公开(公告)号：US20230154824A1

公开(公告)日：2023-05-18

申请号：US18155322

申请日：2023-01-17

Applicant: Chee-Wee LIU ,  MEDIATEK INC.

Inventor： Ming-Tzong YANG ,  Hsien-Hsin LIN ,  Wen-Kai WAN ,  Chia-Che CHUNG ,  Chee-Wee LIU

IPC: H01L23/373 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L23/373 ,  H01L21/768 ,  H01L29/785 ,  H01L29/66795 ,  H01L2029/7858

Abstract: A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1and 1200 Wm−1K−1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.

公开(公告)号：US20090008736A1

公开(公告)日：2009-01-08

申请号：US11875287

申请日：2007-10-19

Applicant: Chee-Wee LIU ,  Chun-Hung LAI ,  Meng-kun CHEN ,  Wei-Shuo HO

Inventor： Chee-Wee LIU ,  Chun-Hung LAI ,  Meng-kun CHEN ,  Wei-Shuo HO

IPC: H01L31/0216 ,  H01L31/028

CPC classification number: H01L31/103 ,  H01L27/1446

Abstract: A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.

Abstract translation: 提供了一种用于光电检测的方法及其装置。 用于光检测的装置包括第一P-N二极管和第二P-N二极管。 第一PN二极管具有第一PN结，其具有第一厚度，当被光照射时，第一PN信号产生第一电信号，并且第二PN二极管具有第二PN结，第二PN结具有第二厚度，第二PN 当光照射时产生信号。 第二厚度大于第一厚度，并且进行第一电信号和第二电信号的操作以获得第三电信号。

公开(公告)号：US20080298410A1

公开(公告)日：2008-12-04

申请号：US11867514

申请日：2007-10-04

Applicant: Tzu-Huan CHENG ,  Cheng-Ting LEE ,  Wen-Wei HSU ,  Chee-Wee LIU

Inventor： Tzu-Huan CHENG ,  Cheng-Ting LEE ,  Wen-Wei HSU ,  Chee-Wee LIU

IPC: H01S5/00

CPC classification number: H01S5/30 ,  B82Y20/00 ,  H01S5/3009 ,  H01S5/3018 ,  H01S5/3027 ,  H01S5/3412

Abstract: A laser apparatus is provided. The laser apparatus includes at least one semiconductor layer having a first surface and a second surface and an insulator layer formed on the first surface of the at least one semiconductor layer, wherein the at least one semiconductor layer and the insulator form a laser cavity.

Abstract translation: 提供了一种激光装置。 所述激光装置包括至少一个具有第一表面和第二表面的半导体层和形成在所述至少一个半导体层的第一表面上的绝缘体层，其中所述至少一个半导体层和所述绝缘体形成激光腔。

公开(公告)号：US20140008726A1

公开(公告)日：2014-01-09

申请号：US13541751

申请日：2012-07-04

Applicant: Yu-Jen HSIAO ,  Ting-Jen HSUEH ,  Jia-Min SHIEH ,  Yu-Ming YEH ,  Chee-Wee LIU ,  Bau-Tong DAI ,  Fu-Liang YANG

Inventor： Yu-Jen HSIAO ,  Ting-Jen HSUEH ,  Jia-Min SHIEH ,  Yu-Ming YEH ,  Chee-Wee LIU ,  Bau-Tong DAI ,  Fu-Liang YANG

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/34 ,  H01L27/142 ,  H01L29/045 ,  H01L31/0322 ,  H01L31/078 ,  H01L31/1804 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor structure fabricating method includes the following steps. Firstly, a silicon substrate is provided. The silicon substrate has a first surface and a second surface. In addition, a first semiconductor structure is formed on the first surface of the silicon substrate. Then, the second surface of the silicon substrate is textured as a rough surface. Then, a first electrode layer is formed on the rough surface.

