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    Method for manufacturing a film bulk acoustic resonator
    2.
    发明授权
    Method for manufacturing a film bulk acoustic resonator 有权
    薄膜体声共振器的制造方法

    公开(公告)号：US07793395B2

    公开(公告)日：2010-09-14

    申请号：US11687734

    申请日：2007-03-19

    申请人： Byeoung-ju Ha ,  Yun-kwon Park ,  In-sang Song ,  Il-jong Song ,  Jong-seok Kim ,  Duck-hwan Kim ,  Jun-sik Hwang

    发明人： Byeoung-ju Ha ,  Yun-kwon Park ,  In-sang Song ,  Il-jong Song ,  Jong-seok Kim ,  Duck-hwan Kim ,  Jun-sik Hwang

    IPC分类号： H01L41/22 ,  H01L41/00

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

    摘要： A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

    摘要翻译： 一种薄膜体声波谐振器及其制造方法。 薄膜体声波谐振器包括基板，气相沉积在基板上的保护层，气相沉积在保护层上并距离基板的上侧预定距离的膜，以及气相沉积在 膜。 此外，制造方法包括在基板上气相沉积膜，在膜的两侧形成保护层，在膜上气相沉积层叠的共振部分，并且通过去除设置在膜之间的基板的一部分来形成气隙 保护层。 因此，膜可以以简单的结构形成并且没有应力，并且整个制造过程被简化。

    FILM BULK ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    FILM BULK ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME 有权
    电影胶卷声谐振器及其制造方法

    公开(公告)号：US20070157442A1

    公开(公告)日：2007-07-12

    申请号：US11687734

    申请日：2007-03-19

    申请人： Byeoung-ju HA ,  Yun-kwon Park ,  In-sang Song ,  Il-jong Song ,  Jong-seok Kim ,  Duck-hwan Kim ,  Jun-sik Hwang

    发明人： Byeoung-ju HA ,  Yun-kwon Park ,  In-sang Song ,  Il-jong Song ,  Jong-seok Kim ,  Duck-hwan Kim ,  Jun-sik Hwang

    IPC分类号： H04R17/00 ,  B05D5/12

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H2003/021 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

    摘要： A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

    摘要翻译： 一种薄膜体声波谐振器及其制造方法。 薄膜体声波谐振器包括基板，气相沉积在基板上的保护层，气相沉积在保护层上并距离基板的上侧预定距离的膜，以及气相沉积在 膜。 此外，制造方法包括在基板上气相沉积膜，在膜的两侧形成保护层，在膜上气相沉积层叠的共振部分，并且通过去除设置在膜之间的基板的一部分来形成气隙 保护层。 因此，膜可以以简单的结构形成并且没有应力，并且整个制造过程被简化。

    Air-gap type FBAR, and duplexer using the FBAR
    5.
    发明授权
    Air-gap type FBAR, and duplexer using the FBAR 失效
    气隙式FBAR和双工器使用FBAR

    公开(公告)号：US07233218B2

    公开(公告)日：2007-06-19

    申请号：US11429256

    申请日：2006-05-08

    申请人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    IPC分类号： H03H9/70 ,  H03H9/15 ,  H03H9/10 ,  H03H9/54

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。 当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。 谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

    Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate
    6.
    发明授权
    Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate 有权
    气隙式FBAR和双工器的制造方法，包括将谐振部分基板固定到腔形成基板

    公开(公告)号：US07053730B2

    公开(公告)日：2006-05-30

    申请号：US10825608

    申请日：2004-04-16

    申请人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    IPC分类号： H03H9/70 ,  H03H3/007 ,  H03H9/10

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。 当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。 谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

    Air-gap type FBAR, and duplexer using the FBAR
    7.
    发明申请
    Air-gap type FBAR, and duplexer using the FBAR 失效
    气隙式FBAR和双工器使用FBAR

    公开(公告)号：US20060214745A1

    公开(公告)日：2006-09-28

    申请号：US11429256

    申请日：2006-05-08

    申请人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    IPC分类号： H03H9/70 ,  H03H9/58

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。 当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。 谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

    Film bulk acoustic resonator having supports and manufacturing method therefore
    8.
    发明授权
    Film bulk acoustic resonator having supports and manufacturing method therefore 有权
    因此，具有支撑体和制造方法的膜体声谐振器

    公开(公告)号：US07095298B2

    公开(公告)日：2006-08-22

    申请号：US10854793

    申请日：2004-05-27

    申请人： Il-jong Song ,  Duck-hwan Kim ,  In-sang Song ,  Yun-kwon Park ,  Byeoung-ju Ha

    发明人： Il-jong Song ,  Duck-hwan Kim ,  In-sang Song ,  Yun-kwon Park ,  Byeoung-ju Ha

    IPC分类号： H03H9/54 ,  H03H3/02

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/0514 ,  H03H9/0547 ,  Y10T29/42

    摘要： A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.

    摘要翻译： 薄膜体声波谐振器（FBAR）具有支撑结构，压电谐振器和信号线，其全部在半导体衬底上，例如通过通孔电连接到压电谐振器。 支撑件和/或通孔将压电谐振器安装在离半导体衬底预定距离处，从而实现谐振器的理想形状。 信号线可以包括图案化电感器。 可以在通孔和信号线之间形成电容器。 由于由于由预定距离形成的气隙可以防止由共振器的驱动引起的衬底损耗，所以可以提高谐振特性。 可以通过改变电感器的图案，电容器的电容和/或压电层的厚度来调节谐振频率，并且可以容易地实现阻抗匹配。

    Film bulk acoustic resonator having supports and manufacturing method therefore
    9.
    发明申请
    Film bulk acoustic resonator having supports and manufacturing method therefore 有权
    因此，具有支撑体和制造方法的膜体声谐振器

    公开(公告)号：US20050012571A1

    公开(公告)日：2005-01-20

    申请号：US10854793

    申请日：2004-05-27

    申请人： Il-jong Song ,  Duck-hwan Kim ,  In-sang Song ,  Yun-kwon Park ,  Byeoung-ju Ha

    发明人： Il-jong Song ,  Duck-hwan Kim ,  In-sang Song ,  Yun-kwon Park ,  Byeoung-ju Ha

    IPC分类号： H01L41/08 ,  H01L41/22 ,  H01L41/29 ,  H01L41/311 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/15 ,  H03H9/17 ,  H03H9/54

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/0514 ,  H03H9/0547 ,  Y10T29/42

    摘要： A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.

    摘要翻译： 薄膜体声波谐振器（FBAR）具有支撑结构，压电谐振器和信号线，其全部在半导体衬底上，例如通过通孔电连接到压电谐振器。 支撑件和/或通孔将压电谐振器安装在离半导体衬底预定距离处，从而实现谐振器的理想形状。 信号线可以包括图案化电感器。 可以在通孔和信号线之间形成电容器。 由于由于由预定距离形成的气隙可以防止由共振器的驱动引起的衬底损耗，所以可以提高谐振特性。 可以通过改变电感器的图案，电容器的电容和/或压电层的厚度来调节谐振频率，并且可以容易地实现阻抗匹配。