Effect of substrate surface treatment on 193 NM resist processing
    1.
    发明授权
    Effect of substrate surface treatment on 193 NM resist processing 失效
    衬底表面处理对193 NM抗蚀剂加工的影响

    公开(公告)号:US06746973B1

    公开(公告)日:2004-06-08

    申请号:US10212985

    申请日:2002-08-05

    IPC分类号: H01L21302

    摘要: One aspect of the present invention relates to a system and method for mitigating surface abnormalities on a semiconductor structure. The method involves exposing the layer to a first plasma treatment in order to mitigate surface interactions between the layer and a subsequently formed photoresist without substantially etching the layer, the first plasma comprising oxygen and nitrogen; forming a patterned photoresist over the treated layer, the patterned photoresist being formed using 193 nm or lower radiation; and etching the treated layer through openings of the patterned photoresist. The system and method also includes a monitor processor for determining whether the plasma treatment has been administered and for adjusting the plasma treatment components. The monitor processor transmits a pulse, receives a reflected pulse response and analyzes the response. An optional second plasma treatment comprising nitrogen and hydrogen may be administered after the first plasma treatment but before forming the photoresist.

    摘要翻译: 本发明的一个方面涉及一种用于减轻半导体结构上的表面异常的系统和方法。 该方法包括将层暴露于第一等离子体处理,以便减轻层与随后形成的光致抗蚀剂之间的表面相互作用,而基本上不蚀刻该层,第一等离子体包含氧和氮; 在处理的层上形成图案化的光致抗蚀剂,使用193nm或更低的辐射形成图案化的光致抗蚀剂; 并通过图案化光致抗蚀剂的开口蚀刻处理层。 该系统和方法还包括用于确定等离子体处理是否已被施用并用于调整等离子体处理组件的监视器处理器。 监视器处理器发送脉冲,接收反射的脉冲响应并分析响应。 包括氮和氢的任选的第二等离子体处理可以在第一等离子体处理之后但在形成光致抗蚀剂之前施用。

    Scatterometry with grating to observe resist removal rate during etch
    2.
    发明授权
    Scatterometry with grating to observe resist removal rate during etch 有权
    用光栅进行散射测量以观察蚀刻期间的抗蚀剂去除率

    公开(公告)号:US06982043B1

    公开(公告)日:2006-01-03

    申请号:US10382181

    申请日:2003-03-05

    IPC分类号: B44C1/22

    CPC分类号: H01L22/12 H01L22/26

    摘要: Disclosed are a system and method for monitoring a patterned photoresist clad-wafer structure undergoing an etch process. The system includes a semiconductor wafer structure comprising a substrate, one or more intermediate layers overlying the substrate, and a first patterned photoresist layer overlying the intermediate layers, the semiconductor wafer structure being etched through one or more openings in the photoresist layer; a wafer-etch photoresist monitoring system programmed to obtain data relating to the photoresist layer as the etch process progresses; a pattern-specific grating aligned with the wafer structure and employed in conjunction with the monitoring system, the grating having at least one of a pitch and a critical dimension identical to the first patterned photoresist layer; and a wafer processing controller operatively connected to the monitoring system and adapted to receive data from the monitoring system in order to determine adjustments to a subsequent wafer clean process.

    摘要翻译: 公开了用于监测经历蚀刻工艺的图案化光致抗蚀剂包覆晶片结构的系统和方法。 该系统包括半导体晶片结构,其包括衬底,覆盖衬底的一个或多个中间层和覆盖中间层的第一图案化光致抗蚀剂层,半导体晶片结构通过光致抗蚀剂层中的一个或多个开口进行蚀刻; 晶片蚀刻光刻胶监测系统被编程为随着蚀刻工艺的进行获得与光致抗蚀剂层有关的数据; 与晶片结构对准并与监视系统结合使用的图案特定光栅,光栅具有与第一图案化光致抗蚀剂层相同的间距和临界尺寸中的至少一个; 以及晶片处理控制器,可操作地连接到所述监控系统并且适于从所述监控系统接收数据,以便确定随后的晶片清洁过程的调整。

    Vehicle collision avoidance system
    3.
    发明授权
    Vehicle collision avoidance system 有权
    车辆碰撞避免系统

    公开(公告)号:US08280621B2

    公开(公告)日:2012-10-02

    申请号:US12081350

    申请日:2008-04-15

    IPC分类号: G06F17/10 B60Q1/00 G01S13/00

    摘要: A collision avoidance system for a machine is disclosed. The collision avoidance system has a first obstacle detection system. The first obstacle detection system is configured to detect a first obstacle and generate a corresponding first signal. Additionally, the collision avoidance system has an operator interface. The operator interface has a display configured to communicate visual information to an operator. The operator interface also has an input device configured to receive selections from the operator and generate a corresponding second signal. In addition, the collision avoidance system has a controller. The controller is in communication with the first obstacle detection system and the operator interface. The controller is configured to control the display to provide a first dangerous obstacle warning to the operator, based on the first signal. The controller is also configured to control the display to provide a second dangerous obstacle warning to the operator, based on the first and second signals.

