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47 条记录 (耗时 0.038 秒)

    Cap assembly of battery
    1.
    发明授权
    Cap assembly of battery 有权
    电池盖组件

    公开(公告)号：US6117586A

    公开(公告)日：2000-09-12

    申请号：US165308

    申请日：1998-10-02

    申请人： Chang-seob Kim ,  Hyun-woo Kim ,  Ki-woong Jang ,  E-ju Hwang ,  Eui-sun Hong ,  Yoshiaki Miura

    发明人： Chang-seob Kim ,  Hyun-woo Kim ,  Ki-woong Jang ,  E-ju Hwang ,  Eui-sun Hong ,  Yoshiaki Miura

    IPC分类号： H01M2/04 ,  H01M2/10 ,  H01M2/12 ,  H01M2/34 ,  H01M6/50

    CPC分类号： H01M2/0404 ,  H01M2/1241 ,  H01M2/1061 ,  H01M2200/00 ,  H01M2200/20

    摘要： A cap assembly of a battery, comprising: a cap plate for covering the upper portion of a battery case; a positive terminal installed on the cap plate, insulated from the cap plate; a rivet member having a rivet protrusion, through which a vent hole is formed, inserted through holes formed in the cap plate and the positive terminal for riveting them together, the rivet member electrically connected to the positive terminal; a safety member installed at the lower end of rivet member, blocking the vent hole; and a positive tap fixing member attached to the lower end of the safety member and joined to a positive tap of an electrode assembly in the battery case, wherein the safety member is ruptured and separated from the positive tap fixing member by an internal pressure increase of the battery case.

    摘要翻译： 一种电池的盖组件，包括：用于覆盖电池壳体的上部的盖板; 安装在盖板上的正极端子，与盖板绝缘; 具有铆钉突起的铆钉构件，形成有通气孔的铆钉突起插入通过形成在盖板中的孔和用于铆接在一起的正极端子，铆接构件电连接到正极端子; 安装在铆钉构件下端的安全构件，堵塞通气孔; 以及安装在所述安全部件的下端并与电池壳体中的电极组件的正极接合的正极头固定部件，其中，所述安全部件通过内部压力增加而被破坏并与所述正插头固定部件分离 电池盒。

    Image forming cartridge mounting structure for image forming apparatus
    2.
    发明授权
    Image forming cartridge mounting structure for image forming apparatus 有权
    用于图像形成装置的成像盒安装结构

    公开(公告)号：US08208831B2

    公开(公告)日：2012-06-26

    申请号：US12542875

    申请日：2009-08-18

    申请人： Hyun-woo Kim

    发明人： Hyun-woo Kim

    IPC分类号： G03G21/16

    CPC分类号： G03G21/1853

    摘要： An image forming apparatus that includes a main body housing formed with an opening, a main body frame coupled to the main body housing, an image forming cartridge mounted to the main body frame via the opening, and a cartridge supporting member which includes a supporting member main body formed integrally with the main body frame, and a supporting part formed in the supporting main body to elastically support the image forming cartridge with respect to the main body frame, so that the image forming cartridge can be mounted to the main body frame as the supporting member main body elastically moves to a cutting part formed in a part of the main body frame adjacent to the supporting member main body when the supporting part is pressed by the image forming cartridge.

    摘要翻译： 一种图像形成装置，包括形成有开口的主体壳体，连接到主体壳体的主体框架，经由开口安装到主体框架的图像形成盒;以及盒支撑构件，其包括支撑构件 主体与主体框架一体地形成，并且支撑部形成在支撑主体中，以相对于主体框架弹性地支撑图像形成盒，使得图像形成盒可以安装到主体框架作为 当支撑部件被图像形成盒按压时，支撑构件主体弹性移动到形成在主体框架的与支撑构件主体相邻的一部分中的切割部分。

    Image retrieval method and apparatus using iterative matching
    4.
    发明授权
    Image retrieval method and apparatus using iterative matching 有权
    使用迭代匹配的图像检索方法和装置

