Removable pellicle for immersion lithography
    1.
    发明授权
    Removable pellicle for immersion lithography 有权
    浸没光刻用可拆卸防护薄膜

    公开(公告)号:US08067147B2

    公开(公告)日:2011-11-29

    申请号:US10596647

    申请日:2004-12-22

    IPC分类号: G03F7/00

    CPC分类号: G03F7/70341 G03F7/70983

    摘要: A method of irradiating to pattern a photosensitive layer such as a resist (L2) immersed in a fluid (L3), involves applying a removable transparent layer (L4, L5), projecting the radiation onto the resist through the immersion fluid and through the transparent layer, such that imperfections in the fluid are out of focus as projected on the surface, and subsequently removing the transparent layer. The transparent layer can help distance such imperfections from the focus of the radiation on the surface and so can reduce or eliminate shadowing. Hence the irradiation can be more complete, and defects reduced. It can be particularly effective for imperfections in the form of small bubbles or particles in the immersion fluid especially at the fluid/surface interface for example. The radiation can be for any purpose including inspection, processing, patterning and so on. The removal of the transparent layer can be combined with a step of developing the resist layer.

    摘要翻译: 一种照射方法来照射浸没在流体(L3)中的抗蚀剂(L2)的感光层,包括施加可去除的透明层(L4,L5),通过浸没流体将辐射投射到抗蚀剂上,并通过透明 使得流体中的缺陷如投射在表面上而失焦,随后去除透明层。 透明层可以帮助将这种缺陷从辐射的焦点远离在表面上,因此可以减少或消除阴影。 因此,照射可以更完整,并且缺陷减少。 对于浸入液体中的小气泡或颗粒形式的缺陷,特别是在流体/表面界面处的缺陷可能特别有效。 辐射可以用于任何目的,包括检查,加工,图案化等。 可以将透明层的去除与显影抗蚀剂层的步骤组合。

    RESONATOR
    2.
    发明申请
    RESONATOR 有权
    谐振器

    公开(公告)号:US20110127625A1

    公开(公告)日:2011-06-02

    申请号:US12888185

    申请日:2010-09-22

    IPC分类号: H01L29/84 H01L21/30

    摘要: A resonator comprising a beam formed from a first material having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and a second material having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient at least within operating conditions of the resonator, wherein the ratio of the cross sectional area of the first material to the cross sectional area of the second material varies along the length of the beam, the cross sectional areas being measured substantially perpendicularly to the beam.

    摘要翻译: 一种谐振器,包括由具有第一杨氏模量和第一杨氏模量的第一温度系数的第一材料形成的梁,以及具有第二杨氏模量和第二杨氏模量的第二温度系数的第二材料, 所述第二温度系数至少在所述谐振器的操作条件下与所述第一温度系数的符号相反,其中所述第一材料的横截面积与所述第二材料的横截面面积的比率沿着所述梁的长度变化 横截面面积基本上垂直于梁测量。

    Determning lithographic parameters to optimise a process window
    8.
    发明申请
    Determning lithographic parameters to optimise a process window 审中-公开
    确定光刻参数以优化工艺窗口

    公开(公告)号:US20060206851A1

    公开(公告)日:2006-09-14

    申请号:US10540068

    申请日:2003-12-18

    IPC分类号: G06F17/50

    摘要: For determining best process variables (E, F, W) setting that provide optimum process window for a lithographic process for printing features having critical dimensions (CD) use is made of an overall performance characterizing parameter (Cpk) and of an analytical model, which describes CD data as a function of process parameters, like exposure dose (E) and focus (F). This allows calculating of the average value (μCD) and the variance (σCD) of the statistical CD distribution (CDd) and to determine the highest Cpk value and the associated values of process parameters, which values provide the optimum process window.

    摘要翻译: 为了确定为光刻工艺提供最佳工艺窗口的最佳工艺变量(E,F,W)设置,用于打印具有关键尺寸(CD)的特征,使用总体性能特性参数(C> pk< )和分析模型,其描述作为过程参数的函数的CD数据,如曝光剂量(E)和焦点(F)。 这允许计算统计CD分布(CDd)的平均值(muCD)和方差(sigmaCD),并确定最高的C max值和过程参数的相关值,这些值提供 最佳过程窗口。

    Lithographic method of manufacturing a device
    10.
    发明授权
    Lithographic method of manufacturing a device 有权
    制造器件的平版印刷方法

    公开(公告)号:US07659041B2

    公开(公告)日:2010-02-09

    申请号:US11367810

    申请日:2006-03-01

    IPC分类号: G03F1/00 G03C5/00

    摘要: For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.

    摘要翻译: 为了光刻制造具有非常高密度的器件,通过新的方法将设计掩模图案(120)分布在多个子图案(120a,120b,120c)上。 子图案不包括“禁止”结构(135)并且可以通过常规设备传送到待图案化的基底层。 为了传送,使用新的层叠层,其包括用于每个子图案的一对处理层(22; 26)和无机抗反射层(24; 28)。 在第一处理层(26)已经被图案化为第一子图案之后,其被涂覆有用第二子图案曝光的新抗蚀剂层(30)和在第一子图案下方的第二处理层(22) 用第二子图案处理处理层。