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    Resonator
    1.
    发明授权
    Resonator 有权
    谐振器

    公开(公告)号：US08294534B2

    公开(公告)日：2012-10-23

    申请号：US12888185

    申请日：2010-09-22

    申请人： Casper van der Avoort ,  Jozef Thomas Martinus Van Beek ,  Johannes van Wingerden ,  Joep Bontemps ,  Robert James Pascoe Lander

    发明人： Casper van der Avoort ,  Jozef Thomas Martinus Van Beek ,  Johannes van Wingerden ,  Joep Bontemps ,  Robert James Pascoe Lander

    IPC分类号： H03H9/02 ,  H01L21/00

    CPC分类号： H03H9/02448 ,  H03H3/0076 ,  H03H9/2447 ,  H03H9/2473 ,  H03H9/2489

    摘要： A resonator comprising a beam formed from a first material having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and a second material having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient at least within operating conditions of the resonator, wherein the ratio of the cross sectional area of the first material to the cross sectional area of the second material varies along the length of the beam, the cross sectional areas being measured substantially perpendicularly to the beam.

    摘要翻译： 一种谐振器，包括由具有第一杨氏模量和第一杨氏模量的第一温度系数的第一材料形成的梁，以及具有第二杨氏模量和第二杨氏模量的第二温度系数的第二材料， 所述第二温度系数至少在所述谐振器的操作条件下与所述第一温度系数的符号相反，其中所述第一材料的横截面积与所述第二材料的横截面面积的比率沿着所述梁的长度变化 横截面面积基本上垂直于梁测量。

    Method for creating a pattern in a material and semiconductor structure processed therewith
    6.
    发明授权
    Method for creating a pattern in a material and semiconductor structure processed therewith 有权
    用于在其中处理的材料和半导体结构中形成图案的方法

    公开(公告)号：US07361453B2

    公开(公告)日：2008-04-22

    申请号：US11081797

    申请日：2005-03-15

    申请人： Greja Johanna Adriana Maria Verheijden ,  Pascal Henri Leon Bancken ,  Johannes van Wingerden

    发明人： Greja Johanna Adriana Maria Verheijden ,  Pascal Henri Leon Bancken ,  Johannes van Wingerden

    IPC分类号： G03F7/00

    CPC分类号： G03F7/0035 ,  G03F7/095 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144

    摘要： A method of manufacturing a semiconductor device with precision patterning is disclosed. A structure of a small dimension is created in a material, such as a semiconductor material, using a first and a second pattern, the patterns being identical but displaced over a distance with respect to each other. Two mask layers are used, wherein the first pattern is etched into the upper mask layer with a selective etch, and the second pattern is created on the upper mask layer or on the lower mask layer at locations where the upper mask layer has been removed. A part of the lower mask layer and/or the upper mask layer is etched according to the second pattern, resulting in a mask formed by remaining parts of the lower and upper mask layers, the mask having a structure with a dimension determined by a displacement of the second pattern with respect to the first pattern.

    摘要翻译： 公开了一种制造精密图案化的半导体器件的方法。 使用第一和第二图案的材料（例如半导体材料）中产生小尺寸的结构，所述图案相同但相对于彼此间隔一定距离。 使用两个掩模层，其中通过选择性蚀刻将第一图案蚀刻到上掩模层中，并且在去除上掩模层的位置处，在上掩模层或下掩模层上形成第二图案。 根据第二图案蚀刻下掩模层和/或上掩模层的一部分，得到由下掩模层和上掩模层的剩余部分形成的掩模，掩模具有由位移确定的尺寸的结构 的第二图案相对于第一图案。