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    Method of using optical proximity effects to create electrically blown fuses with sub-critical dimension neck downs
    1.
    发明授权
    Method of using optical proximity effects to create electrically blown fuses with sub-critical dimension neck downs 失效
    使用光学邻近效应来制造具有亚临界尺寸颈缩的电熔丝保险丝的方法

    公开(公告)号：US06436585B1

    公开(公告)日：2002-08-20

    申请号：US09512923

    申请日：2000-02-25

    申请人： Chandrasekhar Narayan ,  Axel Brintzinger ,  Fred L. Einspruch ,  Henning Haffner ,  Alan C. Thomas

    发明人： Chandrasekhar Narayan ,  Axel Brintzinger ,  Fred L. Einspruch ,  Henning Haffner ,  Alan C. Thomas

    IPC分类号： G03F900

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of making a photolithography mask for use in creating an electrical fuse on a semiconductor structure comprises initially determining a pattern for a desired electrical fuse, with the pattern including a fuse portion of substantially constant width except for a localized narrowed region of the fuse portion at which the electrical fuse is designed to blow. The method then includes providing a photolithography mask substrate and creating on the photolithography mask substrate a fuse mask element adapted to absorb transmission of an energy beam. The fuse mask element has a first mask portion of substantially constant width corresponding to the desired electrical fuse pattern portion of substantially constant width, and a second mask portion corresponding to the localized narrowed region of the fuse portion. The second mask portion comprises either an additional mask element spaced from the first mask portion, a narrowed width portion, or a gap in the first mask portion. The second mask portion is of a configuration sufficient to create a latent image of the electrical fuse pattern, including the localized narrowed region of the fuse portion at which the electrical fuse is designed to blow, upon passing the energy beam through the photolithography mask and onto a resist layer. Preferably, the fuse portion of substantially constant width on the determined fuse pattern has a design width less than about 0.25 &mgr;m, and wherein the localized narrowed region of the fuse portion has a design width less than the design width of the fuse portion.

    摘要翻译： 制造用于在半导体结构上形成电熔丝的光刻掩模的方法包括：首先确定所需电熔丝的图案，其中所述图案包括基本恒定宽度的熔丝部分，除了熔丝部分的局部变窄区域 电熔丝被设计在其上。 该方法然后包括提供光刻掩模基板，并在光刻掩模基板上产生适于吸收能量束透射的熔丝屏蔽元件。 熔丝掩模元件具有对应于基本恒定宽度的期望电熔丝图案部分的基本恒定宽度的第一掩模部分和对应于熔丝部分的局部变窄区域的第二掩模部分。 第二掩模部分包括与第一掩模部分间隔开的附加掩模元件，第一掩模部分中的窄宽度部分或间隙。 第二掩模部分具有足以产生电熔丝图案的潜像的构造，包括将电熔丝设计成熔断部分的熔断部分的局部变窄区域，以使能量束通过光刻掩模并进入 抗蚀剂层。 优选地，在确定的熔丝图案上的基本恒定宽度的熔丝部分具有小于约0.25μm的设计宽度，并且其中熔断器部分的局部变窄区域具有小于熔丝部分的设计宽度的设计宽度。

    Mask layout formation
    2.
    发明授权
    Mask layout formation 有权
    面膜布局形成

    公开(公告)号：US08875063B2

    公开(公告)日：2014-10-28

    申请号：US12901595

    申请日：2010-10-11

    申请人： Zachary Baum ,  Scott D. Halle ,  Henning Haffner

    发明人： Zachary Baum ,  Scott D. Halle ,  Henning Haffner

    IPC分类号： G06F17/50 ,  G03F1/00 ,  G03F1/30

    CPC分类号： G03F1/30 ,  G03F1/0069

    摘要： A method for forming a mask layout is described. A plurality of phase shapes are formed on either side of a critical feature of a design layout of an intergrated circuit chip having a plurality of critical features. A plurality of transition edges are identified from the edges of each phase shape. Each transition edge is parallel to critical feature. A transition space is identified as defined by one of the group including two transition edges and one transition edge. A transition polygon is formed by closing each transition space with at least one closing edge. Each transition polygon is transformed into a printing assist feature. A mask layout is formed from the printing assist features and critical features.

