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公开(公告)号：US20150376460A1
公开(公告)日：2015-12-31
申请号：US14750050
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh , Daniel Clingerman
IPC: C09G1/02
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.
Abstract translation: 用于制造化学机械抛光组合物的方法包括在包括氨基硅烷化合物的液体中生长胶体二氧化硅磨料颗粒，使得氨基硅烷化合物掺入磨料颗粒中。 可以进一步处理包括这种胶体二氧化硅磨料颗粒的分散体，以获得包含其中并入氨基硅烷化合物的胶体二氧化硅颗粒的化学机械抛光组合物。
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公开(公告)号：US20150376458A1
公开(公告)日：2015-12-31
申请号：US14749923
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh
IPC: C09G1/02
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.
Abstract translation: 化学 - 机械抛光组合物包括分散在pH在约1.5至约7范围内的液体载体中的胶体二氧化硅磨料颗粒。胶体二氧化硅磨料颗粒包括掺入其中的氨基硅烷化合物或鏻硅烷化合物。 组合物可用于抛光包括硅氧材料如TEOS的基材。
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公开(公告)号：US10124464B2
公开(公告)日：2018-11-13
申请号：US14919404
申请日：2015-10-21
Applicant: Cabot Microelectronics Corporation
Inventor： Mary Cavanaugh , Steven Kraft , Andrew Wolff , Phillip W. Carter , Elise Sikma , Jeffrey Cross , Benjamin Petro
Abstract: The invention provides methods of inhibiting corrosion of a substrate containing metal. The substrate can be in any suitable form. In some embodiments, the metal is cobalt. The methods can be used with semiconductor wafers in some embodiments. The invention also provides chemical-mechanical polishing compositions and methods of polishing a substrate. A corrosion inhibitor can be used in the methods and compositions disclosed herein. The inhibitor comprises an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, an amino acid derivative, a phosphate ester, an isethionate, a sulfate, a sulfosuccinate, a sulfocinnimate, or any combination thereof.
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公开(公告)号：US20150376461A1
公开(公告)日：2015-12-31
申请号：US14750107
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh
IPC: C09G1/02
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.
Abstract translation: 化学机械抛光浓缩物包含至少10重量％的分散在pH在约1.5至约7范围内的液体载体中的胶态二氧化硅磨料颗粒。胶体二氧化硅磨料包括氨基硅烷化合物或掺入鏻硅烷化合物 其中。 在使用之前，浓缩物可以用至少3份水/份浓缩物稀释。
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公开(公告)号：US09803106B2
公开(公告)日：2017-10-31
申请号：US14750050
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh , Daniel Clingerman
IPC: C09G1/02 , C09G1/06 , B24B37/04 , B24B1/00 , C09G1/00 , C09G1/04 , C09K3/14 , H01L21/306 , H01L21/321 , H01L21/3105
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.
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Patent Agency Ranking
公开(公告)号：US20160107289A1
公开(公告)日：2016-04-21
申请号：US14919404
申请日：2015-10-21
Applicant: Cabot Microelectronics Corporation
Inventor： Mary Cavanaugh , Steven Kraft , Andrew Wolff , Phillip W. Carter , Elise Sikma , Jeffrey Cross
CPC classification number: B24B37/24 , C09D5/08 , C09G1/02 , C23F3/04 , C23F3/06 , C23F11/10 , H01L21/3212
Abstract: The invention provides methods of inhibiting corrosion of a substrate containing metal. The substrate can be in any suitable form. In some embodiments, the metal is cobalt. The methods can be used with semiconductor wafers in some embodiments. The invention also provides chemical-mechanical polishing compositions and methods of polishing a substrate. A corrosion inhibitor can be used in the methods and compositions disclosed herein. The inhibitor comprises an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, an amino acid derivative, a phosphate ester, an isethionate, a sulfate, a sulfosuccinate, a sulfocinnimate, or any combination thereof.
Abstract translation: 本发明提供了抑制含金属基材腐蚀的方法。 底物可以是任何合适的形式。 在一些实施方案中，金属是钴。 在一些实施例中，该方法可以与半导体晶片一起使用。 本发明还提供化学机械抛光组合物和抛光基材的方法。 腐蚀抑制剂可用于本文公开的方法和组合物中。 抑制剂包括两性表面活性剂，磺酸盐，膦酸盐，羧酸盐，氨基酸衍生物，磷酸酯，羟乙基磺酸盐，硫酸盐，磺基琥珀酸盐，sulfocinnimate或其任何组合。
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公开(公告)号：US20150376459A1
公开(公告)日：2015-12-31
申请号：US14749948
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh
IPC: C09G1/02
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.
Abstract translation: 化学机械抛光组合物包括分散在液体载体中的胶态二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒包括掺入其中的含氮或含磷化合物，使得颗粒具有正电荷。 组合物可用于抛光包括硅氧材料如TEOS的基材。
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公开(公告)号：US09499721B2
公开(公告)日：2016-11-22
申请号：US14749948
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh
IPC: B44C1/22 , C09G1/02 , B24B1/00 , C09G1/00 , C09G1/04 , C09K3/14 , H01L21/306 , H01L21/321 , H01L21/3105
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.
Abstract translation: 化学机械抛光组合物包括分散在液体载体中的胶体二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒包括掺入其中的含氮或含磷化合物，使得颗粒具有正电荷。 组合物可用于抛光包括硅氧材料如TEOS的基材。
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公开(公告)号：US09422457B2
公开(公告)日：2016-08-23
申请号：US14750107
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh
IPC: C09G1/02 , B24B1/00 , C09G1/00 , C09G1/04 , C09K3/14 , H01L21/306 , H01L21/321 , H01L21/3105
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.
Abstract translation: 化学机械抛光浓缩物包含至少10重量％的分散在pH在约1.5至约7范围内的液体载体中的胶态二氧化硅磨料颗粒。胶体二氧化硅磨料包括氨基硅烷化合物或掺入鏻硅烷化合物 其中。 在使用之前，浓缩物可以用至少3份水/份浓缩物稀释。
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公开(公告)号：US09422456B2
公开(公告)日：2016-08-23
申请号：US14749923
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Steven Grumbine , Jeffrey Dysard , Ernest Shen , Mary Cavanaugh
IPC: C09G1/02 , B24B1/00 , C09G1/00 , C09G1/04 , C09K3/14 , H01L21/306 , H01L21/321 , H01L21/3105
CPC classification number: C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1436 , C09K3/1454 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.
Abstract translation: 化学 - 机械抛光组合物包括分散在pH在约1.5至约7范围内的液体载体中的胶体二氧化硅磨料颗粒。胶体二氧化硅磨料颗粒包括掺入其中的氨基硅烷化合物或鏻硅烷化合物。 组合物可用于抛光包括硅氧材料如TEOS的基材。
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