    摘要翻译: 公开了一种用于机器的防撞系统。 防撞系统具有第一障碍物检测系统。 第一障碍物检测系统被配置为检测第一障碍物并产生对应的第一信号。 另外,防撞系统具有操作界面。 操作员接口具有被配置为向操作者传达视觉信息的显示器。 操作员界面还具有配置成从操作者接收选择并产生相应的第二信号的输入设备。 另外,防撞系统有一个控制器。 控制器与第一障碍物检测系统和操作员界面通信。 控制器被配置为基于第一信号来控制显示器以向操作者提供第一危险障碍物警告。 控制器还被配置为基于第一和第二信号来控制显示器以向操作者提供第二危险障碍物警告。

    Machine guidance system
    4.
    发明授权
    Machine guidance system 有权
    机器引导系统

    公开(公告)号:US08099205B2

    公开(公告)日:2012-01-17

    申请号:US12216582

    申请日:2008-07-08

    IPC分类号: G06F17/00 G05D1/00

    摘要: A guidance system for a mobile machine is disclosed. The guidance system may have a scanning device configured to generate a signal indicative of a lateral distance from the machine to a roadway marker, a locating device configured to determine a geographical location of the machine, and a controller in communication with the scanning device and the locating device. The controller may be configured to receive a desired lateral distance from the machine to the roadway marker, and to compare the desired lateral distance to the actual lateral distance. The controller may further be configured to implement a response to the comparison based on the geographical location.

    摘要翻译: 公开了一种移动机的引导系统。 引导系统可以具有被配置为产生指示从机器到道路标记的横向距离的信号的扫描设备,被配置为确定机器的地理位置的定位设备,以及与扫描设备和 定位装置。 控制器可以被配置为接收从机器到道路标记的期望的横向距离,并且将期望的横向距离与实际横向距离进行比较。 控制器还可以被配置为基于地理位置来实现对比较的响应。

    Inverse resist coating process
    5.
    发明授权
    Inverse resist coating process 有权
    抗反射涂层工艺

    公开(公告)号:US07943289B2

    公开(公告)日:2011-05-17

    申请号:US11087011

    申请日:2005-03-22

    IPC分类号: G03F7/20

    摘要: The invention provides systems and processes that form the inverse (photographic negative) of a patterned first coating. The patterned first coating is usually provided by a resist. After the first coating is patterned, a coating of a second material is provided thereover. The uppermost layer of the second coating is removed, where appropriate, to expose the patterned first coating. The patterned first coating is subsequently removed, leaving the second coating material in the form of a pattern that is the inverse pattern of the first coating pattern. The process may be repeated with a third coating material to reproduce the pattern of the first coating in a different material. Prior to applying the second coating, the patterned first coating may be trimmed by etching, thereby reducing the feature size and producing sublithographic features. In addition to providing sublithographic features, the invention gives a simple, efficient, and high fidelity method of obtaining inverse coating patterns.

    摘要翻译: 本发明提供了形成图案化的第一涂层的逆(照相负)的系统和工艺。 图案化的第一涂层通常由抗蚀剂提供。 在对第一涂层进行图案化之后,在其上提供第二材料的涂层。 在适当的情况下去除第二涂层的最上层以暴露图案化的第一涂层。 随后去除图案化的第一涂层,留下作为第一涂层图案的相反图案的图案形式的第二涂层材料。 可以用第三涂层材料重复该过程,以以不同的材料再现第一涂层的图案。 在施加第二涂层之前,可以通过蚀刻修整图案化的第一涂层,从而减小特征尺寸并产生亚光刻特征。 除了提供亚光刻特征之外,本发明还提供了一种简单,有效和高保真的获得反涂层图案的方法。

    Surface treatment with an acidic composition to prevent substrate and environmental contamination
    6.
    发明授权
    Surface treatment with an acidic composition to prevent substrate and environmental contamination 有权
    用酸性组合物进行表面处理,以防止底物和环境污染

    公开(公告)号:US07799514B1

    公开(公告)日:2010-09-21

    申请号:US10957367

    申请日:2004-10-01

    IPC分类号: G03F7/26

    CPC分类号: G03F7/265

    摘要: Disclosed are methods for eliminating and/or mitigating the formation of footing and/or T-tops in a resist pattern. A substrate with or without an antireflective coating layer may be treated with an acidic composition prior to the formation of a resist layer. The acid treatment prevents the loss of photo generated acid from the resist by either quenching and/or neutralizing the bases, and thereby reduces the formation of footing. The surface of a resist layer which has been irradiated may be treated with an acidic composition prior to post-exposure bake. The acid treatment prevents the loss of photo generated acid from the resist by either compensating for the evaporation and/or neutralization of the bases and thereby prevents the formation of T-tops.

