公开(公告)号：US07180127B2

公开(公告)日：2007-02-20

申请号：US10872052

申请日：2004-06-17

申请人： Bomy Chen ,  Dana Lee

发明人： Bomy Chen ,  Dana Lee

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7885

摘要： A method of forming a floating gate memory cell array, and the array formed thereby, wherein a trench is formed into the surface of a semiconductor substrate. The source and drain regions are formed underneath the trench and along the substrate surface, respectively, with a non-linear channel region therebetween. The floating gate has a lower portion disposed in the trench and an upper portion disposed above the substrate surface and having a lateral protrusion extending parallel to the substrate surface. The lateral protrusion is formed by etching a cavity into an exposed end of a sacrificial layer and filling it with polysilicon. The control gate is formed about the lateral protrusion and is insulated therefrom. The trench sidewall meets the substrate surface at an acute angle to form a sharp edge that points toward the floating gate and in a direction opposite to that of the lateral protrusion.

摘要翻译： 一种形成浮栅存储单元阵列的方法和由此形成的阵列，其中沟槽形成在半导体衬底的表面中。 源极和漏极区分别形成在沟槽下方并且沿着衬底表面，其间具有非线性沟道区。 浮动栅极具有设置在沟槽中的下部和设置在基板表面上方并具有平行于基板表面延伸的横向突起的上部。 横向突起通过将空腔蚀刻到牺牲层的暴露端并用多晶硅填充而形成。 控制门围绕横向突起形成并与其绝缘。 沟槽侧壁以锐角与衬底表面相接触以形成指向浮动栅极并且沿与横向突起的方向相反的方向的尖锐边缘。

公开(公告)号：US06992909B2

公开(公告)日：2006-01-31

申请号：US11157318

申请日：2005-06-20

申请人： Bomy Chen ,  Kai Man Yue ,  Dana Lee ,  Feng Gao

发明人： Bomy Chen ,  Kai Man Yue ,  Dana Lee ,  Feng Gao

IPC分类号： G11C17/00

CPC分类号： H01L27/112 ,  G11C11/5692 ,  G11C17/12 ,  H01L27/1126 ,  H01L27/11266

摘要： A array of multi-bit Read Only Memory (ROM) cells is in a semiconductor substrate of a first conductivity type with a first concentration. Each ROM cell has a first and second regions of a second conductivity type spaced apart from one another in the substrate. A channel is between the first and second regions. The channel has three portions, a first portion, a second portion and a third portion. A gate is spaced apart and is insulated from at least the second portion of the channel. Each ROM cell has one of a plurality of N possible states, where N is greater than 2. The state of each ROM cell is determined by the existence or absence of extensions or halos that are formed in the first portion of the channel and adjacent to the first region and/or in the third portion of the channel adjacent to the second region. These extensions and halos are formed at the same time that extensions or halos are formed in MOS transistors in other parts of the integrated circuit device, thereby reducing cost. The array of ROM cells are arranged in a plurality of rows and columns, with ROM cells in the same row having their gates connected together. ROM cells in the same column have the first regions connected in a common first column, and second regions connected in common second column. Finally, ROM cells in adjacent columns to one side share a common first column, and cells in adjacent columns to another side share a common second column.

摘要翻译： 多位只读存储器（ROM）单元的阵列位于具有第一浓度的第一导电类型的半导体衬底中。 每个ROM单元具有在基板中彼此间隔开的第二导电类型的第一和第二区域。 通道在第一和第二区域之间。 通道具有三个部分，第一部分，第二部分和第三部分。 门间隔开并与通道的至少第二部分绝缘。 每个ROM单元具有多个N个可能状态中的一个，其中N大于2.每个ROM单元的状态由存在或不存在在通道的第一部分中形成并与通道的第一部分相邻 第一区域和/或与第二区域相邻的通道的第三部分。 在集成电路器件的其他部分的MOS晶体管中形成扩展或光晕的同时形成这些扩展和光晕，从而降低成本。 ROM单元的阵列被布置成多个行和列，其中同一行中的ROM单元的门连接在一起。 同一列中的ROM单元具有连接在公共第一列中的第一区域和连接在公共第二列中的第二区域。 最后，一侧的相邻列中的ROM单元共享一个共同的第一列，另一侧的相邻列中的单元格共享第二列。

公开(公告)号：US20050104116A1

公开(公告)日：2005-05-19

申请号：US10714243

申请日：2003-11-13

申请人： Bomy Chen ,  Hieu Tran ,  Dana Lee ,  Jack Frayer

发明人： Bomy Chen ,  Hieu Tran ,  Dana Lee ,  Jack Frayer

IPC分类号： G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788

CPC分类号： H01L27/11521 ,  G11C16/0491 ,  H01L27/115 ,  H01L29/7885

摘要： A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injection from the drain to the floating gate. Erasure occurs by Fowler-Nordheim tunneling of electrons from the floating gate to the control gate. Finally, to increase the density, each cell can be made in a trench.

