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公开(公告)号：US20070261636A1
公开(公告)日：2007-11-15
申请号：US11615080
申请日：2006-12-22
IPC分类号： B05B1/28
CPC分类号： H01L21/6715 , B05B15/50 , B05C11/08
摘要： The present invention provides a system and methodology for dummy-dispensing resist though a dispense head while mitigating waste associated with the dummy-dispense process. The dummy dispensed resist is returned to a reservoir from which it was taken. Between substrate applications, the dispense head can be positioned to dispense resist into a return line. The flow of resist from the dispense head keeps resist from drying at the dispense head. By funneling the dummy-dispensed resist into a return line with low volume, for example, waste from the dummy-dispensing process can be mitigated.
摘要翻译： 本发明提供了一种用于分配头的虚拟分配抗蚀剂的系统和方法，同时减轻与虚拟分配过程相关的废物。 虚拟分配的抗蚀剂返回到被采集的储存器。 在基板应用之间，分配头可以被定位成将抗蚀剂分配到返回线中。 来自分配头的抗蚀剂的流动在分配头保持抗干燥。 通过将虚拟分配的抗蚀剂漏出到具有低体积的返回管线中，例如，可以减轻来自虚拟分配过程的废物。
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2.发明授权In-situ defect monitor and control system for immersion medium in immersion lithography 有权浸没式光刻浸渍介质的原位缺陷监测和控制系统公开(公告)号：US07224456B1
公开(公告)日：2007-05-29
申请号：US10858759
申请日：2004-06-02
IPC分类号： G01N15/02
CPC分类号： G01N21/47 , G01N2015/0011 , G03F7/70341
摘要： A system and method for detecting bubbles in a lithographic immersion medium and for controlling a lithographic process based at least in part on the detection of bubbles is provided. A bubble monitoring component emits an incident beam that passes through the immersion medium and is incident upon a substrate to produce a reflected and/or diffracted beam(s). The reflected and/or diffracted beam(s) is received by one or more optical detectors. The presence or absence of bubbles can be derived from information extracted by scatterometry from the reflected and/or diffracted beams. A process control component interacts with a positioning component and an optical exposure component to alter a lithographic process based at least in part on the results of the scatterometry.
摘要翻译： 提供了一种用于在光刻浸渍介质中检测气泡并且至少部分地基于气泡检测来控制光刻工艺的系统和方法。 气泡监测部件发射穿过浸没介质并入射到基板上以产生反射和/或衍射光束的入射光束。 反射和/或衍射光束被一个或多个光学检测器接收。 可以通过从反射和/或衍射光束散射法提取的信息导出气泡的存在或不存在。 过程控制部件与定位部件和光学曝光部件相互作用，以至少部分地基于散射测量的结果来改变光刻工艺。
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公开(公告)号：US07251033B1
公开(公告)日：2007-07-31
申请号：US10858757
申请日：2004-06-02
IPC分类号： G01N21/00
CPC分类号： G01N21/94 , G01N2021/95676 , G03F1/84 , G03F7/70916
摘要： A system and method are provided for detecting contaminants or defects on a reticle in-situ. The system and method provide a system that measures the optical transmission through clear areas on a reticle and determines whether the optical transmission of a reticle has been degraded by contaminants or other defects.
摘要翻译： 提供了一种系统和方法来现场检测标线上的污染物或缺陷。 该系统和方法提供一种系统，其通过掩模版上的清晰区域测量光学透射，并确定掩模版的光学传输是否已被污染物或其他缺陷降解。
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公开(公告)号：US20050164133A1
公开(公告)日：2005-07-28
申请号：US11087011
申请日：2005-03-22
IPC分类号： G03F7/40 , H01L21/027 , H01L21/033 , G03F7/00
CPC分类号： H01L21/0331 , G03F7/40 , H01L21/0272 , H01L21/0274
摘要： The invention provides systems and processes that form the inverse (photographic negative) of a patterned first coating. The patterned first coating is usually provided by a resist. After the first coating is patterned, a coating of a second material is provided thereover. The uppermost layer of the second coating is removed, where appropriate, to expose the patterned first coating. The patterned first coating is subsequently removed, leaving the second coating material in the form of a pattern that is the inverse pattern of the first coating pattern. The process may be repeated with a third coating material to reproduce the pattern of the first coating in a different material. Prior to applying the second coating, the patterned first coating may be trimmed by etching, thereby reducing the feature size and producing sublithographic features. In addition to providing sublithographic features, the invention gives a simple, efficient, and high fidelity method of obtaining inverse coating patterns.
