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公开(公告)号：US20130052758A1
公开(公告)日：2013-02-28
申请号：US13217821
申请日：2011-08-25
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译： 讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。 在蚀刻过程中，大块AlN暴露于蚀刻剂。 在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。
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公开(公告)号：US08908161B2
公开(公告)日：2014-12-09
申请号：US13217821
申请日：2011-08-25
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.
摘要翻译： 讨论了从体积AlN上外延生长的一层或多层基本上去除块状氮化铝（AlN）的方法。 在蚀刻过程中，大块AlN暴露于蚀刻剂。 在蚀刻过程中，可以测量体积AlN的厚度并用于控制蚀刻。
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公开(公告)号：US09335262B2
公开(公告)日：2016-05-10
申请号：US13217859
申请日：2011-08-25
IPC分类号： G01N21/41 , H01S5/00 , H01S3/08 , H01L29/06 , H01L21/00 , G02B5/08 , B82Y20/00 , H01S5/183 , H01S5/343
CPC分类号： H01S5/18363 , B82Y20/00 , G01N21/17 , G01N21/41 , G01N2201/0635 , G01N2201/08 , G02B5/0816 , G02B5/085 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S5/34333 , H01S2304/04
摘要： A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.
摘要翻译： 装置包括一个或多个反射器部件。 每个反射器组件包括外延生长反射层的层对和非外延材料（例如空气）的层。 通孔延伸穿过反射器部件的至少一些层。 该装置可以包括发光层。
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公开(公告)号：US09064980B2
公开(公告)日：2015-06-23
申请号：US13217844
申请日：2011-08-25
CPC分类号： H01L33/0079 , H01L2224/48091 , H01L2224/48465 , H01L2224/73257 , Y10T428/24802 , H01L2924/00014
摘要： One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
摘要翻译： 在本体结晶AlN衬底上外延生长一层或多层。 外延层包括作为外延层的外延生长的初始表面的表面。 在外延生长的初始表面的大部分上基本上去除了AlN衬底。
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公开(公告)号：US20130050686A1
公开(公告)日：2013-02-28
申请号：US13217859
申请日：2011-08-25
CPC分类号： H01S5/18363 , B82Y20/00 , G01N21/17 , G01N21/41 , G01N2201/0635 , G01N2201/08 , G02B5/0816 , G02B5/085 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18377 , H01S5/34333 , H01S2304/04
摘要： A device includes one or more reflector components. Each reflector component comprises layer pairs of epitaxially grown reflective layers and layers of a non-epitaxial material, such as air. Vias extend through at least some of the layers of the reflector components. The device may include a light emitting layer.
摘要翻译： 装置包括一个或多个反射器部件。 每个反射器组件包括外延生长反射层的层对和非外延材料（例如空气）的层。 通孔延伸穿过反射器部件的至少一些层。 该装置可以包括发光层。
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公开(公告)号：US20130049005A1
公开(公告)日：2013-02-28
申请号：US13217844
申请日：2011-08-25
CPC分类号： H01L33/0079 , H01L2224/48091 , H01L2224/48465 , H01L2224/73257 , Y10T428/24802 , H01L2924/00014
摘要： One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.
摘要翻译： 在本体结晶AlN衬底上外延生长一层或多层。 外延层包括作为外延层的外延生长的初始表面的表面。 在外延生长的初始表面的大部分上基本上去除了AlN衬底。
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7.发明授权Removable large area, low defect density films for led and laser diode growth 有权用于LED和激光二极管生长的可拆卸大面积，低缺陷密度膜公开(公告)号：US06355497B1
公开(公告)日：2002-03-12
申请号：US09490286
申请日：2000-01-18
申请人： Linda T. Romano , Brent S. Krusor , Christopher L. Chua , Noble M. Johnson , Rose M. Wood , Jack Walker
发明人： Linda T. Romano , Brent S. Krusor , Christopher L. Chua , Noble M. Johnson , Rose M. Wood , Jack Walker
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/02373 , H01L21/0242 , H01L21/02532 , H01L33/0079
摘要： A technique based on etching a release layer, for separating the nearly lattice matched substrate from a base substrate is disclosed. A nearly lattice matched substrate for the epitaxial growth of Group-III nitride semiconductor devices and method of fabricating the nearly lattice matched substrate and devices is disclosed. Enhanced ELOG methods are used to create low defect density GaN films. The GaN films are used to grow Group-III nitride LEDs and laser diodes.
