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    Terahertz radiation sources and methods of manufacturing the same
    1.
    发明授权
    Terahertz radiation sources and methods of manufacturing the same 有权
    太赫兹辐射源及其制造方法

    公开(公告)号：US08638035B2

    公开(公告)日：2014-01-28

    申请号：US12805002

    申请日：2010-07-07

    申请人： Chan-wook Baik ,  Joo-ho Lee ,  Hyung-bin Son

    发明人： Chan-wook Baik ,  Joo-ho Lee ,  Hyung-bin Son

    IPC分类号： H01J7/24

    CPC分类号： H01J25/34 ,  H01J25/02

    摘要： A terahertz radiation source includes: a cathode configured to emit an electron beam, an anode configured to focus the electron beam emitted from the cathode; a collector facing the cathode and configured to collect the emitted electron beam focused by the anode; an oscillating circuit positioned between the anode and the collector and configured to convert energy of a passing electron beam into electromagnetic wave energy; and an output unit connected to the oscillating circuit and configured to externally emit the electromagnetic wave energy.

    摘要翻译： 太赫兹辐射源包括：被配置为发射电子束的阴极，配置成聚焦从阴极发射的电子束的阳极; 面对阴极并且被配置为收集由阳极聚焦的发射电子束的集电体; 位于所述阳极和所述集电极之间并被配置为将通过的电子束的能量转换成电磁波能量的振荡电路; 以及连接到所述振荡电路并被配置为从外部发射所述电磁波能量的输出单元。

    Terahertz oscillators and methods of manufacturing electron emitters
    2.
    发明授权
    Terahertz oscillators and methods of manufacturing electron emitters 有权
    太赫兹振荡器和制造电子发射器的方法

    公开(公告)号：US08212623B2

    公开(公告)日：2012-07-03

    申请号：US12801711

    申请日：2010-06-22

    申请人： Chan-wook Baik ,  Joo-ho Lee

    发明人： Chan-wook Baik ,  Joo-ho Lee

    IPC分类号： H03B17/00

    CPC分类号： H03B17/00

    摘要： A terahertz oscillator may include a first insulating layer, an electron emitter on the first insulating layer, adapted to emit an electron beam, and including a cathode, an anode, an oscillating circuit, and a collector sequentially disposed, spaced apart from each other, on the first insulating layer in a direction in which the electron beam is emitted from the electron emitter, wherein the oscillating circuit converts energy of the electron beam to energy of an electromagnetic wave, and wherein the collector collects the electron beam, an output unit adapted to emit the electromagnetic wave from the oscillating circuit to outside of the terahertz oscillator, and an electron emitting material layer. The cathode may include a first curved portion that extends in a direction perpendicular to the first insulating layer. The electron emitting material layer may be on an inner surface of the first curved portion of the cathode.

    摘要翻译： 太赫兹振荡器可以包括第一绝缘层，第一绝缘层上的电子发射器，适于发射电子束，并且包括彼此间隔开的顺序设置的阴极，阳极，振荡电路和集电极， 在电子束从电子发射器发射的方向上的第一绝缘层上，其中振荡电路将电子束的能量转换为电磁波的能量，并且其中集电极收集电子束，输出单元适应 以将电磁波从振荡电路发射到太赫兹振荡器外部，以及电子发射材料层。 阴极可以包括沿垂直于第一绝缘层的方向延伸的第一弯曲部分。 电子发射材料层可以在阴极的第一弯曲部分的内表面上。

    GaN film structure, method of fabricating the same, and semiconductor device including the same
    3.
    发明授权
    GaN film structure, method of fabricating the same, and semiconductor device including the same 有权
    GaN膜结构，其制造方法和包括该GaN膜结构的半导体器件

    公开(公告)号：US08791468B2

    公开(公告)日：2014-07-29

    申请号：US13270569

    申请日：2011-10-11

    申请人： Joo-ho Lee ,  Jun-hee Choi ,  Sang-hun Lee ,  Mi-jeong Song

    发明人： Joo-ho Lee ,  Jun-hee Choi ,  Sang-hun Lee ,  Mi-jeong Song

    IPC分类号： H01L27/15

    CPC分类号： H01L21/02458 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/02 ,  H01L33/24 ,  H01L41/1132 ,  H01L41/319

    摘要： A method of fabricating a gallium nitride (GaN) thin layer, by which a high-quality GaN layer may be grown on a large-area substrate using an electrode layer suspended above a substrate, a GaN film structure fabricated using the method, and a semiconductor device including the GaN film structure. The method includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and form at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

