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    SOLVENT, PROCESS FOR PROVIDING AN ABSORPTION LIQUID, AND USE OF THE SOLVENT
    5.
    发明申请
    SOLVENT, PROCESS FOR PROVIDING AN ABSORPTION LIQUID, AND USE OF THE SOLVENT 审中-公开
    溶剂，提供吸收液体的方法和溶剂的使用

    公开(公告)号：US20140084208A1

    公开(公告)日：2014-03-27

    申请号：US13981392

    申请日：2012-01-12

    申请人： Björn Fischer ,  Ralph Joh ,  Rüdiger Schneider

    发明人： Björn Fischer ,  Ralph Joh ,  Rüdiger Schneider

    IPC分类号： B01D53/62

    CPC分类号： B01D53/62 ,  B01D53/1475 ,  B01D53/1493 ,  Y02C10/06

    摘要： A solvent for selective absorption of CO2 from the flue gas from a combustion plant is provided. The solvent includes an aqueous solution of a secondary amine as an active scrubbing substance and an additive which inhibits the formation of nitrosamine, the additive including a primary amine. A process for providing an absorption liquid is also provided.

    摘要翻译： 提供了用于从来自燃烧设备的烟道气中选择性吸收CO 2的溶剂。 溶剂包括作为活性洗涤物质的仲胺水溶液和抑​​制亚硝胺形成的添加剂，该添加剂包括伯胺。 还提供了一种提供吸收液体的方法。

    SOLVENT, PROCESS FOR PROVIDING AN ABSORPTION LIQUID, AND USE OF THE SOLVENT
    6.
    发明申请
    SOLVENT, PROCESS FOR PROVIDING AN ABSORPTION LIQUID, AND USE OF THE SOLVENT 审中-公开
    溶剂，提供吸收液体的方法和溶剂的使用

    公开(公告)号：US20130320259A1

    公开(公告)日：2013-12-05

    申请号：US13979701

    申请日：2012-01-12

    申请人： Björn Fischer ,  Ralph Joh ,  Rüdige Schneider

    发明人： Björn Fischer ,  Ralph Joh ,  Rüdige Schneider

    IPC分类号： B01D53/62

    CPC分类号： B01D53/62 ,  B01D53/1475 ,  B01D53/1493 ,  Y02C10/06

    摘要： A solvent for selective absorption of CO2 from the flue gas from a combustion plant is provided. The solvent includes an aqueous solution of a secondary amine an active scrubbing substance and an additive, the additive including a salt of vitamin C or E. A process for providing an absorption liquid, and to the use of the solvent for selective absorption of CO2 from the flue gas from a combustion plant is also provided.

    摘要翻译： 提供了用于从来自燃烧设备的烟道气中选择性吸收CO 2的溶剂。 溶剂包括仲胺的水溶液，活性洗涤物质和添加剂，该添加剂包括维生素C或E的盐。提供吸收液体的方法，以及使用该溶剂选择性吸收CO 2的方法 还提供来自燃烧设备的烟道气。

    Semiconductor device and corresponding fabrication method
    7.
    发明授权
    Semiconductor device and corresponding fabrication method 失效
    半导体器件及相应的制造方法

    公开(公告)号：US07045855B2

    公开(公告)日：2006-05-16

    申请号：US10777207

    申请日：2004-02-13

    申请人： Björn Fischer ,  Matthias Goldbach ,  Stefan Jakschik ,  Till Schlösser

    发明人： Björn Fischer ,  Matthias Goldbach ,  Stefan Jakschik ,  Till Schlösser

    IPC分类号： H01L29/792

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/31612 ,  H01L21/31616 ,  H01L27/10823 ,  H01L27/10826 ,  H01L27/10829 ,  H01L27/10838 ,  H01L27/1087 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10879 ,  H01L28/56 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66181 ,  H01L29/785

    摘要： A semiconductor device having a gate structure, the gate structure having a first gate dielectric made of a first material having a first thickness and a first dielectric constant, which is situated directly above the channel region, and an overlying second gate dielectric made of a second material having a second thickness and a second dielectric constant, which is significantly greater than the first dielectric constant; and the first thickness of the first gate dielectric and the second thickness of the second gate dielectric being chosen such that the corresponding thickness of a gate structure with the first gate dielectric, to obtain the same threshold voltage, is at least of the same magnitude as a thickness equal to the sum of the first thickness and the second thickness. The invention also relates to a corresponding fabrication method.

    摘要翻译： 具有栅极结构的半导体器件，所述栅极结构具有由第一材料制成的第一栅极电介质，所述第一材料具有位于所述沟道区域正上方的第一厚度和第一介电常数，以及由第二栅极电介质构成的覆盖的第二栅极电介质 材料具有明显大于第一介电常数的第二厚度和第二介电常数; 并且第一栅极电介质的第一厚度和第二栅极电介质的第二厚度被选择为使得具有第一栅极电介质的栅极结构的相应厚度以获得相同的阈值电压至少与 厚度等于第一厚度和第二厚度之和的厚度。 本发明还涉及相应的制造方法。

    Transistor structure, memory cell, DRAM, and method for fabricating a transistor structure in a semiconductor substrate
    9.
    发明授权
    Transistor structure, memory cell, DRAM, and method for fabricating a transistor structure in a semiconductor substrate 有权
    晶体管结构，存储单元，DRAM以及在半导体衬底中制造晶体管结构的方法

    公开(公告)号：US07183156B2

    公开(公告)日：2007-02-27

    申请号：US10975085

    申请日：2004-10-28

    申请人： Matthias Goldbach ,  Ulrich Frey ,  Björn Fischer

    发明人： Matthias Goldbach ,  Ulrich Frey ,  Björn Fischer

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10888 ,  H01L27/10855 ,  H01L27/10867 ,  H01L27/10873 ,  H01L29/42368

    摘要： Transistor structures, with one source/drain region connected to a charge storage device to be insulated includes an asymmetric gate conductor structure. At a first side wall, which faces the one source/drain region, the asymmetric gate conductor structure has a side wall oxide with a greater thickness and a bird's beak structure with a greater length than at an opposite, second side wall. An effective channel length is increased for the same feature size of the gate conductor structure. Memory cells can be realized in a higher density.

    摘要翻译： 晶体管结构，具有连接到待绝缘的电荷存储装置的一个源极/漏极区域包括非对称栅极导体结构。 在面向一个源极/漏极区域的第一侧壁处，不对称栅极导体结构具有较大厚度的侧壁氧化物和具有比相对的第二侧壁长的长度的鸟嘴结构。 对于栅极导体结构的相同特征尺寸，有效沟道长度增加。 可以以更高的密度实现存储单元。