公开(公告)号：US20110272567A1

公开(公告)日：2011-11-10

申请号：US12774037

申请日：2010-05-05

Applicant: Edward C. Eisner ,  Bo Vanderberg

Inventor： Edward C. Eisner ,  Bo Vanderberg

IPC: H01J37/317 ,  G12B13/00

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/3026 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

Abstract: Some aspects of the present disclosure increase throughput beyond what has previously been achievable by changing the scan rate of a scanned ion beam before the entire cross-sectional area of the ion beam extends beyond an edge of a workpiece. In this manner, the techniques disclosed herein help provide greater throughput than what has previously been achievable. In addition, some embodiments can utilize a rectangular (or other non-circularly shaped) scan pattern that allows real-time beam flux measurements to be taken off-wafer during actual implantation. In these embodiments, the workpiece implantation routine can be changed in real-time to account for real-time changes in beam flux. In this manner, the techniques disclosed herein help provide improved throughput and more accurate dosing profiles for workpieces than previously achievable.

Abstract translation: 本公开的一些方面通过在离子束的整个横截面积延伸超过工件的边缘之前改变扫描离子束的扫描速率而增加了超过先前可实现的吞吐量。 以这种方式，本文公开的技术有助于提供比先前可实现的更大的吞吐量。 此外，一些实施例可以利用允许实际光束通量测量在实际植入期间离开晶片的矩形（或其它非圆形）扫描图案。 在这些实施例中，可以实时地改变工件注入程序以考虑光束通量的实时变化。 以这种方式，本文公开的技术有助于为先前可实现的工件提供改善的生产量和更准确的工件配量曲线。

公开(公告)号：US20090321630A1

公开(公告)日：2009-12-31

申请号：US12477631

申请日：2009-06-03

Applicant: Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

Inventor： Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

IPC: B01D59/44 ,  A61N5/00 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J2237/0492 ,  H01J2237/103 ,  H01J2237/1405 ,  H01J2237/1501 ,  H01J2237/1523 ,  H01J2237/153 ,  H01J2237/21 ,  H01J2237/24528 ,  H01J2237/31705

Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

Abstract translation: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法，其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析，其中选择离子。 一旦离子束被质量分析，离子束然后通过减速器减速，并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供，其中形成磁场以截取离开减速器的离子束中的离子，以选择性地过滤不需要的离子和快速中性粒子。

公开(公告)号：US08138484B2

公开(公告)日：2012-03-20

申请号：US12769226

申请日：2010-04-28

Applicant: Bo Vanderberg

Inventor： Bo Vanderberg

IPC: H01J1/50

CPC classification number: H01J37/1475 ,  H01J37/3171 ,  H01J2237/1523 ,  H01J2237/1526

Abstract: Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.

Abstract translation: 本发明的一些方面通过使用包括其间具有光束路径区域的第一和第二磁性元件的磁束扫描器来促进离子注入。 一个或多个磁通量压缩元件设置在光束路径区域附近以及第一和第二磁性元件之间。 在操作期间，第一和磁性元件协同地在光束路径区域中产生振荡时变磁场，以及时扫描离子束。 一个或多个磁通量压缩元件压缩由第一和第二磁性元件提供的磁通量，从而减少磁力扫描光束所需的功率量（相对于先前的实施方式）。 还公开了其他扫描仪，系统和方法。

公开(公告)号：US20110266456A1

公开(公告)日：2011-11-03

申请号：US12769226

申请日：2010-04-28

Applicant: Bo Vanderberg

Inventor： Bo Vanderberg

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1475 ,  H01J37/3171 ,  H01J2237/1523 ,  H01J2237/1526

Abstract: Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.

Abstract translation: 本发明的一些方面通过使用包括其间具有光束路径区域的第一和第二磁性元件的磁束扫描器来促进离子注入。 一个或多个磁通量压缩元件设置在光束路径区域附近以及第一和第二磁性元件之间。 在操作期间，第一和磁性元件协同地在光束路径区域中产生振荡时变磁场，以及时扫描离子束。 一个或多个磁通量压缩元件压缩由第一和第二磁性元件提供的磁通量，从而减少磁力扫描光束所需的功率量（相对于先前的实施方式）。 还公开了其他扫描仪，系统和方法。

公开(公告)号：US20070120067A1

公开(公告)日：2007-05-31

申请号：US11290344

申请日：2005-11-30

Applicant: Robert Rathmell ,  Bo Vanderberg

Inventor： Robert Rathmell ,  Bo Vanderberg

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication.

Abstract translation: 本发明的一个或多个方面涉及有助于确定离子束和工件之间的相对取向的测量部件。 测量部件对离子辐射敏感，并允许通过相对于离子束移动测量部件来精确地确定测量部件和离子束之间的相对取向。 测量部件相对于工件以已知的关系定向，从而可以建立工件和梁之间的相对取向。 了解离子束和工件之间的相对取向允许工件相对于测量的光束角定向到特定的角度，以更准确和精确地掺杂工件，这增强了半导体制造。

公开(公告)号：US08124946B2

公开(公告)日：2012-02-28

申请号：US12477631

申请日：2009-06-03

Applicant: Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

Inventor： Geoffrey Ryding ,  Theodore Smick ,  Marvin Farley ,  Takao Sakase ,  Bo Vanderberg

IPC: H01J37/317 ,  H01J49/30 ,  H01J49/42

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J2237/0492 ,  H01J2237/103 ,  H01J2237/1405 ,  H01J2237/1501 ,  H01J2237/1523 ,  H01J2237/153 ,  H01J2237/21 ,  H01J2237/24528 ,  H01J2237/31705

Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

Abstract translation: 提供了一种用于在离子注入工件期间对离子束进行磁过滤的系统和方法，其中离子从离子源发射并且将离子加速离开离子源以形成离子束。 离子束通过质量分析器进行质量分析，其中选择离子。 一旦离子束被质量分析，离子束然后通过减速器减速，并且离子束进一步对减速度下游的离子束进行磁过滤。 磁滤波由四极磁能滤波器提供，其中形成磁场以截取离开减速器的离子束中的离子，以选择性地过滤不需要的离子和快速中性粒子。

公开(公告)号：US20060033046A1

公开(公告)日：2006-02-16

申请号：US10917997

申请日：2004-08-13

Applicant: Joseph Ferrara ,  Michael Graf ,  Bo Vanderberg

Inventor： Joseph Ferrara ,  Michael Graf ,  Bo Vanderberg

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/1507 ,  H01J2237/20207 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.

Abstract translation: 提供了离子注入扫描系统​​和方法，用于将离子从离子束提供到工件的处理表面，其中光束在单个方向或平面上电或磁扫描，并且植入的工件围绕位于 相对于光束扫描平面的非零角度，其中工件旋转和光束扫描被同步，以大致恒定的入射角将光束提供给工件处理表面。

公开(公告)号：US08760054B2

公开(公告)日：2014-06-24

申请号：US13010888

申请日：2011-01-21

Applicant: William DiVergilio ,  Bo Vanderberg

Inventor： William DiVergilio ,  Bo Vanderberg

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/026 ,  H01J37/3171 ,  H05H2001/4622

Abstract: A method and apparatus is provided for generating a plasma electron flood using microwave radiation. In one embodiment, a microwave PEF apparatus is configured to generate a magnetic field that rapidly decays over a PEF cavity, resulting in a static magnetic field having a high magnetic field strength near one side (e.g., “bottom”) of the PEF cavity and a low magnetic field strength (e.g., substantially zero) near the opposite side (e.g., “top”) of the PEF comprising an elongated extraction slit. In one particular embodiment, the one or more permanent magnets are located at a position that is spatially opposed to the location of the elongated extraction slit to achieve the rapidly decaying magnetic field.The magnetic field results in an electron cyclotron frequency in a region of the cavity equal to or approximately equal to a microwave radiation frequency so that plasma is generated to diffuse through the extraction apertures.

Abstract translation: 提供了一种使用微波辐射产生等离子体电子泛洪的方法和装置。 在一个实施例中，微波PEF装置被配置为产生在PEF空腔上快速衰减的磁场，导致在PEF空腔的一侧（例如“底部”）附近具有高磁场强度的静态磁场， 靠近PEF的相对侧（例如，“顶部”）附近的低磁场强度（例如，基本为零），包括细长的提取狭缝。 在一个特定实施例中，一个或多个永磁体位于与细长抽取狭缝的位置空间相对的位置，以实现快速衰减的磁场。 磁场导致在空腔区域中的电子回旋加速器频率等于或近似等于微波辐射频率，使得产生等离子体以扩散通过提取孔径。

公开(公告)号：US20120187842A1

公开(公告)日：2012-07-26

申请号：US13010888

申请日：2011-01-21

Applicant: William F. DiVergilio ,  Bo Vanderberg

Inventor： William F. DiVergilio ,  Bo Vanderberg

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/026 ,  H01J37/3171 ,  H05H2001/4622

Abstract: A method and apparatus is provided for generating a plasma electron flood using microwave radiation. In one embodiment, a microwave PEF apparatus is configured to generate a magnetic field that rapidly decays over a PEF cavity, resulting in a static magnetic field having a high magnetic field strength near one side (e.g., “bottom”) of the PEF cavity and a low magnetic field strength (e.g., substantially zero) near the opposite side (e.g., “top”) of the PEF comprising an elongated extraction slit. In one particular embodiment, the one or more permanent magnets are located at a position that is spatially opposed to the location of the elongated extraction slit to achieve the rapidly decaying magnetic field.The magnetic field results in an electron cyclotron frequency in a region of the cavity equal to or approximately equal to a microwave radiation frequency so that plasma is generated to diffuse through the extraction apertures.

Abstract translation: 提供了一种使用微波辐射产生等离子体电子泛洪的方法和装置。 在一个实施例中，微波PEF装置被配置为产生在PEF空腔上快速衰减的磁场，导致在PEF空腔的一侧（例如“底部”）附近具有高磁场强度的静态磁场， 靠近PEF的相对侧（例如，“顶部”）附近的低磁场强度（例如，基本为零），包括细长的提取狭缝。 在一个特定实施例中，一个或多个永磁体位于与细长抽取狭缝的位置空间相对的位置，以实现快速衰减的磁场。 磁场导致在空腔区域中的电子回旋加速器频率等于或近似等于微波辐射频率，使得产生等离子体以扩散通过提取孔径。

公开(公告)号：US20070120075A1

公开(公告)日：2007-05-31

申请号：US11290346

申请日：2005-11-30

Applicant: Robert Rathmell ,  Bo Vanderberg

Inventor： Robert Rathmell ,  Bo Vanderberg

IPC: H01J37/08

CPC classification number: H01J37/304 ,  H01J2237/30455 ,  H01J2237/31703

Abstract: One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.

Abstract translation: 本发明的一个或多个方面涉及通过选择性地调整进料气流的单独参数来稳定离子注入系统内的离子束的电流或密度。 调整气流不需要调整其他操作参数，从而简化稳定过程。 这样可以使光束电流相对较快地稳定，从而可以迅速开始离子注入并持续不间断。 这提高了吞吐量，同时降低了相关的植入成本。