Method for manufacturing a film bulk acoustic resonator
    1.
    发明授权
    Method for manufacturing a film bulk acoustic resonator 有权
    薄膜体声共振器的制造方法

    公开(公告)号:US07793395B2

    公开(公告)日:2010-09-14

    申请号:US11687734

    申请日:2007-03-19

    IPC分类号: H01L41/22 H01L41/00

    摘要: A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

    摘要翻译: 一种薄膜体声波谐振器及其制造方法。 薄膜体声波谐振器包括基板,气相沉积在基板上的保护层,气相沉积在保护层上并距离基板的上侧预定距离的膜,以及气相沉积在 膜。 此外,制造方法包括在基板上气相沉积膜,在膜的两侧形成保护层,在膜上气相沉积层叠的共振部分,并且通过去除设置在膜之间的基板的一部分来形成气隙 保护层。 因此,膜可以以简单的结构形成并且没有应力,并且整个制造过程被简化。

    FILM BULK ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    FILM BULK ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME 有权
    电影胶卷声谐振器及其制造方法

    公开(公告)号:US20070157442A1

    公开(公告)日:2007-07-12

    申请号:US11687734

    申请日:2007-03-19

    IPC分类号: H04R17/00 B05D5/12

    摘要: A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

    摘要翻译: 一种薄膜体声波谐振器及其制造方法。 薄膜体声波谐振器包括基板,气相沉积在基板上的保护层,气相沉积在保护层上并距离基板的上侧预定距离的膜,以及气相沉积在 膜。 此外,制造方法包括在基板上气相沉积膜,在膜的两侧形成保护层,在膜上气相沉积层叠的共振部分,并且通过去除设置在膜之间的基板的一部分来形成气隙 保护层。 因此,膜可以以简单的结构形成并且没有应力,并且整个制造过程被简化。

    Monolithic RF filter
    6.
    发明授权
    Monolithic RF filter 有权
    单片RF滤波器

    公开(公告)号:US07535322B2

    公开(公告)日:2009-05-19

    申请号:US11269844

    申请日:2005-11-09

    IPC分类号: H03H9/54 H03H9/56

    摘要: A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.

    摘要翻译: 由膜体声波谐振器形成的滤波器具有能够将调谐电感器制造在与谐振器阵列相同的衬底上的拓扑结构。 整个滤波器可以在单个芯片上制造,仅利用集成电路工艺。 在示例性实施例中,一对并联谐振器各自具有连接到串联谐振器的一个电极。 两个并联谐振器的其他电极彼此共同连接。 微调电感连接在公共电极和地电位之间。 第三并联谐振器连接在串联谐振器和地电位之间。

    Filter comprising inductor, duplexer using the filter and fabricating methods thereof
    7.
    发明授权
    Filter comprising inductor, duplexer using the filter and fabricating methods thereof 有权
    滤波器包括使用滤波器的电感器,双工器及其制造方法

    公开(公告)号:US07250831B2

    公开(公告)日:2007-07-31

    申请号:US11130156

    申请日:2005-05-17

    IPC分类号: H03H9/70 H03H9/54

    摘要: A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

    摘要翻译: 提供了使用气隙型膜体声波谐振器的滤波器。 本发明的滤光器包括:基板,其上形成有第一端口,第二端口和接地端口,以连接到外部端子; 将所述第一端口与所述基板上的所述第二端口串联连接的至少一个第一膜体声波谐振器; 至少一个第二膜体声波谐振器并联连接到形成在第一端口和第二端口之间的互连节点; 以及将第二膜体声波谐振器串联连接到接地端口的至少一个电感器。 包括在滤波器中的电感器由第一和第二膜体声波谐振器制成为一体。 因此,可以通过简化的过程制造小尺寸的过滤器。

    Air-gap type thin-film bulk acoustic resonator and fabrication method therefor
    9.
    发明授权
    Air-gap type thin-film bulk acoustic resonator and fabrication method therefor 有权
    气隙型薄膜体声波谐振器及其制造方法

    公开(公告)号:US07253705B2

    公开(公告)日:2007-08-07

    申请号:US11130157

    申请日:2005-05-17

    IPC分类号: H03H9/15 H03H3/02 H03H9/54

    摘要: An air-gap type thin-film bulk acoustic resonator. The air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.

    摘要翻译: 气隙式薄膜体声共振器。 气隙型薄膜体声波谐振器具有形成在其上表面的预定部分上的空腔的基板; 具有第一电极,压电体和第二电极的结构的共振部分,其依次沉积并形成在空腔的上侧; 以及穿过基板的下表面并连接到空腔的至少一个通孔。