-
公开(公告)号：US4985621A
公开(公告)日：1991-01-15
申请号：US336109
申请日：1989-04-11
IPC分类号： G02F3/02 , H01L27/15 , H03K17/785
CPC分类号： G02F3/028 , H01L27/15 , H03K17/785
摘要： An electrooptical switch for modulating a bias light beam in response to a control beam. The switch includes a modulator for modulating the bias beam to produce an output light beam therefrom, the modulator having a variable transmissivity; a detector module for receiving the control beam and generating a control signal therefrom, the detector module exhibiting switching operation in response to the control beam; and an amplifier for amplifiying the control signal to modulate the transmissivity of the modulator.
摘要翻译： 一种用于响应于控制光束调制偏光束的电光开关。 开关包括用于调制偏置光束以从其产生输出光束的调制器，调制器具有可变的透射率; 检测器模块，用于接收所述控制光束并从其产生控制信号，所述检测器模块响应于所述控制光束而呈现切换操作; 以及用于放大控制信号以调制调制器的透射率的放大器。
-
2.发明申请SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS 有权用于固态强度图像传感器的单电子检测方法和装置公开(公告)号：US20110233386A1
公开(公告)日：2011-09-29
申请号：US12730037
申请日：2010-03-23
申请人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D. Rathman , Daniel R. Schuette , Brian F. Aull
发明人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D. Rathman , Daniel R. Schuette , Brian F. Aull
IPC分类号： H01L27/148 , H01L31/18 , H01L31/107
CPC分类号： H04N5/378 , H01L31/107 , H01L31/18 , H04N5/355 , H04N5/357 , H04N5/37213
摘要： Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.
摘要翻译： 本发明的实施例包括具有电荷耦合器件（CCD）寄存器的电子计数器，其被配置为将电子转移到可操作地耦合到CCD寄存器的输出的盖革模式雪崩二极管（GM-AD）阵列。 在高电荷电平下，非破坏性放大器检测CCD寄存器输出端的电荷，以提供电荷的模拟指示。 在低电荷水平下，无噪声的电荷分离器或仪表将电荷分成单电子分组，每个分组由GM-AD检测，提供数字输出，指示电子是否存在。 示例电子计数器特别适用于计数由大格式高速成像阵列产生的光电子，因为它们以高动态范围和高灵敏度运行。 因此，它们可以用于在各种各样的光照范围内拍摄场景。
-
公开(公告)号：US08093624B1
公开(公告)日：2012-01-10
申请号：US11354799
申请日：2006-02-15
IPC分类号： H01L31/107
CPC分类号： H01L31/107 , H01L27/1446
摘要： A photodiode is provided by the invention, including an n-type active region and a p-type active region. A first one of the n-type and p-type active regions is disposed in a semiconductor substrate at a first substrate surface. A second one of the n-type and p-type active regions includes a high-field zone disposed beneath the first one of the active regions at a first depth in the substrate, a mid-field zone disposed laterally outward of the first active region at a second depth in the substrate greater than the first depth, and a step zone connecting the high-field zone and the mid-field zone in the substrate.
摘要翻译： 本发明提供一种光电二极管，包括n型有源区和p型有源区。 n型和p型有源区中的第一种被设置在第一衬底表面的半导体衬底中。 n型和p型有源区中的第二个包括设置在衬底中的第一深度处的第一有源区下面的高场区，设置在第一有源区的横向外侧的中场区 在大于第一深度的衬底中的第二深度处，以及连接衬底中的高场区和中场区的阶段区。
-
公开(公告)号：US4848880A
公开(公告)日：1989-07-18
申请号：US120372
申请日：1987-11-13
申请人： Brian F. Aull , William D. Goodhue
发明人： Brian F. Aull , William D. Goodhue
摘要： An electro-optical device for providing spatial modulation of an incoming electromagnetic wave signal, and preferably a two-dimensional incoming signal applied orthogonally to an input plane of the device, which device includes an array of modulation regions for providing such modulation of portions of the incoming signal. An array of first reflective mirrors are positioned so as to direct the incoming electromagnetic wave signal portions through the interaction layer regions of the modulation regions in a direction substantially parallel thereto and an array of second reflective mirrors directs the modulated electromagnetic wave signal portions outwardly from the device to provide a two-dimensional spatially modulated output electromagnetic wave signal.
摘要翻译： 一种用于提供输入电磁波信号的空间调制的电光装置，并且优选地是与装置的输入平面垂直地施加的二维输入信号，该装置包括用于提供对该部分的部分的这种调制的调制区域的阵列 输入信号。 第一反射镜的阵列被定位成引导输入的电磁波信号部分通过基本上平行于其的方向的调制区域的相互作用层区域，并且第二反射镜阵列将调制的电磁波信号部分向外引导 器件提供二维空间调制输出电磁波信号。
-
公开(公告)号：US08426797B2
公开(公告)日：2013-04-23
申请号：US12730048
申请日：2010-03-23
IPC分类号： H03K21/40
CPC分类号： H04N5/37455 , H04N5/355
摘要： Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.
