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公开(公告)号：US20130164442A1
公开(公告)日：2013-06-27
申请号：US13712211
申请日：2012-12-12
Inventor： Stephan LANDIS , Berangere Hyot
IPC: B29C59/02
CPC classification number: G03F7/0002 , B82Y10/00 , B82Y40/00
Abstract: The present invention relates to a method for manufacturing a nanoimprint lithography mold. The method comprises an initial step of depositing, on a mechanical support, a layer of a phase-changing material having a volume variation of at least 2% between a crystalline phase and an amorphous phase. The method is characterized in that it also comprises a step of personalization of the mold, achieved by making the layer of phase-changing material transition locally from its crystalline phase to its amorphous phase in order to form relief patterns therein.The invention comprises such a mold as well as a method for modifying such a mold.
Abstract translation: 本发明涉及一种纳米压印光刻模的制造方法。 该方法包括在机械支撑件上沉积在结晶相和非晶相之间具有至少2％的体积变化的相变材料层的初始步骤。 该方法的特征还在于它还包括通过使相变层从其结晶相局部转变成其非晶相而实现的模具的个性化步骤，以便在其中形成浮雕图案。 本发明包括这种模具以及用于修改这种模具的方法。
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公开(公告)号：US20170372904A1
公开(公告)日：2017-12-28
申请号：US15538564
申请日：2015-12-22
Inventor： Stephan LANDIS , Nicolas POSSEME , Sebastien BARNOLA , Thibaut DAVID , Lamia NOURI
IPC: H01L21/266 , C23C14/04 , C23C14/48 , H01L21/306 , H01L21/3065 , H01L33/22 , G03F7/00 , H01L31/0392 , H01L31/18 , H01L33/00 , B81C1/00
CPC classification number: H01L21/266 , B81C1/00103 , B81C1/0046 , B81C1/00587 , B81C2201/0136 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , C23C14/042 , C23C14/48 , G03F7/0002 , H01L21/30604 , H01L21/30608 , H01L21/3065 , H01L21/3086 , H01L21/31111 , H01L21/31144 , H01L31/02363 , H01L31/0392 , H01L31/1852 , H01L33/007 , H01L33/20 , H01L33/22 , Y02E10/50
Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.
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公开(公告)号：US20180001582A1
公开(公告)日：2018-01-04
申请号：US15538594
申请日：2015-12-22
Inventor： Nicolas POSSEME , Stephan LANDIS , Lamia NOURI
IPC: B29D11/00 , G03F7/00 , G02B3/02 , C23C14/04 , B81C1/00 , C23C14/58 , C23C14/48 , H01L21/768 , G02B3/00
CPC classification number: B29D11/00365 , B81B2203/0376 , B81C1/00103 , B81C1/0046 , B81C99/009 , B81C2201/0133 , B81C2201/0136 , C23C14/042 , C23C14/48 , C23C14/5853 , C23C14/5873 , G02B3/0025 , G02B3/0031 , G02B3/02 , G03F7/0002 , H01L21/3065 , H01L21/308 , H01L21/31111 , H01L21/31116 , H01L21/76804 , H01L21/76817
Abstract: The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.
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公开(公告)号：US20170363954A1
公开(公告)日：2017-12-21
申请号：US15538526
申请日：2015-12-22
Inventor： Stephan LANDIS , Nicolas POSSEME , Lamia NOURI
CPC classification number: H01L21/266 , B81C1/00103 , B81C1/0046 , B81C1/00587 , B81C2201/0136 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , C23C14/042 , C23C14/48 , G03F7/0002 , H01L21/30604 , H01L21/30608 , H01L21/3065 , H01L21/3086 , H01L21/31111 , H01L21/31144 , H01L31/02363 , H01L31/0392 , H01L31/1852 , H01L33/007 , H01L33/20 , H01L33/22 , Y02E10/50
Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.
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