上保护材料层免受化学和结构变化的影响。 按照这种方法生产子结构。
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Patent Agency Ranking
4.发明申请Doped interfacial modification layers for stability enhancement for bulk heterojunction organic solar cells 审中-公开掺杂的界面改性层用于体异质结有机太阳能电池的稳定性增强公开(公告)号：US20100147386A1
公开(公告)日：2010-06-17
申请号：US12591509
申请日：2009-11-20
Applicant: Jessica Benson-smith , Christohper T. Brown , Shijun Jia , Darin W. Laird , Christine L. McGuiness , Bal Mukund Dhar
Inventor： Jessica Benson-smith , Christohper T. Brown , Shijun Jia , Darin W. Laird , Christine L. McGuiness , Bal Mukund Dhar
IPC: H01L31/0256
CPC classification number: H01L51/002 , C08G2261/91 , H01L51/0036 , H01L51/0037 , H01L51/424 , H01L51/4253 , H01L51/441 , Y02E10/549
Abstract: Organic photovoltaic (OPV) devices comprising an organic semiconductor doped with a metal or organic dopant to form an interfacial modification layer, where the layer is disposed on an active layer including a conjugated polymer and a fullerene are described. In the layer, the organic semiconductor can be BPhen or TPBI, and the dopant can be a metal or an organic material. In the active layer, the conjugated polymer can be P3HT and the fullerene can be PCBM or indenyl-substituted fullerene. Improved OPV efficiency and lifetime can be achieved. Good testing results are obtained despite high humidity and high temperature, and modules can be made.
Abstract translation: 描述了包含掺杂有金属或有机掺杂剂的有机半导体以形成界面改性层的有机光伏（OPV）器件，其中该层设置在包含共轭聚合物和富勒烯的有源层上。 在该层中，有机半导体可以是BPhen或TPBI，掺杂剂可以是金属或有机材料。 在活性层中，共轭聚合物可以是P3HT，富勒烯可以是PCBM或茚基取代的富勒烯。 可以实现OPV效率和寿命的提高。 尽管高湿度和高温也能获得良好的测试结果，但可以制成模块。
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公开(公告)号：US20240367100A1
公开(公告)日：2024-11-07
申请号：US18653845
申请日：2024-05-02
Applicant: Bal Mukund Dhar
Inventor： Bal Mukund Dhar
Abstract: Embodiments described herein relate to a method of geological CO2 storage via in-situ mineralization of trona, the method comprising injecting a mixture comprising CO2 and H2O in a geological formation comprising trona, wherein the H2O dissolves a portion of trona to form sodium carbonate in solution, and the CO2 reacts with the sodium carbonate to form sodium bicarbonate. Embodiments described herein further relate to a method of reactive absorption of CO2 and its simultaneous mineralization in trona comprising, mining of trona rock via solution mining to form a trona solution, reacting an input gas mixture comprising CO2 with the trona solution to form sodium bicarbonate. Embodiments described herein further relate to capture of carbon dioxide directly from air and storing it into solution mined trona as sodium bicarbonate.
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公开(公告)号：US20230183827A1
公开(公告)日：2023-06-15
申请号：US18066262
申请日：2022-12-14
Applicant: Bal Mukund Dhar
Inventor： Bal Mukund Dhar
CPC classification number: C21B15/006 , C22B3/06 , C22B5/00 , C22C33/00 , C25C1/06
Abstract: Embodiments described herein relate to methods of metal extraction from their ores and conversion of ores to metal carbonates for chemical storage of Carbon dioxide in mineral form. In some embodiments, metal alloys are produced directly by co-extraction of metals from a combination of the ores of respective metals in the alloy or from a combination of the oxides of respective metals.
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公开(公告)号：US09897569B2
公开(公告)日：2018-02-20
申请号：US13809134
申请日：2011-07-08
Applicant: Howard Edan Katz , Patrick N. Breysse , Bal Mukund Dhar , Noah Jonathan Tremblay
Inventor： Howard Edan Katz , Patrick N. Breysse , Bal Mukund Dhar , Noah Jonathan Tremblay
IPC: G01N27/414 , G01N27/00 , H01L27/098 , H01L27/28 , H01L27/088 , H01L51/00
CPC classification number: G01N27/4148 , H01L27/088 , H01L27/283 , H01L51/0036 , H01L51/0043 , H01L51/0053 , H01L51/0068
Abstract: An electronic device includes a first field effect transistor that includes a first gate electrode, a first drain electrode, and a first source electrode; a second field effect transistor that includes a second gate electrode, a second drain electrode, and a second source electrode, the first and second gate electrodes being at least one of electrically connected or integral, and the first and second source electrodes being at least one of electrically connected or integral; an input electrode electrically connected to the first and second gate electrodes; and an output electrode electrically connected to the first and second source electrodes. The first field effect transistor also includes a first semiconductor material. The second field effect transistor further also incudes a second semiconductor material. At least one of the first semiconductor material and second semiconductor material has a surface that can be exposed to a fluid and changes an electrical property thereof while being exposed to the fluid.
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公开(公告)号：US20150380651A1
公开(公告)日：2015-12-31
申请号：US14742894
申请日：2015-06-18
Applicant: Howard E. Katz , Bal Mukund Dhar
Inventor： Howard E. Katz , Bal Mukund Dhar
CPC classification number: H01L51/0018 , G03F7/0035 , G03F7/70058 , H01L51/0014 , H01L51/0023 , H01L51/0097 , H01L51/0541 , H01L51/0545 , H01L51/102 , H01L51/52 , Y10T428/24479
Abstract: A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.
Abstract translation: 用于制造空间图案化结构的方法包括在空间图案化结构的子结构的至少一部分上形成材料层，在材料层上形成氟化材料的阻挡层以提供中间结构，并暴露 将所述中间结构结合到所述第二材料或辐射中的至少一种以引起所述中间结构的至少一部分的化学变化或结构变化中的至少一种。 阻挡层在曝光期间基本上保护材料层免受化学和结构变化的影响。 按照这种方法生产子结构。
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