    摘要翻译： 描述了形成掩模布局的方法。 在具有多个关键特征的集成电路芯片的设计布局的关键特征的任一侧上形成多个相位形状。 从每个相位形状的边缘识别多个过渡边缘。 每个过渡边缘与关键特征平行。 识别由包括两个过渡边缘和一个过渡边缘的组之一所定义的过渡空间。 通过用至少一个关闭边缘关闭每个过渡空间来形成过渡多边形。 每个过渡多边形被转换成打印辅助功能。 从打印辅助功能和关键特征形成面罩布局。

    L-shaped feature, method of making an L-shaped feature and method of making an L-shaped structure
    3.
    发明授权
    L-shaped feature, method of making an L-shaped feature and method of making an L-shaped structure 有权
    L形特征，制作L形特征的方法和制作L形结构的方法

    公开(公告)号：US08426114B2

    公开(公告)日：2013-04-23

    申请号：US13016841

    申请日：2011-01-28

    申请人： Henning Haffner ,  Martin Ostermayr

    发明人： Henning Haffner ,  Martin Ostermayr

    IPC分类号： G03F7/00

    CPC分类号： G03F1/36 ,  G03F1/32

    摘要： In accordance with an embodiment of the present invention, a method for making a semiconductor device comprises forming a photo sensitive layer on a semiconductive substrate, and forming an L-shaped structure in the photo sensitive layer by exposing the photo sensitive layer to light via a reticle, wherein the reticle comprises an L-shapes feature having a first non-orthogonal edge at an intersection of two legs of the L-shaped feature.

    摘要翻译： 根据本发明的实施例，制造半导体器件的方法包括在半导体衬底上形成感光层，并且通过经由光敏层曝光光敏层而在光敏层中形成L形结构 掩模版，其中所述标线片包括在所述L形特征的两条腿的交叉处具有第一非正交边缘的L形特征。

    Generating cut mask for double-patterning process
    4.
    发明授权
    Generating cut mask for double-patterning process 失效
    生成双图案工艺的切割面具

    公开(公告)号：US08365108B2

    公开(公告)日：2013-01-29

    申请号：US12985643

    申请日：2011-01-06

    申请人： Zachary Baum ,  Henning Haffner ,  Scott M. Mansfield

    发明人： Zachary Baum ,  Henning Haffner ,  Scott M. Mansfield

    IPC分类号： G06F17/50 ,  G06F19/00 ,  G03F1/00 ,  G21K5/00 ,  G06K9/00

    CPC分类号： G03F1/36 ,  G03F1/70

    摘要： Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.

    摘要翻译： 本发明的方面包括设计光掩模的计算机实现的方法。 在一个实施例中，该方法包括：使用第一光掩模设计来模拟第一光掩模图案化工艺以产生模拟轮廓; 将模拟轮廓与期望的设计进行比较; 识别不同于模拟轮廓和所需设计的区域; 在基于所识别的区域的第一光掩模图案化工艺之后，为第二光掩模图案化工艺创建期望的目标形状; 以及基于期望的目标形状提供用于形成第二光掩模设计的期望的目标形状。

    METHODOLOGY OF PLACING PRINTING ASSIST FEATURE FOR RANDOM MASK LAYOUT
    7.
    发明申请
    METHODOLOGY OF PLACING PRINTING ASSIST FEATURE FOR RANDOM MASK LAYOUT 有权
    打印辅助功能的随机面膜布局方法

    公开(公告)号：US20100175040A1

    公开(公告)日：2010-07-08

    申请号：US12350251

    申请日：2009-01-08

    申请人： Jason E. Meiring ,  Henning Haffner

    发明人： Jason E. Meiring ,  Henning Haffner

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： Embodiments of the present invention provide a method of placing printing assist features in a mask layout. The method includes providing a design layout having one or more designed features; generating a set of parameters, the set of parameters being associated with one or more printing assist features (PrAFs); adding the one or more PrAFs of the set of parameters to the design layout to produce a modified design layout; performing simulation of the one or more PrAFs and the one or more designed features on the modified design layout; verifying whether the one or more PrAFs are removable based on results of the simulation; and creating a set of PrAF placement rules based on the set of parameters, if the one or more PrAFs are verified as removable. The set of PrAF placement rules may be used in creating a final set of PrAF features to be used for creating the mask layout.

    摘要翻译： 本发明的实施例提供了一种将打印辅助特征放置在掩模布局中的方法。 该方法包括提供具有一个或多个设计特征的设计布局; 产生一组参数，该组参数与一个或多个打印辅助特征（PrAF）相关联; 将该组参数中的一个或多个PrAF添加到设计布局以产生修改的设计布局; 在修改的设计布局上执行一个或多个PrAF的模拟和一个或多个设计的特征; 基于模拟结果验证一个或多个PrAF是否可移除; 以及如果一个或多个PrAF被验证为可移除的，则基于该参数集创建一组PrAF放置规则。 PrAF放置规则的集合可以用于创建用于创建掩模布局的最后一组PrAF特征。