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1.发明授权
公开(公告)号：US5566045A
公开(公告)日：1996-10-15
申请号：US283881
申请日：1994-08-01
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译： 本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如铂36）。 薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。 与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。 薄的非反应性膜可以受益于所使用的材料的优点，同时避免或最小化许多它们的缺点。 薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。 这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。
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公开(公告)号：US5643033A
公开(公告)日：1997-07-01
申请号：US475123
申请日：1995-06-07
CPC分类号： H01J29/327 , H01J29/085 , H01J31/127 , H01J9/2278 , H01J2329/00
摘要： An anode plate 50 for use in a field emission flat panel display device comprises a transparent planar substrate 58 having a plurality of electrically conductive, parallel stripes 52 comprising the anode electrode of the device, which are covered by phosphors 54.sub.R, 54.sub.G and 54.sub.B. A substantially opaque, electrically insulating material 56 is affixed to substrate 58 in the spaces between conductors 52, acting as a barrier to the passage of ambient light into and out of the device. The electrical insulating quality of opaque material 56 increases the electrical isolation of conductive stripes 52 from one another, reducing the risk of breakdown due to increased leakage current. Opaque material 56 preferably comprises glass having impurities dispersed therein, wherein the impurities may include one or more organic dyes, selected to provide relatively uniform opacity over the visible range of the electromagnetic spectrum. Alternatively, the impurities may include the black oxide of a transition metal such as cobalt. Opaque material 56 is formed by mixing a TEOS solution with a dye or a source of metallic ions, spinning or spreading the mixture on glass substrate 58, and curing the mixture to drive out the organics and solvents. Two methods of fabricating anode plate 50 are disclosed.
摘要翻译： 用于场发射平板显示装置的阳极板50包括透明平面基板58，透明平面基板58具有多个导电的平行条52，该平行条52包括被荧光体54R，54G和54B覆盖的该装置的阳极。 基本上不透明的电绝缘材料56被固定到导体52之间的空间中的基底58上，作为环境光通入和流出设备的障碍。 不透明材料56的电绝缘质量增加了导电条52彼此的电隔离，从而降低了由于增加的漏电流而导致的击穿风险。 不透明材料56优选地包括其中分散有杂质的玻璃，其中杂质可以包括一种或多种有机染料，其被选择以在电磁光谱的可见范围内提供相对均匀的不透明度。 或者，杂质可以包括过渡金属如钴的黑色氧化物。 通过将TEOS溶液与染料或金属离子源混合，将混合物旋转或铺展在玻璃基底58上并固化混合物以驱出有机物和溶剂而形成不透明材料56。 公开了制造阳极板50的两种方法。
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3.发明授权
公开(公告)号：US5348894A
公开(公告)日：1994-09-20
申请号：US9521
申请日：1993-01-27
IPC分类号： H01L27/04 , H01L21/02 , H01L21/3205 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01G4/06
CPC分类号： H01L28/75 , H01L21/32051 , H01L28/60 , H01L28/55 , H01L28/56 , Y10S505/818 , Y10T29/435 , Y10T29/49128
摘要： A preferred embodiment of this invention comprises an oxidizable layer (e.g. tantalum 48), an oxygen gettering layer (e.g. platinum/tantalum mixture 34) overlaying the oxidizable layer, a noble metal layer (e.g. platinum 36) overlaying the oxygen gettering layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlaying the noble metal layer. The novel structures presented provide electrical connection to high-dielectric-constant materials without the disadvantages of current structures. The oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the lower electrode or at the lower electrode/substrate interface. The oxygen gettering layer acts as a gettering site for oxygen, where the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides/suboxides (e.g. tantalum pentoxide 40) that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom. This invention provides a stable and electrically conductive electrode for high-dielectric-constant materials while using standard integrated circuit materials to facilitate and economize the manufacturing process.
