公开(公告)号：US20120068389A1

公开(公告)日：2012-03-22

申请号：US13064222

申请日：2011-03-11

申请人： Chan Park ,  Wook Jo ,  Jin-Sang Kim ,  O-Jong Kwon

发明人： Chan Park ,  Wook Jo ,  Jin-Sang Kim ,  O-Jong Kwon

IPC分类号： C04B35/645

CPC分类号： C04B35/01 ,  B32B18/00 ,  C04B35/6268 ,  C04B35/645 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/5292 ,  C04B2235/604 ,  C04B2235/612 ,  C04B2235/663 ,  C04B2235/666 ,  C04B2235/787

摘要： Provided is a method of fabricating polycrystalline ceramic for thermoelectric devices. The method includes preparing calcined ceramic powders, forming a ceramic sheet by uni-axially pressing the calcined ceramic powders, stacking a plurality of the ceramic sheets in a uni-axial direction, and cofiring the stacked the plurality of the ceramic sheets.

摘要翻译： 提供一种制造用于热电装置的多晶陶瓷的方法。 该方法包括制备煅烧陶瓷粉末，通过单轴压制煅烧陶瓷粉末，沿单轴方向堆叠多个陶瓷片材，并共烧多个陶瓷片材，形成陶瓷片材。

公开(公告)号：US08804417B2

公开(公告)日：2014-08-12

申请号：US13157343

申请日：2011-06-10

申请人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

发明人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/22

CPC分类号： G11C16/10 ,  G11C16/3418

摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.

摘要翻译： 一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。 非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

公开(公告)号：US08322019B2

公开(公告)日：2012-12-04

申请号：US12997652

申请日：2010-07-05

申请人： Kyeong Dal Choi ,  Ji Kwang Lee ,  Woo Seok Kim ,  Chan Park ,  Yung Il Kim

发明人： Kyeong Dal Choi ,  Ji Kwang Lee ,  Woo Seok Kim ,  Chan Park ,  Yung Il Kim

IPC分类号： H01B13/02 ,  H01B7/30 ,  H01B12/06 ,  H01B12/08

CPC分类号： H01B12/02 ,  H01B7/306 ,  Y02E40/641 ,  Y10T29/49014 ,  Y10T29/49194

摘要： Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other.

摘要翻译： 提供了一种用于超导线的多重转置方法，通过使来自第二代超导线的每个超导线单元首先被转置，然后以每个单元的相位沿着该长度改变的方式移位每个超导线单元， 包括通过在超导线上制作曲线来制备导线，使得外延生长的薄多层的超导线以锯齿形切割，然后反复制作曲线并通过机加工所需长度的线; 通过组合多个所制备的导线使相邻导线的曲线彼此接触并重叠而制造第一转置超导线单元; 通过布置第一转置超导线单元并通过沿着长度平行地定位多个第一转置的超导线单元来制备超导线单元束; 以及通过在所述超导线单元束的中心轴线上沿着要被扭曲并且彼此组合的长度旋转所述多个超导线单元，在所述第一转置的超导线单元上进行第二转置。

公开(公告)号：US20120273477A1

公开(公告)日：2012-11-01

申请号：US13456897

申请日：2012-04-26

申请人： Guen Yong PARK ,  Jae Hyoun Kim ,  Cheol Jin Kim ,  Han Seong Kang ,  Jin Hae Cho ,  Eun Oh Kim ,  Chan Park ,  Dong-Ho Lee

发明人： Guen Yong PARK ,  Jae Hyoun Kim ,  Cheol Jin Kim ,  Han Seong Kang ,  Jin Hae Cho ,  Eun Oh Kim ,  Chan Park ,  Dong-Ho Lee

IPC分类号： A47J27/21 ,  H05B3/02

CPC分类号： F24C15/327

摘要： A steam cooking apparatus with improved water supply and drainage structures. The apparatus includes a body, a cooking compartment, a steam generator to supply steam into the cooking compartment, a water vessel to store water and supply the water into the steam generator, a water supply device including a holder and a slider slidably mounted in the holder so as to be withdrawn from the body, a first water supply tube connecting the slider and the water vessel, a second water supply tube connecting the water vessel and the steam generator, and a drain tube to drain water in the steam generator to the outside of the body. The drain tube includes an end fixed to the slider so that the end of the drain tube is withdrawn with the slider from the body when water in the steam generator is drained to the outside.

摘要翻译： 具有改善给排水结构的蒸汽烹饪设备。 该装置包括主体，烹饪室，蒸汽发生器，以将蒸汽供应到烹饪室中，水容器，用于存储水并将水供应到蒸汽发生器中;供水装置，其包括保持器和可滑动地安装在所述蒸汽发生器中的滑块 保持器，以便从身体中取出，连接滑块和水容器的第一供水管，连接水容器和蒸汽发生器的第二供水管和排水管，以将蒸汽发生器中的水排出到 身体外。 排水管包括固定到滑块的端部，使得当蒸汽发生器中的水排出到外部时，排水管的端部与滑块一起从主体被抽出。

公开(公告)号：US08089332B2

公开(公告)日：2012-01-03

申请号：US12679697

申请日：2009-11-19

申请人： Kyeong-Dal Choi ,  Ji-Kwang Lee ,  Woo-Seok Kim ,  Chan Park ,  Sun-Bok Choi

发明人： Kyeong-Dal Choi ,  Ji-Kwang Lee ,  Woo-Seok Kim ,  Chan Park ,  Sun-Bok Choi

