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公开(公告)号：US06951823B2
公开(公告)日：2005-10-04
申请号：US10638570
申请日：2003-08-11
IPC分类号： G03F7/42 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02071 , G03F7/427 , H01J2237/3342 , H01L21/31138
摘要： A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
摘要翻译： 在半导体衬底存在低k材料的情况下，基本上无氧的无氮等离子体灰化处理用于去除光致抗蚀剂包括通过将等离子体气体组合物暴露于能量源形成等离子体来形成反应性物质。 等离子体气体组成基本上不含氧气和含氮气体。 通过将光致抗蚀剂暴露于基本上无氧和无氮的反应性物质，等离子体通过含有低k材料的下面的基底选择性地除去光致抗蚀剂。 该方法可与含碳低k电介质材料一起使用。
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公开(公告)号：US06630406B2
公开(公告)日：2003-10-07
申请号：US09855177
申请日：2001-05-14
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01J2237/3342 , H01L21/31138
摘要： An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.
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公开(公告)号：US20060141806A1
公开(公告)日：2006-06-29
申请号：US11155525
申请日：2005-06-17
申请人： Carlo Waldfried , Christopher Garmer , Orlando Escorcia , Ivan Berry , Palani Sakthivel , Alan Janos
发明人： Carlo Waldfried , Christopher Garmer , Orlando Escorcia , Ivan Berry , Palani Sakthivel , Alan Janos
CPC分类号： H01L21/02348 , H01L21/02334 , H01L21/312 , H01L21/324 , Y10S134/902
摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.
摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。
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公开(公告)号：US07709814B2
公开(公告)日：2010-05-04
申请号：US11155525
申请日：2005-06-17
申请人： Carlo Waldfried , Christopher Garmer , Orlando Escorcia , Ivan Berry, III , Palani Sakthivel , Alan C. Janos
发明人： Carlo Waldfried , Christopher Garmer , Orlando Escorcia , Ivan Berry, III , Palani Sakthivel , Alan C. Janos
IPC分类号： G21K5/00
CPC分类号： H01L21/02348 , H01L21/02334 , H01L21/312 , H01L21/324 , Y10S134/902
摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.
摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。
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公开(公告)号：US06548416B2
公开(公告)日：2003-04-15
申请号：US09911682
申请日：2001-07-24
申请人： Qingyuan Han , Ivan Berry , Palani Sakthivel , Carlo Waldfried
发明人： Qingyuan Han , Ivan Berry , Palani Sakthivel , Carlo Waldfried
IPC分类号： H01L21302
CPC分类号： H01J37/32357 , G03F7/427 , H01J2237/3342 , H01L21/31138
摘要： A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and/or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.
摘要翻译： 用于从半导体衬底选择性地灰化光致抗蚀剂和/或后蚀刻残余物的等离子体灰化处理和装置包括在比处理室压力大至少2乇的压力下在等离子体产生区域中产生还原离子密度等离子体; 并将其上具有光致抗蚀剂和/或后蚀刻残余物的晶片表面暴露于还原的离子密度等离子体，以从表面选择性地除去光致抗蚀剂和/或后蚀刻残留物，并使表面基本上与将底物暴露于还原 离子密度等离子体。
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公开(公告)号：US06281135B1
公开(公告)日：2001-08-28
申请号：US09368553
申请日：1999-08-05
申请人： Qingyuan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mammoud Dahimene
发明人： Qingyuan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mammoud Dahimene
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , G03F7/427 , H01J37/32192 , H01J37/32357 , H01J2237/3342 , H01L21/02063 , H01L21/31138 , H01L21/76813 , Y10S438/963
摘要： A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles, The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.
摘要翻译： 在存在或不存在铜时，从半导体晶片的暴露的低k电介质层剥离光刻胶和/或去除后蚀刻残留物的方法。 该方法包括通过使无氧气体经受能量源产生具有电中性和带电粒子的等离子体来产生无氧等离子体。然后从等离子体中选择性地除去带电粒子。 电中性颗粒与光致抗蚀剂和/或后蚀刻残余物反应以形成挥发性气体，然后通过气流从晶片中除去。 用于剥离光致抗蚀剂和/或后蚀刻残余物的无氧等离子体气体组合物包括含氢气体和氟轴承，其中含氟气体小于总气体组成的约10体积％。
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公开(公告)号：US06492186B1
公开(公告)日：2002-12-10
申请号：US09434617
申请日：1999-11-05
申请人： Qingyan Han , Palani Sakthivel , Ricky Ruffin , Andre Cardoso
发明人： Qingyan Han , Palani Sakthivel , Ricky Ruffin , Andre Cardoso
IPC分类号： H01L2100
CPC分类号： H01J37/32935 , G01N21/68 , G03F7/427 , H01J37/32963 , H01J2237/3342 , H01L21/02071 , H01L21/31138
摘要： A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387 nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387 nm, an indication that the photoresist and/or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358 nm and 431 nm can also be monitored for determining the endpoint.
摘要翻译： 一种用于确定用于半导体晶片处理中的无氧等离子体剥离工艺的端点的方法。 该方法包括激发含有氮气和反应气体的气体组合物以形成无氧等离子体。 无氧等离子体与其上具有光致抗蚀剂和/或残留物的基底反应以产生对应于无氧反应产物的发射光信号。 通过在约387nm的波长下光学测量无氧反应产物的主要发射信号来确定终点。 当等离子体不再与基板上的光致抗蚀剂和/或残余物反应以在约387nm处产生发射的光，这表明光致抗蚀剂和/或残余物已经从晶片去除时，确定端点。 在358nm和431nm处的无氧反应产物的二次发射信号也可以被监测以确定终点。
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公开(公告)号：US06638875B2
公开(公告)日：2003-10-28
申请号：US09876318
申请日：2001-06-07
申请人： Qingyan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mahmoud Dahimene
发明人： Qingyan Han , Ivan Berry , Palani Sakthivel , Ricky Ruffin , Mahmoud Dahimene
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , G03F7/427 , H01J37/32192 , H01J37/32357 , H01J2237/3342 , H01L21/02063 , H01L21/31138 , H01L21/76813 , Y10S438/963
摘要： A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.
摘要翻译： 在存在或不存在铜时，从半导体晶片的暴露的低k电介质层剥离光刻胶和/或去除后蚀刻残留物的方法。 该方法包括通过使无氧气体经受能量源产生具有电中性和带电粒子的等离子体来产生无氧等离子体。 然后将带电粒子从等离子体中选择性地除去。 电中性颗粒与光致抗蚀剂和/或后蚀刻残余物反应以形成挥发性气体，然后通过气流从晶片中除去。 用于剥离光致抗蚀剂和/或后蚀刻残余物的无氧等离子体气体组合物包括含氢气体和氟轴承，其中含氟气体小于总气体组成的约10体积％。
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公开(公告)号：US06524936B2
公开(公告)日：2003-02-25
申请号：US09742721
申请日：2000-12-22
IPC分类号： H01L21425
摘要： A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.
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