Abstract translation: 半导体结构制造方法包括以下步骤。 首先，提供硅基板。 硅衬底具有第一表面和第二表面。 此外，在硅衬底的第一表面上形成第一半导体结构。 然后，硅衬底的第二表面作为粗糙表面被纹理化。 然后，在粗糙表面上形成第一电极层。

公开(公告)号：US20130168696A1

公开(公告)日：2013-07-04

申请号：US13458926

申请日：2012-04-27

Applicant: Hui-Hsuan WANG ,  Hao-Chen HUANG ,  Chee-Wee LIU

Inventor： Hui-Hsuan WANG ,  Hao-Chen HUANG ,  Chee-Wee LIU

IPC: H01L29/161 ,  H01L21/329

CPC classification number: H01L29/66143 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/872

Abstract: A silicon carbide Schottky diode device with mesa terminations and the manufacturing method thereof are provided. The silicon carbide Schottky diode device includes an n-type epitaxial silicon carbide layer with mesa terminations on an n-type silicon carbide substrate, two p-type regions in the n-type epitaxial silicon carbide layer and a Schottky metal contact on the n-type epitaxial silicon carbide layer and the p-type regions, a dielectric layer on sidewalls and planes of the mesa terminations.

Abstract translation: 提供具有台面端接的碳化硅肖特基二极管器件及其制造方法。 碳化硅肖特基二极管器件包括在n型碳化硅衬底上具有台面端接的n型外延碳化硅层，n型外延碳化硅层中的两个p型区域和n型外延碳化硅层上的肖特基金属接触， 型外延碳化硅层和p型区域，在台面的侧壁和平面上的介电层。

公开(公告)号：US20080290468A1

公开(公告)日：2008-11-27

申请号：US11937217

申请日：2007-11-08

Applicant: Chee-Wee LIU ,  Y. -T. CHIANG ,  M. H. LEE ,  Y. DENG

Inventor： Chee-Wee LIU ,  Y. -T. CHIANG ,  M. H. LEE ,  Y. DENG

IPC: H01L23/00 ,  H01L21/00

CPC classification number: H01L31/0392 ,  H01L29/7849 ,  H01L31/03926 ,  H01L31/1808 ,  H01L31/1896 ,  H01L33/48 ,  Y02E10/50

Abstract: A method for producing a flexible electronic device is provided. The method comprises steps of providing a flexible substrate, forming an inorganic film on the flexible substrate and etching the inorganic film to obtain an electronic element of the electronic device. In another aspect, a flexible electronic device is provided. The flexible electronic device comprises a flexible substrate and an inorganic film disposed on the flexible substrate and having an electronic element, wherein the electronic element is formed by etching the inorganic film.

Abstract translation: 提供了一种用于制造柔性电子装置的方法。 该方法包括提供柔性基板，在柔性基板上形成无机膜并蚀刻无机膜以获得电子器件的电子元件的步骤。 另一方面，提供一种柔性电子装置。 柔性电子装置包括柔性基板和设置在柔性基板上并具有电子元件的无机膜，其中通过蚀刻无机膜形成电子元件。

公开(公告)号：US20080145979A1

公开(公告)日：2008-06-19

申请号：US11951808

申请日：2007-12-06

Applicant: Ching-Fang HUANG ,  Chee-Zxiang LIU ,  Chee-Wee LIU

Inventor： Ching-Fang HUANG ,  Chee-Zxiang LIU ,  Chee-Wee LIU

IPC: H01L21/336

CPC classification number: H01L29/78603 ,  H01L29/66757 ,  H01L29/7842 ,  H01L29/78666 ,  H01L29/78675

Abstract: A method for changing a characteristic of a thin film transistor (TFT) is provided. The method comprises the steps of (1) providing a substrate; (2) forming the TFT having a channel on the substrate; (3) providing a pressure source; and (4) causing the pressure source to form a strain on the channel. The method for changing the characteristic of the TFT can further raise the operational speed thereof.

Abstract translation: 提供了一种用于改变薄膜晶体管（TFT）的特性的方法。 该方法包括以下步骤：（1）提供衬底; （2）在基板上形成具有沟道的TFT; （3）提供压力源; 和（4）使压力源在通道上形成应变。 用于改变TFT的特性的方法可进一步提高其操作速度。