摘要翻译： 堆叠式非易失性存储器浮栅器件具有控制栅极。 通过从漏极到浮动栅极的热通道电子注入来实现阵列中的单元的编程。 擦除由Fowler-Nordheim发生，电子从浮动栅极隧道到控制门。 最后，为了增加密度，可以在沟槽中制造每个单元。

公开(公告)号：US06806531B1

公开(公告)日：2004-10-19

申请号：US10409248

申请日：2003-04-07

申请人： Bomy Chen ,  Dana Lee ,  Bing Yeh

发明人： Bomy Chen ,  Dana Lee ,  Bing Yeh

IPC分类号： H01L29788

CPC分类号： H01L27/11521 ,  G11C16/0458 ,  G11C16/0475 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42324 ,  H01L29/66825

摘要： A non-volatile memory cell has a single crystalline semiconductive material, such as single crystalline silicon, of a first conductivity type. A first and a second region each of a second conductivity type, different from the first conductivity type, spaced apart from one another is formed in the semiconductive material. A channel region, having a first portion, and a second portion, connects the first and second regions for the conduction of charges. A dielectric is on the channel region. A floating gate, which can be conductive or non-conductive, is on the dielectric, spaced apart from the first portion of the channel region. The first portion of the channel region is adjacent to the first region, with the first floating gate having generally a triangular shape. The floating gate is formed in a cavity. A gate electrode is capacitively coupled to the first floating gate, and is spaced apart from the second portion of the channel region. The second portion of the channel region is between the first portion and the second region. A bi-directional non-volatile memory cell has two floating gates each formed in a cavity. A method of making the non-volatile memory cell and the array are also disclosed.

公开(公告)号：US07358559B2

公开(公告)日：2008-04-15

申请号：US11239791

申请日：2005-09-29

申请人： Felix (Ying-Kit) Tsui ,  Jeng-Wei Yang ,  Bomy Chen ,  Chun-Ming Chen ,  Dana Lee ,  Changyuan Chen

发明人： Felix (Ying-Kit) Tsui ,  Jeng-Wei Yang ,  Bomy Chen ,  Chun-Ming Chen ,  Dana Lee ,  Changyuan Chen

IPC分类号： H01L29/788

CPC分类号： H01L29/7887 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42328 ,  H01L29/42336

摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate. An array of such memory cells comprises rows of cells in active regions adjacent to one another separated from one another by the semiconductive substrate material without any isolation material. Cells in the same column have the source/drain region in common, the drain/source region in common and a first and second control gates in each of the trenches in common. Cells in adjacent columns have the source/drain in common and the first control gate in common.

摘要翻译： 双向读/写非易失性存储单元和阵列能够实现高密度。 每个存储单元具有两个间隔开的浮动栅极，用于在其上存储电荷。 电池具有间隔开的源极/漏极区域，其间具有沟道，沟道具有三个部分。 浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上，栅电极控制第一和第二部分之间的第三部分中的沟道的导通。 控制栅极连接到每个源极/漏极区域，并且还电容耦合到浮动栅极。 通过热通道电子注入的电池程序，并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。 双向读取允许将单元编程为存储位，每个浮动栅极中有一位。 这种存储单元的阵列包括彼此相邻的活性区域中的细胞排，所述活性区域通过没有任何隔离材料的半导体衬底材料彼此分开。 相同列中的单元具有共同的源极/漏极区域，共同的漏极/源极区域以及每个沟槽中的第一和第二控制栅极共同。 相邻列中的单元具有共同的源极/漏极，第一个控制栅极共同。