    摘要翻译: 公开了用于消除和/或减轻抗蚀剂图案中的基脚和/或T形顶部的形成的方法。 具有或不具有抗反射涂层的基底可以在形成抗蚀剂层之前用酸性组合物处理。 酸处理通过淬灭和/或中和碱来防止光阻产生的酸的损失,从而减少基底的形成。 已经照射的抗蚀剂层的表面可以在曝光前烘烤之前用酸性组合物处理。 酸处理通过补偿基底的蒸发和/或中和来防止光致抗蚀剂产生的光的损失,从而防止形成T形顶部。

    RECIRCULATION AND REUSE OF DUMMY DISPENSED RESIST
    7.
    发明申请
    RECIRCULATION AND REUSE OF DUMMY DISPENSED RESIST 有权
    回收和再利用DUMMY DISPEDED RESIST

    公开(公告)号:US20070261636A1

    公开(公告)日:2007-11-15

    申请号:US11615080

    申请日:2006-12-22

    IPC分类号: B05B1/28

    摘要: The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.

    摘要翻译: 本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法,同时减轻与虚拟分配过程相关的废物。 虚拟分配的抗蚀剂返回到被采集的储存器。 在基板应用之间,分配头可以被定位成将抗蚀剂分配到返回线中。 来自分配头的抗蚀剂的流动在分配头保持抗干燥。 通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中,例如,可以减轻来自虚拟分配过程的废物。

    In-situ defect monitor and control system for immersion medium in immersion lithography
    8.
    发明授权
    In-situ defect monitor and control system for immersion medium in immersion lithography 有权
    浸没式光刻浸渍介质的原位缺陷监测和控制系统

    公开(公告)号:US07224456B1

    公开(公告)日:2007-05-29

    申请号:US10858759

    申请日:2004-06-02

    IPC分类号: G01N15/02

    摘要: A system and method for detecting bubbles in a lithographic immersion medium and for controlling a lithographic process based at least in part on the detection of bubbles is provided. A bubble monitoring component emits an incident beam that passes through the immersion medium and is incident upon a substrate to produce a reflected and/or diffracted beam(s). The reflected and/or diffracted beam(s) is received by one or more optical detectors. The presence or absence of bubbles can be derived from information extracted by scatterometry from the reflected and/or diffracted beams. A process control component interacts with a positioning component and an optical exposure component to alter a lithographic process based at least in part on the results of the scatterometry.

    摘要翻译: 提供了一种用于在光刻浸渍介质中检测气泡并且至少部分地基于气泡检测来控制光刻工艺的系统和方法。 气泡监测部件发射穿过浸没介质并入射到基板上以产生反射和/或衍射光束的入射光束。 反射和/或衍射光束被一个或多个光学检测器接收。 可以通过从反射和/或衍射光束散射法提取的信息导出气泡的存在或不存在。 过程控制部件与定位部件和光学曝光部件相互作用,以至少部分地基于散射测量的结果来改变光刻工艺。

    Systems and methods that employ exposure compensation to provide uniform CD control on reticle during fabrication
    9.
    发明授权
    Systems and methods that employ exposure compensation to provide uniform CD control on reticle during fabrication 失效
    使用曝光补偿的系统和方法在制造过程中对掩模版提供均匀的CD控制

    公开(公告)号:US07187796B1

    公开(公告)日:2007-03-06

    申请号:US10676613

    申请日:2003-10-01

    IPC分类号: G06K9/00

    摘要: The present invention relates to monitoring and controlling a reticle fabrication process (e.g. employed with an electron beam lithography process). A typical fabrication process involves discrete stages including exposure, post-exposure bake and development. After fabrication is complete, an inspection can be performed on the reticle to determine whether any parameters during fabrication and/or any data points are outside of acceptable tolerances. The data is collected and fed into an algorithm (e.g. data-mining algorithm) utilized to determine which fabrication parameters need to be modified then sends the data to a control system (e.g. advanced process control) to facilitate needed changes to the fabrication parameters.

    摘要翻译: 本发明涉及监测和控制掩模版制造工艺(例如采用电子束光刻工艺)。 典型的制造过程涉及离散阶段,包括曝光,曝光后烘烤和显影。 制造完成后,可以对掩模版进行检查,以确定制造期间和/或任何数据点中的任何参数是否超出可接受的公差。 收集数据并将其馈送到用于确定哪些制造参数需要被修改的算法(例如数据挖掘算法)中,然后将数据发送到控制系统(例如高级过程控制),以便于对制造参数的所需改变。