公开(公告)号：US20110272567A1

公开(公告)日：2011-11-10

申请号：US12774037

申请日：2010-05-05

Applicant: Edward C. Eisner ,  Bo Vanderberg

Inventor： Edward C. Eisner ,  Bo Vanderberg

IPC: H01J37/317 ,  G12B13/00

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/3026 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

Abstract: Some aspects of the present disclosure increase throughput beyond what has previously been achievable by changing the scan rate of a scanned ion beam before the entire cross-sectional area of the ion beam extends beyond an edge of a workpiece. In this manner, the techniques disclosed herein help provide greater throughput than what has previously been achievable. In addition, some embodiments can utilize a rectangular (or other non-circularly shaped) scan pattern that allows real-time beam flux measurements to be taken off-wafer during actual implantation. In these embodiments, the workpiece implantation routine can be changed in real-time to account for real-time changes in beam flux. In this manner, the techniques disclosed herein help provide improved throughput and more accurate dosing profiles for workpieces than previously achievable.

Abstract translation: 本公开的一些方面通过在离子束的整个横截面积延伸超过工件的边缘之前改变扫描离子束的扫描速率而增加了超过先前可实现的吞吐量。 以这种方式，本文公开的技术有助于提供比先前可实现的更大的吞吐量。 此外，一些实施例可以利用允许实际光束通量测量在实际植入期间离开晶片的矩形（或其它非圆形）扫描图案。 在这些实施例中，可以实时地改变工件注入程序以考虑光束通量的实时变化。 以这种方式，本文公开的技术有助于为先前可实现的工件提供改善的生产量和更准确的工件配量曲线。

公开(公告)号：US08963107B2

公开(公告)日：2015-02-24

申请号：US13348855

申请日：2012-01-12

Applicant: Edward C. Eisner ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: G01K5/00 ,  H01J37/147

CPC classification number: H01J37/147 ,  G01K5/00 ,  H01J37/05 ,  H01J37/16 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.

Abstract translation: 可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。 包括其间的表面区域和凹槽的突起可以在来自光束线组件内的工件的视线范围内面对中性轨迹。 突起可以改变中性轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步减少更敏感的植入物的能量污染。

公开(公告)号：US08421039B2

公开(公告)日：2013-04-16

申请号：US13077329

申请日：2011-03-31

Applicant: Edward C. Eisner

Inventor： Edward C. Eisner

IPC: G21K5/10 ,  H01J3/12

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US08378313B2

公开(公告)日：2013-02-19

申请号：US13077112

申请日：2011-03-31

Applicant: Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC: H01J3/26 ,  H01J37/147

CPC classification number: H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：US20080061228A1

公开(公告)日：2008-03-13

申请号：US11716622

申请日：2007-03-09

Applicant: Bo H. Vanderberg ,  Edward C. Eisner

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: G21K1/093

CPC classification number: H01J37/3171 ,  H01J37/1471 ,  H01J37/1472 ,  H01J2237/24528

Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

公开(公告)号：US08803110B2

公开(公告)日：2014-08-12

申请号：US11541087

申请日：2006-09-29

Applicant: Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

Inventor： Michael A. Graf ,  Edward C. Eisner ,  William F. DiVergilio ,  Daniel R. Tieger

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/32

CPC classification number: H01J37/3233 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32935 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01L21/265

Abstract: Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.

Abstract translation: 通过调整离子源的一个或多个参数，在离子注入期间调整光束电流。 离子束由非电弧放电型离子源（例如电子枪驱动离子源或RF驱动离子源）产生或提供。 确定射束电流调节量。 然后，根据确定的光束电流调节量来调整离子源的一个或多个参数。 提供具有调制束电流的束电流。

公开(公告)号：US20120248326A1

公开(公告)日：2012-10-04

申请号：US13077112

申请日：2011-03-31

Applicant: Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Andy Ray ,  Bo H. Vanderberg

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：US07615763B2

公开(公告)日：2009-11-10

申请号：US11523148

申请日：2006-09-19

Applicant: Bo H. Vanderberg ,  Robert D. Rathmell ,  Edward C. Eisner

Inventor： Bo H. Vanderberg ,  Robert D. Rathmell ,  Edward C. Eisner

IPC: H01J37/317

CPC classification number: H01J37/026 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/055

Abstract: A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.

Abstract translation: 磁扫描仪采用恒定磁场来减轻零场效应。 该扫描器包括上极片和下极片，其在离子束的路径上产生振荡时变磁场并使扫描方向偏转离子束。 一组入口磁体围绕扫描器的入口定位，并且在离子束的路径上产生恒定的入射磁场。 一组出口磁体围绕扫描器的出口定位，并在离子束的路径上产生恒定的出射磁场。

公开(公告)号：US07399980B2

公开(公告)日：2008-07-15

申请号：US11716622

申请日：2007-03-09

Applicant: Bo H. Vanderberg ,  Edward C. Eisner

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/1471 ,  H01J37/1472 ,  H01J2237/24528

Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

Abstract translation: 离子注入系统采用质量分析仪进行质量分析和角度校正。 离子源沿着光束路径产生离子束。 质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。 孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。 分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。 角度测量系统位于分辨孔径的下游，并获得离子束的入射角。 控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。

公开(公告)号：US20080035862A1

公开(公告)日：2008-02-14

申请号：US11503685

申请日：2006-08-14

Applicant: Edward C. Eisner ,  Bo H. Vanderberg

Inventor： Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/1474 ,  H01J37/3023 ,  H01J2237/30488

Abstract: An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed

Abstract translation: 一种离子植入系统，其优化生产率，其包括离子发生器，其被配置为通过沿着第一方向的轴扫描离子将离子注入到工件中;可移动台，被配置为沿大致垂直于所述第一方向的第二方向移动所述工件， 离子检测部件，被配置为测量在工件的大致外边缘处的离子剂量;第一方向驱动器，其接收来自控制器的命令以晶片上的快速扫描速度移动或离开晶片的快速扫描速度;以及第二方向驱动器， 从控制器接收命令，以缓慢的扫描速度移动工件移动台