公开(公告)号：US5968275A

公开(公告)日：1999-10-19

申请号：US882222

申请日：1997-06-25

申请人： Changhun Lee ,  Vikram Singh ,  Yun-Yen Jack Yang

发明人： Changhun Lee ,  Vikram Singh ,  Yun-Yen Jack Yang

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23C16/00

CPC分类号： H01L21/02071 ,  H01J37/32633 ,  H01L21/31138

摘要： A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

摘要翻译： 一种等离子体处理系统，其配置用于在金属蚀刻之后处理衬底。 基板包括设置在其上的光致抗蚀剂层。 等离子体处理系统包括等离子体产生区域和设置在等离子体产生区域和衬底之间的挡板。 挡板包括设置在挡板中心区域的中央阻挡部分。 挡板还包括围绕中心阻塞部分的环形多孔部分。 环形多孔部分包括多个通孔，其构造成允许在等离子体产生区域中产生的H 2 O等离子体通过孔到达衬底的表面。 等离子体处理系统还包括设置在挡板下方以在处理期间支撑基板的卡盘。

公开(公告)号：US06080680A

公开(公告)日：2000-06-27

申请号：US994552

申请日：1997-12-19

申请人： Changhun Lee ,  Yun-Yen Jack Yang

发明人： Changhun Lee ,  Yun-Yen Jack Yang

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

CPC分类号： G03F7/427 ,  H01L21/31138

摘要： Methods and compositions for improving etch rate selectivity of photoresist to substrate material in a downstream microwave dry stripping process in the fabrication of semiconductor integrated (IC) circuits are provided. Significant improvement in selectivity is demonstrated with the addition of N.sub.2 to an etchant gas mixture of O.sub.2 and CF.sub.4.

摘要翻译： 提供了用于在制造半导体集成（IC）电路中的下游微波干剥离工艺中提高光致抗蚀剂对衬底材料的蚀刻速率选择性的方法和组合物。 通过向O2和CF4的蚀刻剂气体混合物中加入N2来证明选择性的显着改善。

公开(公告)号：US08278180B2

公开(公告)日：2012-10-02

申请号：US12871273

申请日：2010-08-30

申请人： Changhun Lee ,  Keemoon Chun

发明人： Changhun Lee ,  Keemoon Chun

IPC分类号： H01L21/331 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01L21/76823 ,  H01L21/76825 ,  H01L21/76828

摘要： A method of forming a semiconductor device having a contact structure includes forming an insulating layer on a semiconductor substrate, and selectively implanting impurity ions into a predetermined region of the insulating layer to generate lattice defects in the predetermined region of the insulating layer. A thermal treatment, such as quenching the insulating layer at a temperature change rate of at least −20° C./minute, is performed on the insulating layer having the lattice defects to accelerate generation of the lattice defects in the predetermined region such that a conductive region results from the generated lattice defects to provide current paths in the predetermined region.

摘要翻译： 形成具有接触结构的半导体器件的方法包括在半导体衬底上形成绝缘层，并且将杂质离子选择性地注入到绝缘层的预定区域中，以在绝缘层的预定区域中产生晶格缺陷。 对具有晶格缺陷的绝缘层进行热处理，例如以至少-20℃/分钟的温度变化率淬火绝缘层的热处理，以加速预定区域中的晶格缺陷的产生，使得 导电区域由所产生的晶格缺陷产生，以在预定区域中提供电流路径。

公开(公告)号：US20110151658A1

公开(公告)日：2011-06-23

申请号：US12871273

申请日：2010-08-30

申请人： Changhun Lee ,  Keemoon Chun

发明人： Changhun Lee ,  Keemoon Chun

IPC分类号： H01L21/768

CPC分类号： H01L21/76823 ,  H01L21/76825 ,  H01L21/76828

摘要： A method of forming a semiconductor device having a contact structure includes forming an insulating layer on a semiconductor substrate, and selectively implanting impurity ions into a predetermined region of the insulating layer to generate lattice defects in the predetermined region of the insulating layer. A thermal treatment, such as quenching the insulating layer at a temperature change rate of at least −20° C./minute, is performed on the insulating layer having the lattice defects to accelerate generation of the lattice defects in the predetermined region such that a conductive region results from the generated lattice defects to provide current paths in the predetermined region.