    摘要翻译： 一种制造氮化镓（GaN）薄层的方法，通过该方法可以使用悬浮在衬底上的电极层在大面积衬底上生长高质量的GaN层，使用该方法制造的GaN膜结构和 包括GaN膜结构的半导体器件。 该方法包括在衬底上形成牺牲层，在牺牲层上形成第一缓冲层，在第一缓冲层上形成电极层，在电极层上形成第二缓冲层，部分蚀刻牺牲层以形成至少 两个支撑构件被构造成支撑第一缓冲层并在衬底和第一缓冲层之间形成至少一个空气腔，并在第二缓冲层上形成GaN薄层。

    Coupled resonator filter and fabrication method thereof
    4.
    发明授权
    Coupled resonator filter and fabrication method thereof 有权
    耦合谐振滤波器及其制造方法

    公开(公告)号：US07548139B2

    公开(公告)日：2009-06-16

    申请号：US11455190

    申请日：2006-06-19

    申请人： Hao-seok Park ,  Joo-ho Lee ,  Byeoung-ju Ha ,  Seog-woo Hong ,  Hyung Choi ,  In-sang Song

    发明人： Hao-seok Park ,  Joo-ho Lee ,  Byeoung-ju Ha ,  Seog-woo Hong ,  Hyung Choi ,  In-sang Song

    IPC分类号： H03H9/17 ,  H03H9/00

    CPC分类号： H03H9/584 ,  H03H3/04 ,  H03H9/587 ,  H03H9/588

    摘要： A coupled resonator filter and a method of fabricating the coupled resonator filter are provided. The method includes: sequentially stacking a first electrode, a first piezoelectric layer, a second electrode, an insulating layer, a third electrode, a second piezoelectric layer, and a fourth electrode on a surface of a substrate; sequentially patterning the first electrode, the first piezoelectric layer, the second electrode, the insulating layer, the third electrode, the second piezoelectric layer, and the fourth electrode to expose areas of the first, second, and third electrodes; forming a plurality of connection electrodes respectively connected to the exposed areas of the first, second, and third electrodes and an area of the fourth electrode; and etching an area of the substrate underneath the first electrode to form an air gap.

    摘要翻译： 提供耦合谐振滤波器和制造耦合谐振滤波器的方法。 该方法包括：在基板的表面上依次堆叠第一电极，第一压电层，第二电极，绝缘层，第三电极，第二压电层和第四电极; 顺序地构图第一电极，第一压电层，第二电极，绝缘层，第三电极，第二压电层和第四电极，以暴露第一，第二和第三电极的区域; 形成分别连接到第一，第二和第三电极的暴露区域和第四电极的区域的多个连接电极; 并且蚀刻在第一电极下方的衬底的区域以形成气隙。

    Inductor integrated chip
    5.
    发明授权
    Inductor integrated chip 有权
    电感集成芯片

    公开(公告)号：US07615842B2

    公开(公告)日：2009-11-10

    申请号：US11473079

    申请日：2006-06-23

    申请人： Joo-ho Lee ,  Hae-seok Park ,  Byeoung-ju Ha ,  Seog-woo Hong ,  Hyung Choi ,  In-sang Song

    发明人： Joo-ho Lee ,  Hae-seok Park ,  Byeoung-ju Ha ,  Seog-woo Hong ,  Hyung Choi ,  In-sang Song

    IPC分类号： H01L29/00

    CPC分类号： H03H9/0542 ,  H03H9/105

    摘要： An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

    摘要翻译： 提供一种电感器集成芯片及其制造方法。 电感器集成芯片包括晶片; 结合在晶片表面上的电感器; 电路元件，其形成在所述晶片的表面上并且耦合到所述电感器的第一端; 连接到晶片表面并封装电感器和电路元件的封装晶片; 以及形成在封装晶片上并连接到电感器的第二端的连接电极。 该方法包括在晶片的表面上形成电感器和电路元件，其中电路元件耦合到电感器的第一端; 在封装晶片上形成连接电极; 并且通过接合晶片和封装晶片来封装电感器和电路元件，以将连接电极与电感器的第二端连接。

    RF module with multi-stack structure
    7.
    发明授权
    RF module with multi-stack structure 有权
    RF模块具有多堆叠结构

    公开(公告)号：US07675154B2

    公开(公告)日：2010-03-09

    申请号：US11634247

    申请日：2006-12-06

    申请人： Seog-woo Hong ,  In-sang Song ,  Byeong-ju Ha ,  Hae-seok Park ,  Jun-sik Hwang ,  Joo-ho Lee

    发明人： Seog-woo Hong ,  In-sang Song ,  Byeong-ju Ha ,  Hae-seok Park ,  Jun-sik Hwang ,  Joo-ho Lee

    IPC分类号： H01L23/02 ,  H01L23/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H03H9/0547 ,  H01L2924/0002 ,  H03H9/587 ,  H01L2924/00

    摘要： A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.

