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18 条记录 (耗时 0.048 秒)

    Method of reducing the pattern effect in the CMP process
    3.
    发明授权
    Method of reducing the pattern effect in the CMP process 有权
    降低CMP工艺中图案效果的方法

    公开(公告)号：US07183199B2

    公开(公告)日：2007-02-27

    申请号：US10724201

    申请日：2003-12-01

    申请人： Chi-Wen Liu ,  Jung-Chih Tsao ,  Shien-Ping Feng ,  Kei-Wei Chen ,  Shih-Chi Lin ,  Ray Chuang

    发明人： Chi-Wen Liu ,  Jung-Chih Tsao ,  Shien-Ping Feng ,  Kei-Wei Chen ,  Shih-Chi Lin ,  Ray Chuang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/3212 ,  H01L21/7684

    摘要： A method of reducing the pattern effect in the CMP process. The method comprises the steps of providing a semiconductor substrate having a patterned dielectric layer, a barrier layer on the patterned dielectric layer, and a conductive layer on the barrier layer; performing a first CMP process to remove part of the conductive layer before the barrier layer is polished, thereby a step height of the conductive layer is reduced; depositing a layer of material substantially the same as the conductive layer on the conductive layer; and performing a second CMP process to expose the dielectric layer. A method of eliminating the dishing phenomena after a CMP process and a CMP rework method are also provided.

    摘要翻译： 降低CMP工艺中图案效果的方法。 该方法包括以下步骤：提供具有图案化介电层的半导体衬底，图案化电介质层上的阻挡层和阻挡层上的导电层; 在阻挡层被抛光之前执行第一CMP工艺以去除导电层的一部分，从而降低导电层的台阶高度; 在导电层上沉积与导电层基本相同的材料层; 以及执行第二CMP工艺以暴露所述电介质层。 还提供了在CMP处理和CMP返工方法之后消除凹陷现象的方法。

    Novel method to reduce Rs pattern dependence effect
    4.
    发明申请
    Novel method to reduce Rs pattern dependence effect 有权
    降低Rs模式依赖效应的新方法

    公开(公告)号：US20050085066A1

    公开(公告)日：2005-04-21

    申请号：US10687183

    申请日：2003-10-16

    申请人： Jung-Chih Tsao ,  Chi-Wen Li ,  Kei-Wei Chen ,  Jye-Wei Hsu ,  Hsien-Pin Fong ,  Steven Lin ,  Ray Chuang

    发明人： Jung-Chih Tsao ,  Chi-Wen Li ,  Kei-Wei Chen ,  Jye-Wei Hsu ,  Hsien-Pin Fong ,  Steven Lin ,  Ray Chuang

    IPC分类号： H01L21/22 ,  H01L21/288 ,  H01L21/38 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/76877 ,  H01L21/288 ,  H01L21/7684

    摘要： A method of forming a copper interconnect in an opening within a pattern is described. The copper interconnect has an Rs that is nearly independent of opening width and pattern density. A first copper layer having a concave upper surface and thickness t1 is formed in a via or trench in a dielectric layer by depositing copper and performing a first CMP step. A second copper layer with a thickness t2 where t2≦t1 and having a convex lower surface is deposited on the first copper layer by a selective electroplating method. The first and second copper layers are annealed and then a second CMP step planarizes the second copper layer to become coplanar with the dielectric layer. The invention is also a copper interconnect comprised of the aforementioned copper layers where the first copper layer has a grain density (GD1)≧GD2 for the second copper layer.

