Method for fabricating patterned magnetic recording device
    2.
    发明授权
    Method for fabricating patterned magnetic recording device 有权
    图案化磁记录装置的制造方法

    公开(公告)号:US08900655B2

    公开(公告)日:2014-12-02

    申请号:US11542129

    申请日:2006-10-04

    摘要: A method of fabricating a patterned perpendicular magnetic recording medium comprises steps of: (a) providing a layer stack including a magnetically soft underlayer (“SUL”) and an overlying non-magnetic interlayer; (b) forming a masking layer on the non-magnetic interlayer; (c) forming a resist layer on the masking layer; (d) forming a pattern of recesses extending through the resist layer and exposing spaced apart surface portions of the masking layer; (e) extending the pattern of recesses through the masking layer to expose spaced apart surface portions of the interlayer; and (f) at least partially filling the pattern of recesses with a magnetically hard material to form a perpendicular magnetic recording layer.

    摘要翻译: 制造图案化的垂直磁记录介质的方法包括以下步骤:(a)提供包括磁软底层(“SUL”)和上覆非磁性中间层的层堆叠; (b)在非磁性中间层上形成掩模层; (c)在掩模层上形成抗蚀剂层; (d)形成延伸穿过抗蚀剂层并露出掩模层的间隔开的表面部分的凹陷图案; (e)将凹槽的图案延伸穿过掩模层以暴露中间层的间隔开的表面部分; 和(f)至少部分地用磁性硬的材料填充凹槽的图案以形成垂直的磁记录层。

    Method for fabricating patterned perpendicular magnetic recording media
    3.
    发明申请
    Method for fabricating patterned perpendicular magnetic recording media 有权
    图案化垂直磁记录介质的制造方法

    公开(公告)号:US20080085362A1

    公开(公告)日:2008-04-10

    申请号:US11542129

    申请日:2006-10-04

    IPC分类号: B05D5/12 B05D1/32

    摘要: A method of fabricating a patterned perpendicular magnetic recording medium comprises steps of: (a) providing a layer stack including a magnetically soft underlayer (“SUL”) and an overlying non-magnetic interlayer; (b) forming a masking layer on the non-magnetic interlayer; (c) forming a resist layer on the masking layer; (d) forming a pattern of recesses extending through the resist layer and exposing spaced apart surface portions of the masking layer; (e) extending the pattern of recesses through the masking layer to expose spaced apart surface portions of the interlayer; and (f) at least partially filling the pattern of recesses with a magnetically hard material to form a perpendicular magnetic recording layer.

    摘要翻译: 制造图案化的垂直磁记录介质的方法包括以下步骤:(a)提供包括磁软底层(“SUL”)和上覆非磁性中间层的层堆叠; (b)在非磁性中间层上形成掩模层; (c)在掩模层上形成抗蚀剂层; (d)形成延伸穿过抗蚀剂层并露出掩模层的间隔开的表面部分的凹陷图案; (e)将凹槽的图案延伸穿过掩模层以暴露中间层的间隔开的表面部分; 和(f)至少部分地用磁性硬的材料填充凹槽的图案以形成垂直的磁记录层。

    Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
    8.
    发明授权
    Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings 失效
    用于磁记录的刚性盘介质上的碳覆盖层的能量梯度离子束沉积

    公开(公告)号:US07018729B2

    公开(公告)日:2006-03-28

    申请号:US10611240

    申请日:2003-06-30

    IPC分类号: G11B5/72

    摘要: The fabrication of the overcoat layer starts with a low energy ion beam to avoid magnetic layer implantation problems, followed by higher deposition energies where the higher energy atoms are implanted into the previously formed lower energy overcoat layer, rather than the magnetic layer. The energy gradient ion beam deposition process therefore results in a thin overcoat layer that is denser than a comparable layer formed by low energy magnetron sputtering, and which overcoat layer provides good mechanical and corrosion protection to the magnetic layer, without degrading the magnetic properties of the magnetic layer.

    摘要翻译: 外涂层的制造以低能离子束开始,以避免磁层注入问题,随后是更高的沉积能量,其中较高的能原子被注入到先前形成的较低能量外涂层而不是磁性层中。 因此,能量梯度离子束沉积过程导致比由低能量磁控管溅射形成的可比层更致密的薄的外涂层,并且该外涂层为磁性层提供良好的机械和腐蚀保护,而不降低磁性能 磁性层。

    Thin film protective layer with buffering interface
    9.
    发明授权
    Thin film protective layer with buffering interface 失效
    具有缓冲接口的薄膜保护层

    公开(公告)号:US06969447B2

    公开(公告)日:2005-11-29

    申请号:US10756556

    申请日:2004-01-12

    摘要: A method for sputtering a thin film protective layer with improved durability is disclosed. The method reduces kinetic energy of the ions of the overcoat material during the initial period of deposition to form a buffering interface which reduces the interpenetration of the atoms of the protective layer into the underlying film. In the method of the invention the sputtering of the overcoat preferably begins with zero (or very low) voltage applied to the underlying film resulting in minimal ion implantation in the underlying film. The “high energy” phase of the process begins with increases in the magnitude of the negative bias voltage applied to the underlying film. The higher energy imparted to ions in the plasma result in a denser and harder film being formed over the initial buffer layer. The protective layer preferably comprises carbon and nitrogen.

    摘要翻译: 公开了一种用于溅射具有改善的耐久性的薄膜保护层的方法。 该方法在初始沉积期间降低外涂层材料的离子的动能,形成缓冲界面,从而减少保护层原子相互渗透到下面的膜中。 在本发明的方法中,外涂层的溅射优选以施加到下面的膜的零(或非常低的)电压开始,导致在底层膜中的最小离子注入。 该过程的“高能”阶段从施加到底层薄膜的负偏置电压的大小的增加开始。 在等离子体中赋予离子的较高能量导致在初始缓冲层上形成更致密和更硬的膜。 保护层优选包含碳和氮。