公开(公告)号：US09509777B2

公开(公告)日：2016-11-29

申请号：US14257001

申请日：2014-04-21

Applicant: Ching-Ming Lee ,  Chi-Bin Li

Inventor： Ching-Ming Lee ,  Chi-Bin Li

IPC: H04L29/08 ,  H04L29/06

CPC classification number: H04L67/141 ,  H04L65/10 ,  H04L65/1066

Abstract: A connection method and a management server are provided. Each electronic apparatus detects connection behavior supported by a network, where the electronic apparatus is located, through the management server and accordingly generates a corresponding connection profile and stores it to the management server. The management server reads two connection profiles corresponding to two electronic apparatuses when the management server receives a connection request desired to connect from one of the electronic apparatuses to another one, and dynamically adjusts a plurality of connection detection procedures based on a connection success/failure record. The management server tests the connection detection procedures to determine whether a connection can be established between the two electronic apparatuses so as to obtain a session profile for establishing the connection.

Abstract translation: 提供连接方法和管理服务器。 每个电子设备通过管理服务器检测由电子设备所在的网络支持的连接行为，并且相应地生成对应的连接简档并将其存储到管理服务器。 管理服务器在管理服务器收到希望从电子设备之一连接的连接请求到另一电子设备时，读取与两个电子设备对应的两个连接简档，并且基于连接成功/失败记录来动态地调整多个连接检测过程 。 管理服务器测试连接检测过程以确定是否可以在两个电子设备之间建立连接，以便获得用于建立连接的会话简档。

公开(公告)号：US20140324950A1

公开(公告)日：2014-10-30

申请号：US14257001

申请日：2014-04-21

Applicant: Ching-Ming Lee ,  Chi-Bin Li

Inventor： Ching-Ming Lee ,  Chi-Bin Li

IPC: H04L29/06

CPC classification number: H04L67/141 ,  H04L65/10 ,  H04L65/1066

Abstract: A connection method and a management server are provided. Each electronic apparatus detects connection behavior supported by a network, where the electronic apparatus is located, through the management server and accordingly generates a corresponding connection profile and stores it to the management server. The management server reads two connection profiles corresponding to two electronic apparatuses when the management server receives a connection request desired to connect from one of the electronic apparatuses to another one, and dynamically adjusts a plurality of connection detection procedures based on a connection success/failure record. The management server tests the connection detection procedures to determine whether a connection can be established between the two electronic apparatuses so as to obtain a session profile for establishing the connection.

Abstract translation: 提供连接方法和管理服务器。 每个电子设备通过管理服务器检测由电子设备所在的网络支持的连接行为，并且相应地生成对应的连接简档并将其存储到管理服务器。 管理服务器在管理服务器收到希望从电子设备之一连接的连接请求到另一电子设备时，读取与两个电子设备对应的两个连接简档，并且基于连接成功/失败记录来动态地调整多个连接检测过程 。 管理服务器测试连接检测过程以确定是否可以在两个电子设备之间建立连接，以便获得用于建立连接的会话简档。

公开(公告)号：US09998141B2

公开(公告)日：2018-06-12

申请号：US14583788

申请日：2014-12-29

Applicant: Chi-Bin Li ,  Ching-Ming Lee

Inventor： Chi-Bin Li ,  Ching-Ming Lee

IPC: G06F15/16 ,  H03M7/30 ,  H04N1/32 ,  H04L29/08

CPC classification number: H03M7/3064 ,  H03M7/3091 ,  H04L67/04 ,  H04N1/32277

Abstract: A method and a system for transmitting data are provided. In a source apparatus, original data is divided into a plurality of source segments, a similarity calculation is performed for each of the source segments to obtain a similarity set, and the similarity set is transmitted to a target apparatus. In the target apparatus, whether a target segment corresponding to the source segment exists in the target apparatus is determined according to the similarity set to obtain a comparison result, and the comparison result is transmitted to the source apparatus. In the source apparatus, after the original data is dehydrated according to the comparison result to obtain dehydration data, the dehydration data is transmitted to the target apparatus. In the target apparatus, the dehydration data is rehydrated to the original data.