摘要翻译： 公开了一种基于蚀刻释放层的技术，用于将近乎格子匹配的基板与基底基板分离。 公开了用于III族氮化物半导体器件的外延生长的几乎晶格匹配的衬底以及制造近晶格匹配衬底和器件的方法。 增强的ELOG方法用于产生低缺陷密度GaN膜。 GaN薄膜用于生长III族氮化物LED和激光二极管。
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8.发明授权公开(公告)号：US06597717B1
公开(公告)日：2003-07-22
申请号：US09443172
申请日：1999-11-19
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2214 , H01S5/222 , H01S5/2227 , H01S5/2231 , H01S5/34333
摘要： An inner stripe laser diode structure for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding.
摘要翻译： 公开了一种用于GaN激光二极管的内条激光二极管结构。 内部条纹激光二极管结构提供了实现低阈值单模激光二极管的便利手段。 修改内部条纹激光二极管的结构以产生横向折射率引导。
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9.发明授权Release height adjustment of stressy metal devices by annealing before and after release 有权释放压力金属器件释放高度后，退火前后退火公开(公告)号：US06973722B2
公开(公告)日：2005-12-13
申请号：US10715978
申请日：2003-11-17
申请人： Thomas Hantschel , David K. Fork , Dirk De Bruyker , Chinnwen Shih , Jeng Ping Lu , Christopher L. Chua , Raj B. Apte , Brent S. Krusor
发明人： Thomas Hantschel , David K. Fork , Dirk De Bruyker , Chinnwen Shih , Jeng Ping Lu , Christopher L. Chua , Raj B. Apte , Brent S. Krusor
CPC分类号： G01R1/06744 , G01R1/06727 , G01R3/00 , H05K3/4092 , Y10T29/49204 , Y10T29/49208 , Y10T29/49218 , Y10T29/49222
摘要： Spring structures are subjected to pre-release and post-release annealing to tune their tip height to match a specified target. Post-release annealing increases tip height, and pre-release annealing decreases tip height. The amount of tuning is related to the annealing temperature and/or time. Annealing schedules are determined for a pre-fabricated cache of unreleased spring structures such that finished spring structures having a variety of target heights can be economically produced by releasing/annealing the cache according to associated annealing schedules. Selective annealing is performed using lasers and heat absorbing/reflecting materials. Localized annealing is used to generate various spring structure shapes. Both stress-engineered and strain-engineered spring structures are tuned by annealing.
摘要翻译： 弹簧结构经受预释放和后释放退火以调节其尖端高度以匹配指定的靶。 后释放退火增加尖端高度，并且预释放退火使尖端高度降低。 调谐量与退火温度和/或时间有关。 对于未发布的弹簧结构的预制缓存来确定退火计划，使得可以通过根据相关联的退火计划释放/退火高速缓存来经济地产生具有各种目标高度的成品弹簧结构。 使用激光和吸热/反射材料进行选择性退火。 定位退火用于产生各种弹簧结构形状。 应力设计和应变工程弹簧结构都通过退火进行调整。
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公开(公告)号：US08137900B2
公开(公告)日：2012-03-20
申请号：US12120616
申请日：2008-05-14
申请人： Naveen Chopra , Jurgen H. Daniel , Brent S. Krusor , San-Ming Yang , Peter M. Kazmaier , Gabriel Iftime
发明人： Naveen Chopra , Jurgen H. Daniel , Brent S. Krusor , San-Ming Yang , Peter M. Kazmaier , Gabriel Iftime
IPC分类号： G03F7/20
CPC分类号： G02F1/167 , G02F2001/1672
摘要： An electrophoretic display device includes a multiplicity of individual reservoirs containing a display medium between conductive substrates, at least one of which is transparent, wherein the display medium includes one or more set of colored particles in a dielectric fluid, and wherein the multiplicity of individual reservoirs are defined by a unitary grid whose walls segregate the reservoirs. The gird may be formed via photolithography or from a master stamp derived from a mold of the grid pattern.
摘要翻译： 电泳显示装置包括多个单独的储存器，其中包含导电基板之间的显示介质，其中至少一个是透明的，其中显示介质包括介电流体中的一组或多组有色颗粒，并且其中多个单独储存器 由其墙壁隔离储层的单一网格限定。 网格可以通过光刻法或来自网格图案的模具的主印章形成。
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