摘要翻译： 本发明的优选实施方案包括可氧化层（例如钽48），覆盖可氧化层的氧吸气层（例如铂/钽混合物34），覆盖氧吸气层的贵金属层（例如铂36）和 高介电常数材料层（例如钛酸钡锶38）覆盖贵金属层。 所提出的新颖结构提供与高介电常数材料的电连接，而不存在电流结构的缺点。 氧吸气层控制氧气扩散，使下电极或下电极/衬底界面处的电阻层的形成最小化。 吸氧层用作氧的吸除位置，其中氧氧化层的反应性金属部分，使层的贵金属部分保持完整。 虽然形成的氧化物/低氧化物（例如五氧化二钽40）是电阻的，但是它们分散在贵金属基质内，留下从层的顶部到底部的导电路径。 本发明提供一种用于高介电常数材料的稳定且导电的电极，同时使用标准集成电路材料来促进和节约制造工艺。
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4.发明授权High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers 失效包含稀薄二氧化钌层的高介电常数材料电极
公开(公告)号：US5619393A
公开(公告)日：1997-04-08
申请号：US472149
申请日：1995-06-07
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. ruthenium dioxide 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译： 本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如二氧化钌36）。 薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。 与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。 薄的非反应性膜可以受益于所使用的材料的优点，同时避免或最小化许多它们的缺点。 薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。 这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。
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5.发明授权
公开(公告)号：US5581436A
公开(公告)日：1996-12-03
申请号：US482101
申请日：1995-06-07
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive fire can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures my also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译： 本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如铂36）。 薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。 与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。 薄的无反应性火可以从所使用的材料的优点中受益，同时避免或最小化许多它们的缺点。 薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。 这些结构我也可用于多层电容器和其他薄膜铁电器件如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。
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公开(公告)号：US06275370B1
公开(公告)日：2001-08-14
申请号：US09778641
申请日：2001-02-07
IPC分类号： H01G406
摘要： A preferred embodiment of this invention comprises an oxidizable layer (e.g. tantalum 48), an oxygen gettering layer (e.g. platinum/tantalum mixture 34) overlaying the oxidizable layer, a noble metal layer (e.g. platinum 36) overlaying the oxygen gettering layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlaying the noble metal layer. The novel structures presented provide electrical connection to high-dielectric-constant materials without the disadvantages of current structures. The oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the lower electrode or at the lower electrode/substrate interface. The oxygen gettering layer acts as a gettering site for oxygen, where the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides/suboxides (e.g. tantalum pentoxide 40) that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom. This invention provides a stable and electrically conductive electrode for high-dielectric-constant materials while using standard integrated circuit materials to facilitate and economize the manufacturing process.
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公开(公告)号：US06215650B1
公开(公告)日：2001-04-10
申请号：US09521504
申请日：2000-03-09
IPC分类号： H01G406
CPC分类号： H01L28/75 , H01L21/32051 , H01L28/55 , H01L28/56 , H01L28/60 , Y10S505/818 , Y10T29/435 , Y10T29/49128
摘要： A preferred embodiment of this invention includes an oxidizable layer (e.g. tantalum 48), an oxygen gettering layer (e.g. platinum/tantalum mixture 34) overlaying the oxidizable layer, a noble metal layer (e.g. platinum 36) overlaying the oxygen gettering layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlaying the noble metal layer. The novel structures presented provide electrical connection to high-dielectric-constant materials without the disadvantages of current structures. The oxygen gettering layer controls oxygen diffusion, minimizing the formation of a resistive layer either in the lower electrode or at the lower electrode/substrate interface. The oxygen gettering layer acts as a gettering site for oxygen, where the oxygen oxidizes the reactive metal portion of the layer, leaving the noble metal portion of the layer intact. While the oxides/suboxides (e.g. tantalum pentoxide 40) that are formed are resistive, they are dispersed within the noble metal matrix, leaving a conductive path from the top of the layer to the bottom. This invention provides a stable and electrically conductive electrode for high-dielectric-constant materials while using standard integrated circuit materials to facilitate and economize the manufacturing process.