    摘要翻译： 射频（RF）模块和包括其的多RF模块包括基底基板，能够处理形成在基底基板上的RF信号的第一元件，能够处理从第一元件分离并布置在第一元件上的RF信号的第二元件 ，与所述基底衬底耦合以封装所述第一和第二元件的帽衬底，所述第一和第二元件包括将所述第一和第二元件电连接到外部的多个通孔，以及封装并连接所述基底衬底和所述帽衬底的焊盘，以及 将第一和第二元件电连接到贯通电极。

    Resonator and fabrication method thereof
    9.
    发明申请
    Resonator and fabrication method thereof 有权
    谐振器及其制造方法

    公开(公告)号：US20080042780A1

    公开(公告)日：2008-02-21

    申请号：US11657587

    申请日：2007-01-25

    申请人： Joo-ho Lee ,  Hae-seok Park ,  Sang-hun Lee ,  Duck-hwan Kim ,  Sang-chul Sul

    发明人： Joo-ho Lee ,  Hae-seok Park ,  Sang-hun Lee ,  Duck-hwan Kim ,  Sang-chul Sul

    IPC分类号： H03H9/54

    CPC分类号： H03H3/02 ,  H03H9/02118 ,  H03H9/173 ,  H03H2003/021

    摘要： A resonator including a substrate, and a resonating unit having an active region that causes resonances and a non-active region that does not cause resonances, and having a first electrode, a piezoelectric film, and a second electrode layered in turn on the substrate. At least one of the first and the second electrodes is formed, so that at least a portion of a non-active region portion thereof has a thickness different from that of an active region portion thereof.

    摘要翻译： 包括基板的谐振器和具有引起谐振的有源区域和不引起谐振的非有源区域的谐振单元，以及依次层叠在基板上的第一电极，压电膜和第二电极。 形成第一和第二电极中的至少一个，使得其非活性区域部分的至少一部分的厚度与其有源区域部分的厚度不同。

    RF module, multi RF module including the RF module, and method of manufacturing the RF module
    10.
    发明申请
    RF module, multi RF module including the RF module, and method of manufacturing the RF module 有权
    RF模块，包括RF模块的多RF模块和RF模块的制造方法

    公开(公告)号：US20070170565A1

    公开(公告)日：2007-07-26

    申请号：US11634247

    申请日：2006-12-06

    申请人： Seog-woo Hong ,  In-sang Song ,  Byeong-ju Ha ,  Hae-seok Park ,  Jun-sik Hwang ,  Joo-ho Lee

    发明人： Seog-woo Hong ,  In-sang Song ,  Byeong-ju Ha ,  Hae-seok Park ,  Jun-sik Hwang ,  Joo-ho Lee

    IPC分类号： H01L23/02

    CPC分类号： H03H9/0547 ,  H01L2924/0002 ,  H03H9/587 ,  H01L2924/00

    摘要： A radio frequency (RF) module and a multi RF module including the same include a base substrate, a first element capable of processing RF signals formed on the base substrate, a second element capable of processing RF signals separated from and disposed over the first element, a cap substrate coupled with the base substrate to encapsulate the first and second elements including a plurality of through electrodes that electrically connect the first and second elements to the outside, and a bonding pad that encapsulates and joins the base substrate and the cap substrate and electrically connects the first and second elements to the through electrodes.

    摘要翻译： 射频（RF）模块和包括其的多RF模块包括基底基板，能够处理形成在基底基板上的RF信号的第一元件，能够处理从第一元件分离并布置在第一元件上的RF信号的第二元件 ，与所述基底衬底耦合以封装所述第一和第二元件的帽衬底，所述第一和第二元件包括将所述第一和第二元件电连接到外部的多个通孔，以及封装并连接所述基底衬底和所述帽衬底的焊盘，以及 将第一和第二元件电连接到贯通电极。