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    Optical recording material and optical recording medium using same
    1.
    发明授权
    Optical recording material and optical recording medium using same 有权
    光记录材料和使用其的光记录介质

    公开(公告)号：US06753059B2

    公开(公告)日：2004-06-22

    申请号：US10138232

    申请日：2002-05-01

    申请人： Byung-ki Cheong ,  Soon-Gwang Kim ,  Won-Mok Kim ,  Taek-Sung Lee ,  Sung-Jin Park ,  Tae-Yon Lee ,  Ki-Bum Kim

    发明人： Byung-ki Cheong ,  Soon-Gwang Kim ,  Won-Mok Kim ,  Taek-Sung Lee ,  Sung-Jin Park ,  Tae-Yon Lee ,  Ki-Bum Kim

    IPC分类号： B32B302

    CPC分类号： G11B7/2433 ,  G11B7/2531 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10T428/21

    摘要： Disclosed in this invention is a phase change optical recording material for a rewritable recording medium with a high speed crystallization and excellent erasibility, which comprises a composition having the formula of: (AaBbCc)x(GeaSbbTec)1−x wherein, A is an element selected from the elements belonging to the IVB group in the periodic table; B is an element selected from the elements belonging to the VB group in the periodic table; C is an element selected from the elements belonging to the VIB group in the periodic table; a, b and c are atomic ratios; x is a mole fraction in the range of 0 to 1; and at least one of A, B and C has a higher atomic number and thus a smaller diatomic bond strength than that of the corresponding element in the GeSbTe part.

    摘要翻译： 本发明公开了一种用于具有高速结晶和优异的可擦除性的可重写记录介质的相变光学记录材料，其包括具有下式的组合物：其中，A是选自属于IVB基团的元素的元素 周期表; B是从属于周期表中的VB组的元素中选择的元素; C是从属于周期表中的VIB基的元素中选出的元素; a，b和c是原子比; x是0至1范围内的摩尔分数; 并且A，B和C中的至少一个具有比GeSbTe部分中的相应元素更高的原子数，因此具有更小的双原子键强度。

    Multi-level phase change random access memory device
    4.
    发明申请
    Multi-level phase change random access memory device 有权
    多级相变随机存取存储器件

    公开(公告)号：US20100012913A1

    公开(公告)日：2010-01-21

    申请号：US12459155

    申请日：2009-06-26

    申请人： Tae-Yon Lee

    发明人： Tae-Yon Lee

    IPC分类号： H01L47/00

    CPC分类号： H01L45/00 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004

    摘要： A multi-level phase change random access memory device includes a first electrode, a second electrode, and a phase change material disposed between the first electrode and the second electrode. The multi-level phase change random access memory device also includes a variable bias source coupled to the first electrode. The variable bias source provides a respective bias applied at the first electrode to form a portion of the phase change material to have one of an amorphous state and different crystal states for storing multi-bits data.

    摘要翻译： 多级相变随机存取存储器件包括第一电极，第二电极和设置在第一电极和第二电极之间的相变材料。 多电平相变随机存取存储器件还包括耦合到第一电极的可变偏置源。 可变偏置源提供施加在第一电极处的相应偏置，以形成相变材料的一部分以具有用于存储多位数据的非晶状态和不同晶体状态之一。

    IMAGE-SENSING DEVICES AND METHODS OF OPERATING THE SAME
    7.
    发明申请
    IMAGE-SENSING DEVICES AND METHODS OF OPERATING THE SAME 有权
    图像感测装置及其操作方法

    公开(公告)号：US20130020463A1

    公开(公告)日：2013-01-24

    申请号：US13550838

    申请日：2012-07-17

    申请人： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

    发明人： Tae-Yon Lee ,  Yoon-Dong Park ,  Yong-Jei Lee ,  Seoung-Hyun Kim ,  Joo-Yeong Gong ,  Sung-Kwon Hong

    IPC分类号： G01J1/44

    CPC分类号： H04N5/357 ,  H04N5/3696 ,  H04N5/3745 ,  H04N5/378

    摘要： In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.

    摘要翻译： 在操作图像传感器的方法中，在对浮动扩散区域施加复位电压之后，对浮动扩散区域的噪声电压进行采样。 在对噪声电压进行采样之后，存储光电荷的存储区域与浮动扩散区域电连接，并且在存储区域和浮动扩散区域电气化之后对浮动扩散区域的解调电压进行采样， 连接的。 基于噪声电压和解调电压确定电压。