公开(公告)号：US06524936B2

公开(公告)日：2003-02-25

申请号：US09742721

申请日：2000-12-22

申请人： John Scott Hallock ,  Alan Frederick Becknell ,  Palani Sakthivel

发明人： John Scott Hallock ,  Alan Frederick Becknell ,  Palani Sakthivel

IPC分类号： H01L21425

CPC分类号： G03F7/42 ,  G03F7/427

摘要： A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.

公开(公告)号：US5981147A

公开(公告)日：1999-11-09

申请号：US835873

申请日：1997-04-08

申请人： John Scott Hallock ,  Alan Frederick Becknell ,  Cynthia Louise Ebner ,  Daniel Joseph Hart

发明人： John Scott Hallock ,  Alan Frederick Becknell ,  Cynthia Louise Ebner ,  Daniel Joseph Hart

IPC分类号： C09D4/00 ,  C09D4/02 ,  C09D4/06 ,  G03F7/004 ,  G03F7/027 ,  G03F7/031 ,  G03F7/033 ,  H05K3/00 ,  H05K3/06 ,  H05K3/18

CPC分类号： G03F7/033 ,  G03F7/0048 ,  H05K3/0076

摘要： Disclosed are waterborne, stable photoresist compositions and methods of their preparation and use. The compositions are characterized by increased shear and storage stability. The photoresist composition comprises an aqueous emulsion of a 22% or less neutralized carboxylated resin and non-ionic surfactant containing poly(ethylene-oxide) segments, photopolymerizable monomer and photoinitiator. Neutralization is accomplished using either an organic or an inorganic base or mixtures thereof. The photoresist compositions are useful to selectively coat and protect surfaces subjected to corrosive environments, e.g., etchant processes, in the production of circuit traces for electronic circuit boards.

摘要翻译： 公开了水性，稳定的光致抗蚀剂组合物及其制备和使用方法。 组合物的特征在于增加的剪切和储存稳定性。 光致抗蚀剂组合物包含22％或更少中和的羧化树脂和含有聚（环氧乙烷）链段的非离子表面活性剂，光聚合单体和光引发剂的水性乳液。 使用有机或无机碱或其混合物完成中和。 光致抗蚀剂组合物可用于在电子电路板的电路迹线的生产中选择性地涂覆和保护经受腐蚀环境（例如蚀刻剂工艺）的表面。

公开(公告)号：US08580076B2

公开(公告)日：2013-11-12

申请号：US10249962

申请日：2003-05-22

申请人： Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree, Jr. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

发明人： Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree, Jr. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/505 ,  C23C16/511

CPC分类号： H01J37/32357 ,  H01J37/3244 ,  H01J37/32844 ,  Y02C20/30

摘要： A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

摘要翻译： 等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。