摘要:
Isotropic etching of sacrificial oxide that is adjacent to a trench fill step in an STI wafer can lead to undesired etching away of a sidewall of the trench fill material (e.g., HDP oxide). A sidewall protecting method conformably coats the trench fill step and sacrificial oxide with an etch-resistant carbohydrate. In one embodiment, conforming ARC fluid is spun-on and hardened. A selective, dry plasma etches the hardened ARC over the sacrificial oxide while leaving intact part of the ARC that adheres to the trench fill sidewall. The remnant sidewall material defines a protective shroud which delays the subsequent isotropic etchant (e.g., wet HF solution) from immediately reaching the sidewall of the trench fill material. The delay length of the shroud can be controlled by tuning the etchback recipe. In one embodiment, the percent oxygen in an O2 plus Cl2 plasma and/or bias power during the plasma etch is used as a tuning parameter.
摘要:
A method of forming a double gate structure including sidewalls of substantially similar vertical profile. One photoresist masking step is used to define the top gate, which is then used as a mask to define the bottom gate. The bottom polysilicon layer is etched by a physical and chemical process combination to form a bottom gate with vertical sidewalls substantially inline with the sidewalls of the top gate.
摘要:
A method for improving profile control during an etch of a nitride layer disposed above a silicon substrate is disclosed. The nitride layer 106 is disposed below a photoresist mask 108A. The method includes positioning the substrate, including the nitride layer and the photoresist mask, in a plasma processing chamber. There is also included flowing a chlorine-containing etchant source gas into the plasma processing chamber. Further, there is included igniting a plasma out of the chlorine-containing etchant source gas to form a chlorine-based plasma within the plasma processing chamber. Additionally, there is included treating, using a chlorine-based plasma, the photoresist mask in the plasma processing chamber. The treatment of the photoresist is configured to etch at least a portion of the photoresist mask and to deposit passivation polymer on vertical sidewalls of the photoresist mask without etching through the nitride layer.
摘要:
A processing method to convert oily sticky food byproducts into non-oily and non-sticky dry products by using liquid animal blood is provided. Moisture in the food byproducts is reduced for reducing drying cost and pH is adjusted to 4-10 with preferred range at 6-8, then liquid animal blood is mixed, heated to above 65° C. for coagulation to form non-oily and non-sticky wet products after removing free water. Then related drying equipment is used to produce the non-oily and non-sticky dry products. The non-oily and non-sticky dry products are in particle or fine form with good flowability. The dry products are easy to be stored, transported and applied, which are used in food and feed industries. Besides general feed applications, the non-oily and non-sticky dry products have bypass function for ruminants.
摘要:
An open communication method between at least two sub-networks using a broker node. Each of the sub-networks has a different routable network addressing scheme. The method comprises receiving a packet for a specific application, the packet includes an application identifier, determining if the packet is to be relayed to another of the at least two sub-networks based upon the application identifier, determining if a node receiving the packet is a broker node, relaying the packet to a broker node if not a broker node and forwarding, by the broker node, the packet to at least one node in another of the at least two sub-networks. The node generating the packet communicates using a first of the at least two sub-networks. A broker node communicates using at least two of the at least two sub-networks via a corresponding routable network addressing schemes for each of the sub-networks.
摘要:
Embodiments relate to systems for, and methods of, answering complex questions with mined natural language search results. The systems and methods generally accept a natural language query, retrieve initial search results for the query, and then thin the retrieved results such that acceptable natural language replies to the query are identified. The natural language results may be further processed for presentation to the requestor.
摘要:
An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.
摘要:
The present invention offers systems and methods for effective multiple-hop routing, multicasting and media access control for vehicle group communications that employ directional wireless radio technology. Multi-beam optic-wireless media and streamlined operations provide low-overhead communications among vehicles. Systems and methods are provided to maintain a quasi-stationary group of neighboring vehicles, enable high-throughput on-demand switching among multiple vehicles, enable group coding in the vehicle group to achieve higher throughput, and enable dynamic adjustment of link to maintain desirable vehicle group. The proposed solution builds upon the conception of a MAC-free wireless operation and quasi-stationary vehicular switched network to achieve ultra-low-overhead and high-throughput vehicle communications.
摘要:
A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width.