    摘要翻译： 描述了在图案内的开口中形成铜互连的方法。 铜互连具有几乎独立于开口宽度和图案密度的Rs。 通过沉积铜并执行第一CMP步骤，在电介质层中的通孔或沟槽中形成具有凹上表面和厚度t 1的第一铜层。 具有厚度为2 的第二铜层，其中具有凸下表面的第二铜层沉积在第一铜层上 通过选择性电镀方法。 对第一和​​第二铜层进行退火，然后第二CMP步骤将第二铜层平坦化成与电介质层共面。 本发明也是由上述铜层构成的铜布线，其中第一铜层具有第二铜层的晶粒密度（G SUB D1）= G D2 D2。

    Method of reducing oxygen content in ECP solution
    5.
    发明申请
    Method of reducing oxygen content in ECP solution 审中-公开
    降低ECP溶液中氧含量的方法

    公开(公告)号：US20080067076A1

    公开(公告)日：2008-03-20

    申请号：US11523135

    申请日：2006-09-19

    申请人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

    发明人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

    IPC分类号： C25D3/00

    CPC分类号： C25D3/02 ,  C02F3/34

    摘要： A novel method, which is suitable to substantially reduce the presence of oxygen micro-bubbles in an electroplating bath solution, is disclosed. The method includes the addition of aerobic bacteria to the electroplating bath solution to consume oxygen in the solution. Reduction of the oxygen content in the electroplating bath solution prevents oxygen micro-bubbles from forming in the solution and becoming trapped between the solution and the surface of a metal seed layer on a substrate to block the electroplating of a metal film onto the seed layer. Consequently, the presence of surface pits and other structural defects in the surface of the electroplated metal film is substantially reduced.

    摘要翻译： 公开了一种适合于显着减少电镀浴液中氧微气泡存在的新方法。 该方法包括向电镀浴溶液中加入需氧细菌以消耗溶液中的氧气。 电镀浴溶液中的氧含量的降低防止溶液中形成氧微气泡并被困在溶液与基底上的金属种子层的表面之间，以阻止金属膜在种子层上的电镀。 因此，电镀金属膜的表面中存在表面凹坑等结构缺陷。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    6.
    发明授权
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 失效
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US07030016B2

    公开(公告)日：2006-04-18

    申请号：US10812729

    申请日：2004-03-30

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层 - 过度填充沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    7.
    发明申请
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 失效
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US20050227479A1

    公开(公告)日：2005-10-13

    申请号：US10812729

    申请日：2004-03-30

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/311 ,  H01L21/768

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层 - 过度填充沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Thrust pad assembly for ECP system
    8.
    发明申请
    Thrust pad assembly for ECP system 审中-公开
    ECP系统的推力垫组件

    公开(公告)号：US20050121329A1

    公开(公告)日：2005-06-09

    申请号：US10731331

    申请日：2003-12-05

    申请人： Jung-Chih Tsao ,  Kei-Wei Chen ,  Chi-Wen Liu ,  Shi-Chi Lin ,  Ray Chuang

    发明人： Jung-Chih Tsao ,  Kei-Wei Chen ,  Chi-Wen Liu ,  Shi-Chi Lin ,  Ray Chuang

    IPC分类号： C25D5/02 ,  C25D5/06 ,  C25D7/12 ,  C25D17/14 ,  H01L21/288

    CPC分类号： H01L21/2885 ,  C25D5/06 ,  C25D17/001 ,  C25D17/14

    摘要： A thrust pad assembly which is capable of reducing the quantity of metal electroplated onto the edge region of a substrate to eliminate or reduce the need for edge bevel cleaning or removal of excess metal from the substrate after the electroplating process. The thrust pad assembly includes an air platen through which air is applied at variable pressures to the central and edge regions, respectively, of a thrust pad. The thrust pad applies pressure to a contact ring connected to an electroplating voltage source. The contact ring applies relatively less pressure to the edge region than to the central region of the substrate, thereby reducing the ohmic contact.

    摘要翻译： 一种止推垫组件，其能够减少电镀到基板的边缘区域上的金属的量，以消除或减少在电镀工艺之后边缘斜面清洁或从基板上去除多余的金属的需要。 推力垫组件包括空气压板，空气压板分别通过空气压板以可变的压力施加到推力垫的中心和边缘区域。 推力垫对连接到电镀电压源的接触环施加压力。 接触环对边缘区域的压力相对于衬底的中心区域施加相对较小的压力，由此减小欧姆接触。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    10.
    发明授权
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US07432192B2

    公开(公告)日：2008-10-07

    申请号：US11347946

    申请日：2006-02-06

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。