公开(公告)号：US09899217B2

公开(公告)日：2018-02-20

申请号：US14555897

申请日：2014-11-28

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  STMICROELECTRONICS SA

发明人： Shay Reboh ,  Yves Morand ,  Hubert Moriceau

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/84 ,  H01L29/10 ,  H01L21/265 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/02689 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/26506 ,  H01L21/7624 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/7847 ,  H01L29/78654 ,  H01L29/78684

摘要： A method is provided for producing a microelectronic device provided with different strained areas in a superficial layer of a semi-conductor on insulator type substrate, including amorphizing a region of the superficial layer and then a lateral recrystallization of the region from crystalline areas adjoining the region.

公开(公告)号：US09246006B2

公开(公告)日：2016-01-26

申请号：US14453800

申请日：2014-08-07

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  STMICROELECTRONICS SA

发明人： Perrine Batude ,  Frederic Mazen ,  Benoit Sklenard ,  Shay Reboh

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L21/265 ,  H01L21/324 ,  H01L29/66 ,  H01L29/10

CPC分类号： H01L29/78603 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/324 ,  H01L29/1045 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78654

摘要： A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.

摘要翻译： 根据设置在绝缘体上半导体衬底的绝缘层上的晶体半导体材料，通过一个或多个局部注入，提供源极和漏极区域的给定区域的非晶化和掺杂的晶体管的制造方法， 进行注入以便在非晶半导体材料的区域上在晶体半导体材料的所述块区的表面上保存; 以及所述给定区域的至少一部分的重结晶。

公开(公告)号：US20150179474A1

公开(公告)日：2015-06-25

申请号：US14575329

申请日：2014-12-18

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Sylvain MAITREJEAN ,  Shay Reboh ,  Romain Wacquez

IPC分类号： H01L21/324 ,  H01L29/78 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L21/324 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/26506 ,  H01L29/7847

摘要： Method for modifying the strain state of a block of a semiconducting material comprising steps for: making a lower region of a block of semiconducting material resting on a substrate amorphous, while the crystalline structure of an upper region of the block in contact with the lower region is maintained, making a creep annealing with a sufficient thermal budget to enable creep of the lower region without recrystallizing the material of this lower region, making a recrystallization annealing of the lower region.

摘要翻译： 用于修改半导体材料块的应变状态的方法，包括以下步骤：使半导体材料块的下部区域保持在非晶态的衬底上，同时块的上部区域的结晶结构与下部区域接触 ，进行具有足够的热预算的蠕变退火，以使下部区域的蠕变不会使该下部区域的材料再结晶，从而进行下部区域的再结晶退火。

公开(公告)号：US09761607B2

公开(公告)日：2017-09-12

申请号：US14579069

申请日：2014-12-22

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Shay Reboh ,  Perrine Batude ,  Sylvain Maitrejean ,  Frederic Mazen

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/306 ,  H01L29/04 ,  H01L29/78 ,  H01L21/84 ,  H01L21/762 ,  H01L27/092 ,  H01L21/265 ,  H01L21/8238

CPC分类号： H01L27/1203 ,  H01L21/02115 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L29/04 ,  H01L29/7843 ,  H01L29/7847

摘要： A method for producing a microelectronic device is provided, including forming on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone configured to induce a compressive strain in the first block and a second semi-conductor block covered with a second strain zone configured to induce a tensile strain in the second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of the strain zones; and recrystallizing the lower region of the first and second blocks while using the upper region of crystalline material as starting zone for a recrystallization front.

公开(公告)号：US10014183B2

公开(公告)日：2018-07-03

申请号：US15523742

申请日：2015-11-09

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS SA

发明人： Shay Reboh ,  Laurent Grenouillet ,  Yves Morand

IPC分类号： H01L21/308 ,  H01L21/311 ,  H01L27/12

CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L27/1203

摘要： A method for producing at least one pattern in a layer resting on a substrate, including: a) making amorphous at least one first block of an upper layer of crystalline material resting on a first amorphous supporting layer, while the crystalline structure of a second block of the upper layer that adjoins and is juxtaposed with the first block is preserved; b) partially recrystallizing the first block by using at least one side surface of the second block that is in contact with the first block as an area for the start of a recrystallization front, the partial recrystallization being carried out to preserve a region of amorphous material in the first block; c) selectively etching the amorphous material of the upper layer with respect to the crystalline material of the upper layer to form at least one first pattern in the upper layer.