摘要翻译： 本发明提供了形成图案化的第一涂层的逆（照相负）的系统和工艺。 图案化的第一涂层通常由抗蚀剂提供。 在对第一涂层进行图案化之后，在其上提供第二材料的涂层。 在适当的情况下去除第二涂层的最上层以暴露图案化的第一涂层。 随后去除图案化的第一涂层，留下作为第一涂层图案的相反图案的图案形式的第二涂层材料。 可以用第三涂层材料重复该过程，以以不同的材料再现第一涂层的图案。 在施加第二涂层之前，可以通过蚀刻修整图案化的第一涂层，从而减小特征尺寸并产生亚光刻特征。 除了提供亚光刻特征之外，本发明还提供了一种简单，有效和高保真的获得反涂层图案的方法。
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5.发明授权公开(公告)号：US07173648B1
公开(公告)日：2007-02-06
申请号：US09553841
申请日：2000-04-21
申请人： Khoi Phan , Bharath Rangarajan , Bhanwar Singh , Bryan Choo
发明人： Khoi Phan , Bharath Rangarajan , Bhanwar Singh , Bryan Choo
CPC分类号： G01N21/9501 , G01N21/8803 , G01N2021/889
摘要： The present invention relates to visually monitoring an interior portion of a processing chamber in a semiconductor processing system. An image collector collects images of the interior of the chamber and provides an image signal indicative of a visual representation of the interior of the chamber. A viewing station receives the image signal and displays a visual representation of the interior of the chamber.
摘要翻译： 本发明涉及在半导体处理系统中视觉监测处理室的内部部分。 图像收集器收集室内部的图像，并提供指示室内部的视觉表示的图像信号。 观察台接收图像信号并显示室内部的视觉表示。
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6.发明授权Real time analytical monitor for soft defects on reticle during reticle inspection 有权光罩检测时光罩上的软缺陷的实时分析监视器公开(公告)号：US07069155B1
公开(公告)日：2006-06-27
申请号：US10676455
申请日：2003-10-01
申请人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan
发明人： Khoi Phan , Bhanwar Singh , Bharath Rangarajan
CPC分类号： G06T7/0004 , G01N21/3563 , G01N21/95692 , G01N2021/3595 , G01N2021/95676 , G03F1/62 , G03F1/82 , G03F1/84 , G06T2207/30148 , H01J2237/304 , H01J2237/31744
摘要： The present invention generally relates to semiconductor processing, and in particular to methods and systems for analyzing photolithographic reticle defects that include detecting soft defects on a reticle and analyzing the material composition of the defects for a particular chemical signature. Specifically, the present invention scans and images a soft defect via an optical inspection scan of a reticle, mills the defect using a Focused Ion Beam, and analyzes the defect for signatures using Electron Spectroscopy for Chemical Analysis and/or Fourier Transform Infrared Spectroscopy. The present invention thus provides for real-time analysis of the chemical composition of a soft defect on a reticle without the need for a defect identification navigation system. According to an aspect of the present invention, reticle defects can be monitored without removal of a pellicle, thus facilitating increased throughput and decreased cost in reticle repair and/or cleaning. According to another aspect of the invention, signatures occurring in trace amounts can be removed via employing a Focused Ion Beam in a non-reactive gas environment.
摘要翻译： 本发明一般涉及半导体处理，特别涉及用于分析光刻掩模版缺陷的方法和系统，包括检测掩模版上的软缺陷并分析特定化学特征的缺陷的材料成分。 具体地说，本发明通过光掩膜的光学检查扫描来扫描和成像软缺陷，使用聚焦离子束研磨缺陷，并使用化学分析和/或傅立叶变换红外光谱法的电子光谱分析签名缺陷。 因此，本发明提供了对掩模版上的软缺陷的化学成分的实时分析，而不需要缺陷识别导航系统。 根据本发明的一个方面，可以在不去除防护薄膜的情况下监视掩模版缺陷，从而有助于增加掩模版修复和/或清洁中的生产量和降低成本。 根据本发明的另一方面，可以通过在非反应性气体环境中使用聚焦离子束来移除痕量发生的痕迹。
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7.发明申请Pattern recognition and metrology structure for an x-initiative layout design 失效模式识别和计量结构，用于x-initiative布局设计公开(公告)号：US20050048741A1
公开(公告)日：2005-03-03
申请号：US10653309
申请日：2003-09-02
申请人： Khoi Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Khoi Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： G03F7/20 , G03F9/00 , H01L21/301
CPC分类号： G03F7/70625 , G03F7/70633 , G03F9/7076 , Y10S438/975
摘要： The present invention relates to inspection methods and systems utilized to provide a best means for inspection of a wafer. The methods and systems include wafer-to-reticle alignment, layer-to-layer alignment and wafer surface feature inspection. The wafer-to-reticle alignment is improved by the addition of diagonal lines to existing alignment marks to decrease the intersection size and corresponding area that a desired point can reside. Layer-to-layer alignment is improved in a similar manner by the addition of oblique and/or non-linear line segments to existing overlay targets. Also, providing for wafer surface inspection in a multitude of desired diagonal axes allows for more accurate feature measurement.