    公开(公告)号：US07298931B2

    公开(公告)日：2007-11-20

    申请号：US10650964

    申请日：2003-08-29

    申请人： Hyun-woo Kim ,  Tae-kyun Kim ,  Won-jun Hwang ,  Seok-cheol Kee

    发明人： Hyun-woo Kim ,  Tae-kyun Kim ,  Won-jun Hwang ,  Seok-cheol Kee

    IPC分类号： G06K9/60

    CPC分类号： G06F17/30247 ,  G06K9/6857

    摘要： An image retrieval method and apparatus using iterative matching are provided. The method comprises: (a) extracting K similar images in order of matching rank by retrieving N reference images stored in an image database through comparison between a query image selected by a user and the reference images; and (b) performing iterative matching for M similar images, which are ranked higher and selected from the K similar images, with a predetermined frequency, and rearranging the matching ranks of the M similar images. According to the method and apparatus, among similar images retrieved by using a query image selected by a user, M similar images that are ranked higher are selected, and by performing iterative matching for the M similar images using the high-ranked similar image, M similar images are rearranged in order of similarity and output. Accordingly, accuracy of the matching can improve greatly and a load to the retrieval engine due to iterative retrieval can be minimized.

    摘要翻译： 提供了使用迭代匹配的图像检索方法和装置。 该方法包括：（a）通过比较由用户选择的查询图像和参考图像，通过检索存储在图像数据库中的N个参考图像来提取匹配等级的K个相似图像; 和（b）以预定频率对从K个相似图像中排名较高并且选择的M个相似图像执行迭代匹配，并重新排列M个相似图像的匹配等级。 根据该方法和装置，在通过使用用户选择的查询图像检索的相似图像中，选择M等级更高的相似图像，并且通过使用高排名相似图像对M个相似图像执行迭代匹配，M 类似的图像按照相似性和输出的顺序重新排列。 因此，匹配的准确性可以大大提高，并且可以最小化由于迭代检索引起的对检索引擎的负担。

    Mask patterns for semiconductor device fabrication and related methods and structures
    6.
    发明申请
    Mask patterns for semiconductor device fabrication and related methods and structures 失效
    半导体器件制造的掩模图案及相关方法和结构

    公开(公告)号：US20060063384A1

    公开(公告)日：2006-03-23

    申请号：US11232703

    申请日：2005-09-22

    申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    IPC分类号： G03F1/00 ,  H01L21/302

    CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

    摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

    摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。

    Photosensitive polymers and resist compositions comprising the photosensitive polymers
    8.
    发明授权
    Photosensitive polymers and resist compositions comprising the photosensitive polymers 失效
    包含光敏聚合物的光敏聚合物和抗蚀剂组合物

    公开(公告)号：US06787287B2

    公开(公告)日：2004-09-07

    申请号：US10103756

    申请日：2002-03-25

    申请人： Hyun-woo Kim ,  Sang-gyun Woo ,  Yool Kang

    发明人： Hyun-woo Kim ,  Sang-gyun Woo ,  Yool Kang

    IPC分类号： G03F7075

    CPC分类号： G03F7/0758 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115

    摘要： A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: where R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3; R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3; R3 is —H, —OH or —OCOCH3; R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.

    摘要翻译： 抗蚀剂组合物的光敏聚合物包括由下式表示的含硅烷基乙烯基醚和马来酸酐的共聚物：其中R1是-H，-OSi（CH3）2C（CH3）3或-OSi（CH3）3; R2是-H，-OH，-OCOCH3，-OSi（CH3）2C（CH3）3或-OSi（CH（CH3）2）3; R3是-H，-OH或-OCOCH3; R4是-H，-OSi（CH3）2C（CH3）3，-CH2OSi（CH3）2C（CH3）3或-CH2OSi（CH（CH3）2）3; R 1，R 2，R 3和R 4中的至少一个为含Si基团。

    Mask patterns for semiconductor device fabrication and related methods and structures
    10.
    发明授权
    Mask patterns for semiconductor device fabrication and related methods and structures 失效
    半导体器件制造的掩模图案及相关方法和结构

    公开(公告)号：US07855038B2

    公开(公告)日：2010-12-21

    申请号：US12042625

    申请日：2008-03-05

    申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

    IPC分类号： G03F9/00

    CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

    摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

    摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。