摘要翻译： 形成具有接触结构的半导体器件的方法包括在半导体衬底上形成绝缘层，并且将杂质离子选择性地注入到绝缘层的预定区域中，以在绝缘层的预定区域中产生晶格缺陷。 对具有晶格缺陷的绝缘层进行热处理，例如以至少-20℃/分钟的温度变化率淬火绝缘层的热处理，以加速预定区域中的晶格缺陷的产生，使得 导电区域由所产生的晶格缺陷产生，以在预定区域中提供电流路径。

公开(公告)号：US07807579B2

公开(公告)日：2010-10-05

申请号：US11737731

申请日：2007-04-19

申请人： Chan-Syun Yang ,  Changhun Lee

发明人： Chan-Syun Yang ,  Changhun Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/02063 ,  H01L21/31138 ,  H01L21/76814

摘要： An oxygen-free hydrogen plasma ashing process particularly useful for low-k dielectric materials based on hydrogenated silicon oxycarbide materials. The main ashing step includes exposing a previously etched dielectric layer to a plasma of hydrogen and optional nitrogen, a larger amount of water vapor, and a yet larger amount of argon or helium. Especially for porous low-k dielectrics, the main ashing plasma additionally contains a hydrocarbon gas such as methane. The main ashing may be preceded by a short surface treatment by a plasma of a hydrogen-containing reducing gas such as hydrogen and optional nitrogen.

摘要翻译： 无氧氢等离子体灰化处理特别适用于基于氢化碳氧化硅材料的低k电介质材料。 主灰化步骤包括将先前蚀刻的电介质层暴露于氢和任选的氮的等离子体，更大量的水蒸汽和更大量的氩或氦。 特别是对于多孔低k电介质，主要灰化等离子体还含有诸如甲烷的烃气。 之前可以通过诸如氢气和任选的氮气的含氢还原气体的等离子体进行短的表面处理。

公开(公告)号：US20090163033A1

公开(公告)日：2009-06-25

申请号：US11963432

申请日：2007-12-21

申请人： GUOWEN DING ,  Changhun Lee

发明人： GUOWEN DING ,  Changhun Lee

IPC分类号： H01L21/3065

CPC分类号： H01J37/32522 ,  H01J37/32091

摘要： Methods for extending service life of chamber components for semiconductor processing are provided. In one embodiment, the method includes maintaining a substrate support assembly disposed in a processing chamber at a first temperature, performing a first plasma process on a first substrate in the processing chamber while the substrate support is maintained at the first temperature, and raising the temperature of the substrate support assembly to a second temperature after completion of the first plasma process.

摘要翻译： 提供延长半导体加工用腔室部件使用寿命的方法。 在一个实施例中，该方法包括将设置在处理室中的基板支撑组件保持在第一温度，在处理室中的第一基板上执行第一等离子体处理，同时将基板支撑件保持在第一温度，并且升高温度 的基板支撑组件在第一等离子体处理完成之后达到第二温度。

公开(公告)号：US20130110355A1

公开(公告)日：2013-05-02

申请号：US13282244

申请日：2011-10-26

申请人： Dong-il CHO ,  Jaehong Park ,  Wonsang Hwang ,  Hyunil Kwon ,  Jong-hyeon Kim ,  Changhun Lee

发明人： Dong-il CHO ,  Jaehong Park ,  Wonsang Hwang ,  Hyunil Kwon ,  Jong-hyeon Kim ,  Changhun Lee