IPC分类号： H01F27/02

CPC分类号： H01F36/00 ,  H01F6/065 ,  Y02E40/66

摘要： The present invention relates to a superconducting power transforming apparatus. The superconducting power transforming apparatus according to the present invention comprises a transformer housing having a transforming cable passing hole and filled with a liquid cooling means; a superconducting transformer housed in the transformer housing in a state that the superconducting transformer is immersed in the liquid cooling means; a tap changer housing having a tap changing cable passing hole and vacuum-sealed from outside; a power tap changer housed in the vacuum tap changer housing; and a cable linking pipe vacuum-sealed from the transformer housing and the tap changer housing, and linking the transforming cable passing hole with the tap changing passing hole in order that a transformer winding tap cable connecting the superconducting transformer and the power tap changer passes through. Consequently, it is possible to guarantee stable operation of a superconducting transformer which works at an extremely low temperature and a power tap changer as like On-Load Tap Changer which works at low temperature.

摘要翻译： 本发明涉及一种超导功率变换装置。 根据本发明的超导电力变换装置包括具有变换电缆通孔并且充满液体冷却装置的变压器壳体; 以超导变压器浸入液体冷却装置的状态容纳在变压器外壳中的超导变压器; 分接开关壳体，具有抽头更换电缆通孔并从外部真空密封; 一个容纳在真空分接开关壳体中的电源分接开关; 以及从变压器壳体和分接开关壳体真空密封的电缆连接管，并将变压电缆通孔与抽头更换通孔相连接，以便连接超导变压器和电源分接开关的变压器绕组电缆通过 。 因此，可以保证在极低温度下工作的超导变压器的稳定运行，以及在低温工作的有载分接开关的功率抽头变换器。

公开(公告)号：US20110305079A1

公开(公告)日：2011-12-15

申请号：US13157343

申请日：2011-06-10

申请人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

发明人： Chan Park ,  Changseok Kang ,  Sung-Il Chang ,  Byeong-In Choe

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/3418

摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.

摘要翻译： 一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。 非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

公开(公告)号：US20110239443A1

公开(公告)日：2011-10-06

申请号：US12997652

申请日：2010-07-05

申请人： Kyeong Dal Choi ,  Ji K wang Lee ,  Woo Seok Kim ,  Chan Park ,  Yung II Kim

发明人： Kyeong Dal Choi ,  Ji K wang Lee ,  Woo Seok Kim ,  Chan Park ,  Yung II Kim

IPC分类号： H01L39/24

CPC分类号： H01B12/02 ,  H01B7/306 ,  Y02E40/641 ,  Y10T29/49014 ,  Y10T29/49194

摘要： Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other.

摘要翻译： 提供了一种用于超导线的多重转置方法，通过使来自第二代超导线的每个超导线单元首先被转置，然后以每个单元的相位沿着该长度改变的方式移位每个超导线单元， 包括通过在超导线上制作曲线来制备导线，使得外延生长的薄多层的超导线以锯齿形切割，然后反复制作曲线并通过机加工所需长度的线; 通过组合多个所制备的导线使相邻导线的曲线彼此接触并重叠而制造第一转置超导线单元; 通过布置第一转置超导线单元并通过沿着长度平行地定位多个第一转置的超导线单元来制备超导线单元束; 以及通过在所述超导线单元束的中心轴线上沿着要被扭曲并且彼此组合的长度旋转所述多个超导线单元，在所述第一转置的超导线单元上进行第二转置。

公开(公告)号：US08019558B2

公开(公告)日：2011-09-13

申请号：US12666556

申请日：2009-05-08

申请人： Dae-Sung Cheon ,  Eui-Sub Park ,  Yong-Bok Jung ,  Chan Park ,  Joong-Ho Synn

发明人： Dae-Sung Cheon ,  Eui-Sub Park ,  Yong-Bok Jung ,  Chan Park ,  Joong-Ho Synn

IPC分类号： G01B5/28

CPC分类号： G01V1/008 ,  E02D1/022 ,  G10K11/002

摘要： Provided is a method of predicting failure in geotechnical structures using an AE method instead of a conventional displacement or stress measuring method, which belongs to a field of rock mechanics and geotechnical engineering. The method is a measurement technology for identifying signs of failure in geotechnical structures using Acoustic Emission (AE) signals generated by damage in the geotechnical structure and also providing management standard for failure prediction.

摘要翻译： 提供了一种使用AE方法代替岩石力学和岩土工程领域的常规位移或应力测量方法来预测岩土结构失效的方法。 该方法是使用由岩土结构中的损伤产生的声发射（AE）信号识别岩土结构失效迹象的测量技术，并提供故障预测的管理标准。

公开(公告)号：US20110204468A1

公开(公告)日：2011-08-25

申请号：US13064914

申请日：2011-04-26

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

公开(公告)号：US20110163362A1

公开(公告)日：2011-07-07

申请号：US13064176

申请日：2011-03-09

申请人： Won-je Park ,  Chan Park ,  Young-hoon Park ,  Jae-ho Song ,  Jong-wook Hong ,  Keo-sung Park

发明人： Won-je Park ,  Chan Park ,  Young-hoon Park ,  Jae-ho Song ,  Jong-wook Hong ,  Keo-sung Park

IPC分类号： H01L31/14

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14689

摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.

摘要翻译： 制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。 图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。