摘要翻译： 本发明的实施例包括用于具有光子计数检测器的光子计数阵列的互补金属氧化物半导体（CMOS）读出结构，阵列中每个感测元件中的数字计数器和溢出位。 通常，光子计数检测器是Geiger模式雪崩光电二极管（APD），每次检测到光子时都会发出短脉冲。 脉冲递增数字计数器，一旦它达到给定的计数，这又会设置溢出位。 可操作地耦合到每个感测元件的滚动读出系统轮询溢出位，并且如果溢出位为高，则启动从溢出位到帧存储的数据传送。 与其他光计数成像仪相比，具有计数器和溢出位的光子计数成像器可以减少传输带宽，高动态范围和精细的空间分辨率。
-
6.发明授权Single-electron detection method and apparatus for solid-state intensity image sensors with a charge-metering device 有权具有电荷计量装置的固态强度图像传感器的单电子检测方法和装置公开(公告)号：US08324554B2
公开(公告)日：2012-12-04
申请号：US12730037
申请日：2010-03-23
申请人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D Rathman , Daniel R. Schuette , Brian F. Aull
发明人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D Rathman , Daniel R. Schuette , Brian F. Aull
IPC分类号： H01L31/00
CPC分类号： H04N5/378 , H01L31/107 , H01L31/18 , H04N5/355 , H04N5/357 , H04N5/37213
摘要： Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.
摘要翻译： 本发明的实施例包括具有电荷耦合器件（CCD）寄存器的电子计数器，其被配置为将电子转移到可操作地耦合到CCD寄存器的输出的盖革模式雪崩二极管（GM-AD）阵列。 在高电荷电平下，非破坏性放大器检测CCD寄存器输出端的电荷，以提供电荷的模拟指示。 在低电荷水平下，无噪声的电荷分离器或仪表将电荷分成单电子分组，每个分组由GM-AD检测，提供数字输出，指示电子是否存在。 示例电子计数器特别适用于计数由大格式高速成像阵列产生的光电子，因为它们具有高动态范围和高灵敏度。 因此，它们可以用于在各种各样的光照范围内拍摄场景。
-
公开(公告)号：US20110235771A1
公开(公告)日：2011-09-29
申请号：US12730048
申请日：2010-03-23
CPC分类号： H04N5/37455 , H04N5/355
摘要： Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.
摘要翻译： 本发明的实施例包括用于具有光子计数检测器的光子计数阵列的互补金属氧化物半导体（CMOS）读出结构，阵列中每个感测元件中的数字计数器和溢出位。 通常，光子计数检测器是Geiger模式雪崩光电二极管（APD），每次检测到光子时都会发出短脉冲。 脉冲递增数字计数器，一旦它达到给定的计数，这又会设置溢出位。 可操作地耦合到每个感测元件的滚动读出系统轮询溢出位，并且如果溢出位为高，则启动从溢出位到帧存储的数据传送。 与其他光计数成像仪相比，具有计数器和溢出位的光子计数成像器可以减少传输带宽，高动态范围和精细的空间分辨率。
-
8.发明授权Digital photon-counting geiger-mode avalanche photodiode solid-state monolithic intensity imaging focal-plane with scalable readout circuitry 有权数字光子计数盖格模式雪崩光电二极管固态单片强度成像焦平面与可扩展读出电路公开(公告)号：US07858917B2
公开(公告)日：2010-12-28
申请号：US10836896
申请日：2004-04-30
申请人： Alvin Stern , Brian F. Aull , Bernard B. Kosicki , Robert K. Reich , Bradley J. Felton , David C. Shaver , Andrew H. Loomis , Douglas J. Young
发明人： Alvin Stern , Brian F. Aull , Bernard B. Kosicki , Robert K. Reich , Bradley J. Felton , David C. Shaver , Andrew H. Loomis , Douglas J. Young
CPC分类号： G01T1/2928
摘要： A photon-counting Geiger-mode avalanche photodiode intensity imaging array includes an array of pixels, each having an avalanche photodiode. A pixel senses an avalanche event and stores, in response to the sensed avalanche event, a single bit digital value therein. An array of accumulators are provided such that each accumulator is associated with a pixel. A row decoder circuit addresses a pixel row within the array of pixels. A bit sensing circuit converts a precharged capacitance into a digital value during read operations.
摘要翻译： 光子计数盖革模式雪崩光电二极管强度成像阵列包括每个具有雪崩光电二极管的像素阵列。 一个像素感测到雪崩事件，并响应于感测到的雪崩事件存储其中的一位数字值。 提供了一组累加器，使得每个累加器与像素相关联。 行解码器电路寻址像素阵列内的像素行。 在读取操作期间，位感测电路将预充电电容转换为数字值。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.025 秒)