摘要翻译： 本发明涉及用于提供用于检查晶片的最佳方法的检查方法和系统。 该方法和系统包括晶片到标线片对准，层间对准和晶片表面特征检查。 通过将对角线添加到现有的对准标记来减小交叉点大小和期望点可以驻留的对应区域来改善晶片到标线阵列对准。 通过向现有覆盖目标添加倾斜和/或非线性线段，以类似的方式改善了层间对齐。 此外，在多个所需的对角轴中提供晶片表面检查允许更精确的特征测量。
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公开(公告)号：US06570157B1
公开(公告)日：2003-05-27
申请号：US09591012
申请日：2000-06-09
申请人： Bhanwar Singh , Khoi Phan , Bharath Rangarajan
发明人： Bhanwar Singh , Khoi Phan , Bharath Rangarajan
IPC分类号： G01D1800
CPC分类号： G03F7/70516 , G03F7/70625 , H01J37/28 , H01J2237/2826 , H01L21/682
摘要： The present invention relates to a system and method for calibrating a scanning electron microscope (SEM). The method comprises using a reference having multiple features of different dimensions and spatial interrelationships, wherein more than one feature dimension or spacing is measured using the SEM prior to measuring a workpiece. The dimensional and/or spatial measurements from the reference sample are correlated to obtain one or more calibration factors for the SEM. The calibration factor or factors may then be correlated with a workpiece SEM measurement to obtain a workpiece critical dimension (CD). A system is provided for calibrating a SEM including a reference with various measurable features of different dimensions and/or spacing. The system comprises an SEM to measure one or more reference sample feature dimensions and/or spacings and a processor or other device to correlate the measurement data to obtain one or more calibration factors.
摘要翻译： 本发明涉及一种用于校准扫描电子显微镜（SEM）的系统和方法。 该方法包括使用具有不同尺寸和空间相互关系的多个特征的参考，其中在测量工件之前使用SEM测量多于一个特征尺寸或间距。 来自参考样品的尺寸和/或空间测量值相关，以获得SEM的一个或多个校准因子。 然后可以将校准因子或因子与工件SEM测量值相关联，以获得工件临界尺寸（CD）。 提供了一种用于校准包括具有不同尺寸和/或间隔的各种可测量特征的参考的SEM的系统。 该系统包括用于测量一个或多个参考样本特征尺寸和/或间隔的SEM和用于使测量数据相关联以获得一个或多个校准因子的处理器或其它装置的SEM。
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9.发明申请公开(公告)号：US20050193362A1
公开(公告)日：2005-09-01
申请号：US10790296
申请日：2004-03-01
申请人： Khoi Phan , Bharath Rangarajan , Bhanwar Singh
发明人： Khoi Phan , Bharath Rangarajan , Bhanwar Singh
IPC分类号： G01N21/956 , G03F7/20 , H01L21/66 , H01L23/544 , G06F17/50
CPC分类号： G03F7/70633 , G01N21/95607 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A system facilitating measurement and correction of overlay between multiple layers of a wafer is disclosed. The system comprises an overlay target that represents overlay between three or more layers of a wafer and a measurement component that determines overlay error existent in the overlay target, thereby determining overlay error between the three or more layers of the wafer. A control component can be provided to correct overlay error between adjacent and non-adjacent layers, wherein the correction is based at least in part on measurements obtained by the measurement component.
摘要翻译： 公开了一种便于测量和校正晶片多层之间覆盖层的系统。 该系统包括覆盖在三层或多层晶片之间的重叠目标，以及确定覆盖目标中存在的重叠误差的测量部件，从而确定晶片的三层或更多层之间的重叠误差。 可以提供控制部件来校正相邻层和非相邻层之间的覆盖误差，其中校正至少部分地基于由测量部件获得的测量。
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10.发明授权Electric measurement of reference sample in a CD-SEM and method for calibration 失效CD-SEM中参考样品的电测量和校准方法公开(公告)号：US06573498B1
公开(公告)日：2003-06-03
申请号：US09608096
申请日：2000-06-30
IPC分类号： G01N2300
CPC分类号： G01N23/225 , H01J2237/2826
摘要： The present invention relates to a system and method for calibrating a scanning electron microscope (SEM). The method comprises measuring an electrical characteristic of a calibration standard reference sample feature and correlating the electrical measurement with an SEM measurement thereof. The correlation of the electrical and SEM measurements provides a critical dimension (CD) for the reference sample feature which can then be used to correlate SEM measurements of workpiece features. The system provides a reference sample having a measurable feature electrically connected to a probe. The probe provides an electrical measurement of the reference sample feature. The system further comprises a scanning electron microscope (SEM) adapted to provide an optical measurement of the reference sample feature. A processor is provided to correlate the optical and electrical measurements of the reference sample feature, whereby a reference feature CD is obtained. The system may further correlate workpiece feature measurements with the reference feature CD in order to determine or obtain a workpiece feature CD.
摘要翻译： 本发明涉及一种用于校准扫描电子显微镜（SEM）的系统和方法。 该方法包括测量校准标准参考样本特征的电特性并将电测量与其SEM测量相关联。 电和SEM测量的相关性为参考样品特征提供了临界尺寸（CD），然后可以将其用于关联工件特征的SEM测量。 该系统提供具有电连接到探针的可测量特征的参考样本。 探头提供参考样品特征的电气测量。 该系统还包括适于提供参考样品特征的光学测量的扫描电子显微镜（SEM）。 提供处理器以使参考样本特征的光学和电学测量相关，由此获得参考特征CD。 该系统可以进一步将工件特征测量与参考特征CD相关联，以便确定或获得工件特征CD。
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