公开(公告)号：US06927993B2

公开(公告)日：2005-08-09

申请号：US10642079

申请日：2003-08-14

申请人： Bomy Chen ,  Kai Man Yue ,  Dana Lee ,  Feng Gao

发明人： Bomy Chen ,  Kai Man Yue ,  Dana Lee ,  Feng Gao

IPC分类号： G11C11/56 ,  G11C17/00 ,  G11C17/12 ,  H01L21/8236 ,  H01L21/8246 ,  H01L27/112

CPC分类号： H01L27/112 ,  G11C11/5692 ,  G11C17/12 ,  H01L27/1126 ,  H01L27/11266

摘要： A array of multi-bit Read Only Memory (ROM) cells is in a semiconductor substrate of a first conductivity type with a first concentration. Each ROM cell has a first and second regions of a second conductivity type spaced apart from one another in the substrate. A channel is between the first and second regions. The channel has three portions, a first portion, a second portion and a third portion. A gate is spaced apart and is insulated from at least the second portion of the channel. Each ROM cell has one of a plurality of N possible states, where N is greater than 2. The state of each ROM cell is determined by the existence or absence of extensions or halos that are formed in the first portion of the channel and adjacent to the first region and/or in the third portion of the channel adjacent to the second region. These extensions and halos are formed at the same time that extensions or halos are formed in MOS transistors in other parts of the integrated circuit device, thereby reducing cost. The array of ROM cells are arranged in a plurality of rows and columns, with ROM cells in the same row having their gates connected together. ROM cells in the same column have the first regions connected in a common first column, and second regions connected in common second column. Finally, ROM cells in adjacent columns to one side share a common first column, and cells in adjacent columns to another side share a common second column.

摘要翻译： 多位只读存储器（ROM）单元的阵列位于具有第一浓度的第一导电类型的半导体衬底中。 每个ROM单元具有在基板中彼此间隔开的第二导电类型的第一和第二区域。 通道在第一和第二区域之间。 通道具有三个部分，第一部分，第二部分和第三部分。 栅极间隔开并且至少与通道的第二部分绝缘。 每个ROM单元具有多个N个可能状态中的一个，其中N大于2.每个ROM单元的状态由存在或不存在在通道的第一部分中形成并与通道的第一部分相邻 第一区域和/或与第二区域相邻的通道的第三部分。 在集成电路器件的其他部分的MOS晶体管中形成扩展或光晕的同时形成这些扩展和光晕，从而降低成本。 ROM单元的阵列被布置成多个行和列，其中同一行中的ROM单元的门连接在一起。 同一列中的ROM单元具有连接在公共第一列中的第一区域和连接在公共第二列中的第二区域。 最后，一侧的相邻列中的ROM单元共享一个共同的第一列，另一侧的相邻列中的单元格共享第二列。

公开(公告)号：US20050035395A1

公开(公告)日：2005-02-17

申请号：US10642078

申请日：2003-08-14

申请人： Dana Lee ,  Bomy Chen

发明人： Dana Lee ,  Bomy Chen

IPC分类号： G11C11/56 ,  G11C17/12 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/788

CPC分类号： H01L27/11266 ,  G11C11/5692 ,  G11C17/12 ,  H01L27/112

摘要： A array of multi-bit Read Only Memory (ROM) cells is in a semiconductor substrate of a first conductivity type with a first concentration. Each ROM cell has a first and second regions of a second conductivity type spaced apart from one another in the substrate. A channel is between the first and second regions. The channel has three portions, a first portion, a second portion and a third portion. A gate is spaced apart and is insulated from at least the second portion of the channel. Each ROM cell has one of a plurality of N possible states, where N is greater than 2. The state of each ROM cell is determined by the existence or absence of extensions or halos that are formed in the first portion of the channel and adjacent to the first region and/or in the third portion of the channel adjacent to the second region. These extensions and halos are formed at the same time that extensions or halos are formed in MOS transistors in other parts of the integrated circuit device, thereby reducing cost. The array of ROM cells are arranged in a plurality of rows and columns, with ROM cells in the same row having their gates connected together. ROM cells in the same column have the first regions connected in a common first column, and second regions connected in common second column. Finally, ROM cells in adjacent columns to one side share a common first column, and cells in adjacent columns to another side share a common second column.