IPC分类号： G06F7/00

CPC分类号： G01S7/4026 ,  B60K31/0075 ,  B60W2520/14 ,  B60W2540/18 ,  G01S13/867 ,  G01S13/931 ,  G01S2007/403 ,  G01S2013/9321 ,  G01S2013/9325 ,  G01S2013/9353 ,  G01S2013/9375

摘要： Provided are a direction control system and a method of a radar system or a vision system mounted in a vehicle. The direction control system of the radar and vision system for a vehicle according to an embodiment includes: an inertial sensor system and a handle steering angle sensor system which detect posture and movement information regarding a vehicle; a control unit which generates a control signal on the basis of the posture and movement information regarding the vehicle detected by the inertial sensor system and the handle steering angle sensor system; first and second driving units which are driven according to the control signal of the control unit; and a radar system and a vision system which are respectively connected to the first and second driving units.

摘要翻译： 提供了一种方向控制系统和安装在车辆中的雷达系统或视觉系统的方法。 根据实施例的用于车辆的雷达和视觉系统的方向控制系统包括：惯性传感器系统和手柄转向角传感器系统，其检测关于车辆的姿势和运动信息; 控制单元，其基于由惯性传感器系统和手柄转向角传感器系统检测到的关于车辆的姿势和运动信息生成控制信号; 第一和第二驱动单元，其根据控制单元的控制信号被驱动; 以及分别连接到第一和第二驱动单元的雷达系统和视觉系统。

公开(公告)号：US20130032478A1

公开(公告)日：2013-02-07

申请号：US13649196

申请日：2012-10-11

申请人： Changhun Lee ,  Michael D. Willwerth ,  Hoan Nguyen

发明人： Changhun Lee ,  Michael D. Willwerth ,  Hoan Nguyen

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68735 ,  H01L21/68757

摘要： Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.

摘要翻译： 提供了一种用于等离子体处理室的盖环的实施例。 在一个实施例中，用于等离子体处理室的盖环包括由含钇（Y）的材料制成的环形主体。 主体包括具有内定位环和外定位环的底表面。 内定位环比外定位环更远离主体。 主体包括具有主壁和由基本上水平的平台分开的次级壁的内径壁。 身体还包括顶表面，其具有在顶点处会聚内倾斜表面的外倾斜顶表面。 内部倾斜表面与垂直于身体中心线的线形成小于约70度的角度。

公开(公告)号：USD642145S1

公开(公告)日：2011-07-26

申请号：US29381500

申请日：2010-12-20

申请人： Yeonjin Kim ,  Kyongtae Han ,  Changhun Lee ,  Yongho Lee

设计人： Yeonjin Kim ,  Kyongtae Han ,  Changhun Lee ,  Yongho Lee

公开(公告)号：US06767821B1

公开(公告)日：2004-07-27

申请号：US10426354

申请日：2003-04-07

申请人： Chan-syun David Yang ,  Ajay Kumar ,  Wei-Te Wu ,  Changhun Lee ,  Yeajer Arthur Chen ,  Katsuhisa Kugimiya

发明人： Chan-syun David Yang ,  Ajay Kumar ,  Wei-Te Wu ,  Changhun Lee ,  Yeajer Arthur Chen ,  Katsuhisa Kugimiya

IPC分类号： H01L214763

CPC分类号： H01L21/32137 ,  H01L21/32139 ,  H01L21/76838 ,  Y10S438/945

摘要： A method of fabricating an interconnect line comprises forming a wall, depositing an etch mask having a thickness that decreases towards a bottom of the wall, and isotropically etching the wall at the bottom to form the interconnect line having a pre-determined gap between the substrate and a bottom of the line.

摘要翻译： 制造互连线的方法包括形成壁，沉积具有朝向壁底部减小的厚度的蚀刻掩模，以及在底部各向同性蚀刻壁，以形成在衬底之间具有预定间隙的互连线 和底线。