High-χ block copolymers for directed self-assembly

    公开(公告)号:US11078337B2

    公开(公告)日:2021-08-03

    申请号:US15841472

    申请日:2017-12-14

    Inventor: Daniel Sweat Kui Xu

    Abstract: The present invention is broadly concerned with novel directed self-assembly compositions, processes utilizing those compositions, and the resulting structures that are formed. The composition comprises a block copolymer of polystyrene and a polymethylmethacrylate block with polylactic acid side chains (“PS-b-P(MMA-LA)”). The block copolymer is capable of crosslinking and micro-phase separating into lines and spaces measuring about 10-nm or smaller with sub-20 nm L0 capability. Additionally, PS-b-P(MMA-LA) can be thermally annealed without a top-coat for simpler processing than the prior art. The polylactic acid side chains also increase the etch rate of the poly(methylmethacrylate) block when exposed to oxygen plasma, as well as lower the Tg.

    Gradient block copolymers for directed self-assembly

    公开(公告)号:US10961383B2

    公开(公告)日:2021-03-30

    申请号:US16133051

    申请日:2018-09-17

    Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.

    HIGH-CHI BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY
    4.
    发明申请
    HIGH-CHI BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY 有权
    用于指导自组装的高密度嵌段共聚物

    公开(公告)号:US20150197594A1

    公开(公告)日:2015-07-16

    申请号:US14599103

    申请日:2015-01-16

    Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (χ). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.

    Abstract translation: 提供了用于定向自组装(DSA)图案化技术的组合。 还提供了用于定向自组装的方法,其中将包含嵌段共聚物(BCP)的DSA组合物施加到基材上,然后自组装形成所需图案。 嵌段共聚物包括至少两个嵌段并且被选择为具有高相互作用参数(χ)。 BCP能够通过在中和的基材上进行简单的热退火而形成垂直薄片,而不需要顶涂层。 BCP还能够将微相分离成10nm或更小的线和空间,具有低于20nm的L0能力。

    High-chi block copolymers with tunable glass transition temperatures for directed self-assembly

    公开(公告)号:US10734239B2

    公开(公告)日:2020-08-04

    申请号:US15909751

    申请日:2018-03-01

    Inventor: Kui Xu

    Abstract: Directed self-assembly (DSA) using block copolymers (BCPs) is emerging as a viable alternative to photolithography for creating features 10 nm and smaller. Block copolymers with balanced surface energy between the polymer blocks, tunable χ, and tunable glass transition temperatures (Tg) have been formulated. The block copolymers can achieve perpendicular orientation by simple thermal annealing due to the surface energy balance between the polymer blocks, which allows avoiding solvent annealing or top-coat. The χ value can be tuned up to achieve L0 as low as 12 nm for lamellar-structured BCPs and hole/pillar size as small as 6 nm for cylinder-structured BCPs. The Tg of the BCPs can also be tuned to lower than those of PS-b-PMMA standards. The enhanced polymer chain mobility resulting from the decreased Tg of the block copolymer may help with improving the kinetics of BCP self-assembly during the thermal annealing.

    High-Chi block copolymers for directed self-assembly

    公开(公告)号:US10421878B2

    公开(公告)日:2019-09-24

    申请号:US14599103

    申请日:2015-01-16

    Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer (BCP) is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks and is selected to have a high interaction parameter (χ). The BCPs are able to form perpendicular lamellae by simple thermal annealing on a neutralized substrate, without a top coat. The BCPs are also capable of micro-phase separating into lines and spaces measuring at 10 nm or smaller, with sub-20-nm L0 capability.

    HIGH-CHI BLOCK COPOLYMERS WITH TUNABLE GLASS TRANSITION TEMPERATURES FOR DIRECTED SELF-ASSEMBLY

    公开(公告)号:US20180254189A1

    公开(公告)日:2018-09-06

    申请号:US15909751

    申请日:2018-03-01

    Inventor: Kui Xu

    Abstract: Directed self-assembly (DSA) using block copolymers (BCPs) is emerging as a viable alternative to photolithography for creating features 10 nm and smaller. Block copolymers with balanced surface energy between the polymer blocks, tunable χ, and tunable glass transition temperatures (Tg) have been formulated. The block copolymers can achieve perpendicular orientation by simple thermal annealing due to the surface energy balance between the polymer blocks, which allows avoiding solvent annealing or top-coat. The χ value can be tuned up to achieve L0 as low as 12 nm for lamellar-structured BCPs and hole/pillar size as small as 6 nm for cylinder-structured BCPs. The Tg of the BCPs can also be tuned to lower than those of PS-b-PMMA standards. The enhanced polymer chain mobility resulting from the decreased Tg of the block copolymer may help with improving the kinetics of BCP self-assembly during the thermal annealing.

    HIGH-CHI BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY

    公开(公告)号:US20180163003A1

    公开(公告)日:2018-06-14

    申请号:US15841472

    申请日:2017-12-14

    Inventor: Daniel Sweat Kui Xu

    Abstract: The present invention is broadly concerned with novel directed self-assembly compositions, processes utilizing those compositions, and the resulting structures that are formed. The composition comprises a block copolymer of polystyrene and a polymethylmethacrylate block with polylactic acid side chains (“PS-b-P(MMA-LA)”). The block copolymer is capable of crosslinking and micro-phase separating into lines and spaces measuring about 10-nm or smaller with sub-20 nm L0 capability. Additionally, PS-b-P(MMA-LA) can be thermally annealed without a top-coat for simpler processing than the prior art. The polylactic acid side chains also increase the etch rate of the poly(methylmethacrylate) block when exposed to oxygen plasma, as well as lower the Tg.

    HIGHLY ETCH-RESISTANT POLYMER BLOCK FOR USE IN BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY
    10.
    发明申请
    HIGHLY ETCH-RESISTANT POLYMER BLOCK FOR USE IN BLOCK COPOLYMERS FOR DIRECTED SELF-ASSEMBLY 有权
    用于方向自组装的嵌入式共聚物中的高耐蚀性聚合物嵌段

    公开(公告)号:US20140299969A1

    公开(公告)日:2014-10-09

    申请号:US14242551

    申请日:2014-04-01

    Abstract: Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.

    Abstract translation: 提供了用于定向自组装(DSA)图案化技术的组合。 还提供了用于定向自组装的方法,其中将包含嵌段共聚物的DSA组合物施加到基材上,然后自组装形成所需图案。 嵌段共聚物包括至少两个不同蚀刻速率的嵌段,使得在蚀刻期间选择性地除去一个嵌段(例如聚甲基丙烯酸甲酯)。 因为较慢的蚀刻块(例如,聚苯乙烯)用添加剂进行修饰以进一步降低该块的蚀刻速率,所以较慢的蚀刻块保留在后面以将图案完全转移到下面的层。

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