摘要翻译： 多位只读存储器（ROM）单元的阵列位于具有第一浓度的第一导电类型的半导体衬底中。 每个ROM单元具有在基板中彼此间隔开的第二导电类型的第一和第二区域。 通道在第一和第二区域之间。 通道具有三个部分，第一部分，第二部分和第三部分。 门间隔开并与通道的至少第二部分绝缘。 每个ROM单元具有多个N个可能状态中的一个，其中N大于2.每个ROM单元的状态由存在或不存在在通道的第一部分中形成并与通道的第一部分相邻 第一区域和/或与第二区域相邻的通道的第三部分。 在集成电路器件的其他部分的MOS晶体管中形成扩展或光晕的同时形成这些扩展和光晕，从而降低成本。 ROM单元的阵列被布置成多个行和列，其中同一行中的ROM单元的门连接在一起。 同一列中的ROM单元具有连接在公共第一列中的第一区域和连接在公共第二列中的第二区域。 最后，一侧的相邻列中的ROM单元共享一个共同的第一列，另一侧的相邻列中的单元格共享第二列。

公开(公告)号：US07151021B2

公开(公告)日：2006-12-19

申请号：US11111244

申请日：2005-04-20

申请人： Bomy Chen ,  Jack Frayer ,  Dana Lee

发明人： Bomy Chen ,  Jack Frayer ,  Dana Lee

IPC分类号： H01L21/8238

CPC分类号： H01L27/11521 ,  G11C16/0458 ,  H01L27/115 ,  H01L29/42336 ,  H01L29/7887

摘要： A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.

摘要翻译： 双向读/写非易失性存储单元和阵列能够实现高密度。 每个存储单元具有两个间隔开的浮动栅极，用于在其上存储电荷。 电池具有间隔开的源极/漏极区域，其间具有沟道，沟道具有三个部分。 浮动门之一在第一部分之上; 另一个浮栅位于第二部分之上，栅电极控制第一和第二部分之间的第三部分中的沟道的导通。 控制栅极连接到每个源极/漏极区域，并且还电容耦合到浮动栅极。 通过热通道电子注入的电池程序，并通过Fowler-Nordheim将电子从浮动栅极隧穿到栅电极而擦除。 双向读取允许将单元编程为存储位，每个浮动栅极中有一位。

公开(公告)号：US07050316B1

公开(公告)日：2006-05-23

申请号：US10797207

申请日：2004-03-09

申请人： Ya-Fen Lin ,  Elbert Lin ,  Dana Lee ,  Bomy Chen ,  Hung Q. Nguyen

发明人： Ya-Fen Lin ,  Elbert Lin ,  Dana Lee ,  Bomy Chen ,  Hung Q. Nguyen

IPC分类号： G11C15/00

CPC分类号： G11C15/046 ,  G11C13/0004

摘要： A differential sensing content addressable memory cell without any word lines connected to the cells in the same row comprises a first bit line for supplying a first bit. A first storage element has a first phase change resistor for storing a first stored bit, which is connected in series with a first diode. The first storage element is connected to the first bit line. A second bit line supplies a second bit, with the second bit being an inverse of the first bit. A second storage element has a second phase change resistor for storing a second stored bit, which is connected in series with a second diode. The second storage element is connected to the second bit line. A match line is connected to the first and second storage elements for indicating whether a match occurred between the first bit and the first stored bit, and between the second bit and the second stored bit

摘要翻译： 差分感测内容可寻址存储单元，没有连接到同一行中的单元的任何字线包括用于提供第一位的第一位线。 第一存储元件具有第一相变电阻器，用于存储与第一二极管串联连接的第一存储位。 第一存储元件连接到第一位线。 第二位线提供第二位，第二位是第一位的倒数。 第二存储元件具有用于存储与第二二极管串联连接的第二存储位的第二相变电阻器。 第二存储元件连接到第二位线。 匹配线连接到第一和第二存储元件，用于指示在第一位和第一存储位之间以及第二位和第二存储位之间是否发生匹配

公开(公告)号：US20060091449A1

公开(公告)日：2006-05-04

申请号：US11303567

申请日：2005-12-15

申请人： Bomy Chen ,  Hieu Tran ,  Dana Lee ,  Jack Frayer

发明人： Bomy Chen ,  Hieu Tran ,  Dana Lee ,  Jack Frayer

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  G11C16/0491 ,  H01L27/115 ,  H01L29/7885

摘要： A stacked gate nonvolatile memory floating gate device has a control gate. Programming of the cell in the array is accomplished by hot channel electron injection from the drain to the floating gate. Erasure occurs by Fowler-Nordheim tunneling of electrons from the floating gate to the control gate. Finally, to increase the density, each cell can be made in a trench.

摘要翻译： 堆叠式非易失性存储器浮栅器件具有控制栅极。 通过从漏极到浮动栅极的热通道电子注入来实现阵列中的单元的编程。 擦除由Fowler-Nordheim发生，电子从浮动栅极隧道到控制门。 最后，为了增加密度，可以在沟槽中制造每个单元。