摘要翻译： 本发明的优选实施方案包括可氧化层（例如钽48），覆盖可氧化层的氧吸气层（例如铂/钽混合物34），覆盖氧吸气层的贵金属层（例如铂36）和 高介电常数材料层（例如钛酸钡锶38）覆盖贵金属层。 所提出的新颖结构提供与高介电常数材料的电连接，而不存在电流结构的缺点。 氧吸气层控制氧气扩散，使下电极或下电极/衬底界面处的电阻层的形成最小化。 吸氧层用作氧的吸除位置，其中氧氧化层的反应性金属部分，使层的贵金属部分保持完整。 虽然形成的氧化物/低氧化物（例如五氧化二钽40）是电阻的，但是它们分散在贵金属基质内，留下从层的顶部到底部的导电路径。 本发明提供一种用于高介电常数材料的稳定且导电的电极，同时使用标准集成电路材料来促进和节约制造工艺。
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8.发明授权
公开(公告)号：US5576928A
公开(公告)日：1996-11-19
申请号：US475121
申请日：1995-06-07
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g. palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译： 本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如铂36）。 薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。 与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。 薄的非反应性膜可以受益于所使用的材料的优点，同时避免或最小化许多它们的缺点。 薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。 这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。
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9.发明授权Anode plate with opaque insulating material for use in a field emission display 失效具有不透明绝缘材料的阳极板，用于场致发射显示
公开(公告)号：US5528102A
公开(公告)日：1996-06-18
申请号：US491747
申请日：1995-06-19
CPC分类号： H01J29/327 , H01J29/085 , H01J31/127 , H01J9/2278 , H01J2329/00
摘要： An anode plate 50 for use in a field emission flat panel display device comprises a transparent planar substrate 58 having a plurality of electrically conductive, parallel stripes 52 comprising the anode electrode of the device, which are covered by phosphors 54.sub.R, 54.sub.G and 54.sub.B. A substantially opaque, electrically insulating material 56 is affixed to substrate 58 in the spaces between conductors 52, acting as a barrier to the passage of ambient light into and out of the device. The electrical insulating quality of opaque material 56 increases the electrical isolation of conductive stripes 52 from one another, reducing the risk of breakdown due to increased leakage current. Opaque material 56 preferably comprises glass having impurities dispersed therein, wherein the impurities may include one or more organic dyes, selected to provide relatively uniform opacity over the visible range of the electromagnetic spectrum. Alternatively, the impurities may include the black oxide of a transition metal such as cobalt. Opaque material 56 is formed by mixing a TEOS solution with a dye or a source of metallic ions, spinning or spreading the mixture on glass substrate 58, and curing the mixture to drive out the organics and solvents. Two methods of fabricating anode plate 50 are disclosed.
摘要翻译： 用于场发射平板显示装置的阳极板50包括透明平面基板58，透明平面基板58具有多个导电的平行条52，该平行条52包括被荧光体54R，54G和54B覆盖的该装置的阳极。 基本上不透明的电绝缘材料56被固定到导体52之间的空间中的基底58上，作为环境光通入和流出设备的障碍。 不透明材料56的电绝缘质量增加了导电条52彼此的电隔离，从而降低了由于增加的漏电流而导致的击穿风险。 不透明材料56优选地包括其中分散有杂质的玻璃，其中杂质可以包括一种或多种有机染料，其被选择以在电磁光谱的可见范围内提供相对均匀的不透明度。 或者，杂质可以包括过渡金属如钴的黑色氧化物。 通过将TEOS溶液与染料或金属离子源混合，将混合物旋转或铺展在玻璃基底58上并固化混合物以驱出有机物和溶剂而形成不透明材料56。 公开了制造阳极板50的两种方法。
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公开(公告)号：US08779485B2
公开(公告)日：2014-07-15
申请号：US13480044
申请日：2012-05-24
IPC分类号： H01L21/02 , H01L23/48 , H01L21/768 , H01L49/02 , H01L27/115
CPC分类号： H01L21/76843 , H01L27/11509 , H01L28/57
摘要： An integrated circuit containing a FeCap array. The FeCap array is at least partially surrounded on the sides by hydrogen barrier walls and on the top by a hydrogen barrier top plate. A method for at least partially enclosing a FeCap array with hydrogen barrier walls and a hydrogen barrier top plate.
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