公开(公告)号：US20160165012A1

公开(公告)日：2016-06-09

申请号：US14583788

申请日：2014-12-29

Applicant: Chi-Bin Li ,  Ching-Ming Lee

Inventor： Chi-Bin Li ,  Ching-Ming Lee

IPC: H04L29/06 ,  H03M7/30

CPC classification number: H03M7/3064 ,  H03M7/3091 ,  H04L67/04 ,  H04N1/32277

Abstract: A method and a system for transmitting data are provided. In a source apparatus, original data is divided into a plurality of source segments, a similarity calculation is performed for each of the source segments to obtain a similarity set, and the similarity set is transmitted to a target apparatus. In the target apparatus, whether a target segment corresponding to the source segment exists in the target apparatus is determined according to the similarity set to obtain a comparison result, and the comparison result is transmitted to the source apparatus. In the source apparatus, after the original data is dehydrated according to the comparison result to obtain dehydration data, the dehydration data is transmitted to the target apparatus. In the target apparatus, the dehydration data is rehydrated to the original data.

Abstract translation: 提供了一种用于发送数据的方法和系统。 在源装置中，将原始数据分割为多个源片段，对每个源片段进行相似度计算，以获得相似度集合，并将相似度集合发送到目标装置。 在目标装置中，根据相似性确定目标装置中是否存在与源段对应的目标段，以获得比较结果，并将比较结果发送到源装置。 在源装置中，在根据比较结果对原始数据进行脱水以获得脱水数据之后，将脱水数据发送到目标装置。 在目标装置中，将脱水数据再水化为原始数据。

公开(公告)号：US06413817B1

公开(公告)日：2002-07-02

申请号：US09971542

申请日：2001-10-05

Applicant: Wunn-Shien Liao ,  Ching-Ming Lee ,  Ky Yang

Inventor： Wunn-Shien Liao ,  Ching-Ming Lee ,  Ky Yang

IPC: H01L218242

CPC classification number: H01L27/10855 ,  H01L28/84 ,  H01L28/91 ,  Y10S438/964

Abstract: A method of forming a self-aligned stacked capacitor on a substrate having a first insulation layer thereon. A bit line contact and a first section node contact are formed in the first insulation layer, and then a bit line structure is formed over the first insulation layer. The bit line structure includes a bit line, a cap layer and spacers. The bit line and the bit line contact are electrically connected. The cap layer is formed above the bit line while the spacers are formed on the sidewalls of the bit line and the cap layer. A second insulation layer, an etching stop layer and a third insulation layer are sequentially formed over the substrate. An opening is formed in the third insulation layer, the etching stop layer and the second insulation layer to expose a portion of the bit line structure and the first section node contact. A conformal first conductive layer is formed over the interior surface of the opening. The first conductive layer forms a second section node contact as well as a crown-shaped lower electrode. Finally, a conformal dielectric layer and a second conductive layer are sequentially formed over the substrate. The second conductive layer forms the upper electrode of the crown-shaped capacitor.

公开(公告)号：US08592905B2

公开(公告)日：2013-11-26

申请号：US13169008

申请日：2011-06-26

Applicant: Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

Inventor： Shih-Chieh Pu ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chih-Chung Wang ,  Ke-Feng Lin

IPC: H01L29/66

CPC classification number: H01L29/8611 ,  H01L27/0255 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/36

Abstract: A high-voltage semiconductor device is disclosed. The HV semiconductor device includes: a substrate; a well of first conductive type disposed in the substrate; a first doping region of second conductive type disposed in the p-well; a first isolation structure disposed in the well of first conductive type and surrounding the first doping region of second conductive type; and a first drift ring of second conductive type disposed between the first doping region of second conductive type and the first isolation structure.

Abstract translation: 公开了一种高压半导体器件。 HV半导体装置包括：基板; 设置在基板中的第一导电类型的阱; 布置在p阱中的第二导电类型的第一掺杂区; 第一隔离结构，设置在第一导电类型的阱中，并且包围第二导电类型的第一掺杂区; 以及设置在第二导电类型的第一掺杂区域和第一隔离结构之间的第二导电类型的第一漂移环。

公开(公告)号：US07709908B2

公开(公告)日：2010-05-04

申请号：US11836785

申请日：2007-08-10

Applicant: Chao-Yuan Su ,  Wei-Lun Hsu ,  Ching-Ming Lee ,  Chih-Jen Huang ,  Te-Yuan Wu ,  Chun-Hsiung Peng

Inventor： Chao-Yuan Su ,  Wei-Lun Hsu ,  Ching-Ming Lee ,  Chih-Jen Huang ,  Te-Yuan Wu ,  Chun-Hsiung Peng

IPC: H01L29/78

CPC classification number: H01L29/7835 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/404 ,  H01L29/42368

Abstract: A high-voltage transistor device has a substrate, an isolation structure, a source, a gate, a drain, a plurality of doped regions, a plurality of ion wells, and a first dielectric layer disposed on the substrate. The high-voltage transistor device further has a first conductive layer and a plurality of first field plate rings. The first conductive layer is electrically connected to the drain and at least one of the first field plate rings.

