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    Plasma ashing process
    2.
    发明授权
    Plasma ashing process 有权
    等离子体灰化过程

    公开(公告)号：US06951823B2

    公开(公告)日：2005-10-04

    申请号：US10638570

    申请日：2003-08-11

    申请人： Carlo Waldfried ,  Orlando Escorcia ,  Qingyuan Han ,  Thomas Buckley ,  Palani Sakthivel

    发明人： Carlo Waldfried ,  Orlando Escorcia ,  Qingyuan Han ,  Thomas Buckley ,  Palani Sakthivel

    IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/02071 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31138

    摘要： A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.

    摘要翻译： 在半导体衬底存在低k材料的情况下，基本上无氧的无氮等离子体灰化处理用于去除光致抗蚀剂包括通过将等离子体气体组合物暴露于能量源形成等离子体来形成反应性物质。 等离子体气体组成基本上不含氧气和含氮气体。 通过将光致抗蚀剂暴露于基本上无氧和无氮的反应性物质，等离子体通过含有低k材料的下面的基底选择性地除去光致抗蚀剂。 该方法可与含碳低k电介质材料一起使用。

    Apparatus and process for treating dielectric materials
    3.
    发明申请
    Apparatus and process for treating dielectric materials 失效
    用于处理电介质材料的设备和工艺

    公开(公告)号：US20060141806A1

    公开(公告)日：2006-06-29

    申请号：US11155525

    申请日：2005-06-17

    申请人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

    发明人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

    IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L21/26

    CPC分类号： H01L21/02348 ,  H01L21/02334 ,  H01L21/312 ,  H01L21/324 ,  Y10S134/902

    摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

    摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。

    Apparatus and process for treating dielectric materials
    4.
    发明授权
    Apparatus and process for treating dielectric materials 失效
    用于处理电介质材料的设备和工艺

    公开(公告)号：US07709814B2

    公开(公告)日：2010-05-04

    申请号：US11155525

    申请日：2005-06-17

    申请人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry, III ,  Palani Sakthivel ,  Alan C. Janos

    发明人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry, III ,  Palani Sakthivel ,  Alan C. Janos

    IPC分类号： G21K5/00

    CPC分类号： H01L21/02348 ,  H01L21/02334 ,  H01L21/312 ,  H01L21/324 ,  Y10S134/902

    摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

    摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。

    Plasma ashing process
    5.
    发明授权
    Plasma ashing process 有权
    等离子体灰化过程

    公开(公告)号：US06548416B2

    公开(公告)日：2003-04-15

    申请号：US09911682

    申请日：2001-07-24

    申请人： Qingyuan Han ,  Ivan Berry ,  Palani Sakthivel ,  Carlo Waldfried

    发明人： Qingyuan Han ,  Ivan Berry ,  Palani Sakthivel ,  Carlo Waldfried

    IPC分类号： H01L21302

    CPC分类号： H01J37/32357 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31138

    摘要： A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and/or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.

    摘要翻译： 用于从半导体衬底选择性地灰化光致抗蚀剂和/或后蚀刻残余物的等离子体灰化处理和装置包括在比处理室压力大至少2乇的压力下在等离子体产生区域中产生还原离子密度等离子体; 并将其上具有光致抗蚀剂和/或后蚀刻残余物的晶片表面暴露于还原的离子密度等离子体，以从表面选择性地除去光致抗蚀剂和/或后蚀刻残留物，并使表面基本上与将底物暴露于还原 离子密度等离子体。

    Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics
    7.
    发明授权
    Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics 失效
    用于形成多孔低k电介质的紫外辅助致孔剂去除和/或固化方法

    公开(公告)号：US07629272B2

    公开(公告)日：2009-12-08

    申请号：US11146742

    申请日：2005-06-07

    申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry, III

    发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry, III

    IPC分类号： H01L21/31

    CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/31695 ,  H01L21/76825 ,  H01L2221/1047

    摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

    摘要翻译： 从含有致孔剂材料的低k电介质膜形成多孔低k电介质材料的方法包括将低k电介质膜暴露于紫外线辐射。 在一个实施方案中，将薄膜暴露于小于240nm的宽带紫外线辐射一段时间和强度以有效去除致孔剂材料。 在其他实施例中，低k电介质膜暴露于有效地增加膜基质的交联密度的第一紫外线辐射图，同时在暴露于第一紫外线辐射图之前和之后保持致孔剂材料的浓度基本相同。 然后可以处理低k电介质膜以在其中形成金属互连结构，随后暴露于有效从低k电介质膜去除致孔剂材料并形成多孔低k电介质膜的第二紫外线图案。

    Plasma curing of MSQ-based porous low-k film materials
    8.
    发明授权
    Plasma curing of MSQ-based porous low-k film materials 失效
    基于MSQ的多孔低k薄膜材料的等离子体固化

    公开(公告)号：US06759098B2

    公开(公告)日：2004-07-06

    申请号：US09906276

    申请日：2001-07-16

    申请人： Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

    发明人： Qingyuan Han ,  Carlo Waldfried ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Jeff Jang ,  Ian Ball

    IPC分类号： B05D302

    CPC分类号： C01B33/126 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/31695

    摘要： Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.

    摘要翻译： 具有改善弹性模量的低介电常数薄膜材料。 制造这种膜材料的方法包括提供由含有至少2个Si-CH 3基团的树脂分子制备的多孔甲基倍半硅氧烷基介电膜材料和等离子体固化多孔膜材料以将膜转化为多孔二氧化硅。 多孔膜材料的等离子体固化产生具有改进的模量和除气性质的膜。 弹性模量的改善通常大于或约100％，更典型地大于或约200％。 等离子体固化的多孔膜材料可以任选地退火。 与等离子体固化的多孔膜材料相比，等离子体固化膜的退火可以降低膜的介电常数，同时保持改善的弹性模量。 退火的等离子体固化膜的介电常数介于约1.1和约2.4之间，弹性模量提高。

    Fluorine-free plasma curing process for porous low-k materials
    9.
    发明授权
    Fluorine-free plasma curing process for porous low-k materials 失效
    用于多孔低k材料的无氟等离子体固化工艺

    公开(公告)号：US07011868B2

    公开(公告)日：2006-03-14

    申请号：US10627894

    申请日：2003-07-24

    申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Atsushi Shiota

    发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ralph Albano ,  Ivan L. Berry, III ,  Atsushi Shiota

    IPC分类号： C08J7/18 ,  H01L21/26 ,  H01L21/3105 ,  H01L21/314 ,  H05L1/24

    CPC分类号： H01L21/3105 ,  C01B33/126 ,  C23C16/56 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3124 ,  H01L21/31695 ,  Y10T428/31663

    摘要： Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims 37 CFR §1.72(b).

    摘要翻译： 低介电常数多孔材料具有改善的弹性模量和材料硬度。 制造这种多孔材料的过程包括提供多孔电介质材料，并用无氟等离子体气体等离子体固化多孔介电材料，以产生无氟等离子体固化的多孔电介质材料。 多孔电介质材料的无氟等离子体固化产生具有改善的模量和材料硬度以及相当的介电常数的材料。 弹性模量的改善通常大于或约50％，更典型地大于或约100％。 材料硬度的改善通常大于或约50％。 要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求37 CFR§1.72（b）的范围或含义。