Abstract translation: 高压晶体管器件具有衬底，隔离结构，源极，栅极，漏极，多个掺杂区域，多个离子阱以及设置在衬底上的第一介电层。 高压晶体管器件还具有第一导电层和多个第一场板环。 第一导电层电连接到漏极和至少一个第一场板环。

公开(公告)号：US20090111252A1

公开(公告)日：2009-04-30

申请号：US11928133

申请日：2007-10-30

Applicant: Chih-Jen Huang ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chao-Yuan Su ,  Chun-Hsiung Peng

Inventor： Chih-Jen Huang ,  Ching-Ming Lee ,  Wei-Lun Hsu ,  Chao-Yuan Su ,  Chun-Hsiung Peng

IPC: H01L21/265

CPC classification number: H01L29/0847 ,  H01L21/2253 ,  H01L21/266 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7835

Abstract: A method of fabricating a deep well region of a high voltage device is provided. The method includes designating a deep well region that includes a designated highly doped region and a designed scarcely doped region in a substrate. A mask layer, which covers a periphery of the designated deep well region, is formed over the substrate, wherein the mask layer includes a plurality of shielding parts to cover a portion of the designated scarcely doped region. Using the mask layer as an implantation mask, an ion implantation process is performed to implant dopants into the substrate exposed by the mask and to form a plurality of undoped regions in the designated scarcely doped region covered by the shielding parts. The dopants in the designated scarcely doped region are then induced to diffuse to the undoped regions.

Abstract translation: 提供一种制造高压器件的深阱区域的方法。 该方法包括指定深阱区域，其包括指定的高掺杂区域和在衬底中设计的几乎不掺杂的区域。 覆盖指定的深阱区域的周边的掩模层形成在衬底上，其中掩模层包括多个屏蔽部分以覆盖指定的几乎不掺杂区域的一部分。 使用掩模层作为注入掩模，执行离子注入工艺以将掺杂剂注入到由掩模暴露的衬底中，并在由屏蔽部分覆盖的指定的几乎不掺杂的区域中形成多个未掺杂的区域。 然后诱导指定的稀少掺杂区域中的掺杂剂扩散到未掺杂的区域。

公开(公告)号：US06570145B2

公开(公告)日：2003-05-27

申请号：US09847684

申请日：2001-05-02

Applicant: Chin-Wen Huang ,  Jian-Bin Shiu ,  Ching-Ming Lee

Inventor： Chin-Wen Huang ,  Jian-Bin Shiu ,  Ching-Ming Lee

IPC: H01L2700

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14687

Abstract: A phase grating image-sensing device. The device includes a plurality of photodiodes, a smoothing layer, a color filter layer and a plurality of phase gratings. The photodiodes are formed on a substrate and isolated from each other by isolation structures. The smoothing layer covers the photodiodes and the isolation structures. The color filter layer is embedded within the smoothing layer forming a sandwich structure with the smoothing layer. The phase gratings are formed over the smoothing layer positioned at corresponding locations above isolation structures. The phase grating layers produce a constructive interference of light passing through the smoothing layer.

公开(公告)号：US08435652B2

公开(公告)日：2013-05-07

申请号：US12499802

申请日：2009-07-09

Applicant: Te-Ho Wu ,  Lin-Hsiu Ye ,  Ching-Ming Lee

Inventor： Te-Ho Wu ,  Lin-Hsiu Ye ,  Ching-Ming Lee

IPC: H01F10/08

CPC classification number: G11B5/66 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/84 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01F41/307 ,  Y10T428/1107 ,  Y10T428/115

Abstract: A magnetic stack structure is disclosed. The magnetic stack structure includes two metal layers and a free layer sandwiched by the two metal layers. The thickness of the free layer is 1-30 nm. The thickness of the metal layers are 0.1-20 nm respectively.

Abstract translation: 公开了磁栈结构。 磁性堆叠结构包括两个金属层和夹在两个金属层之间的自由层。 自由层的厚度为1-30nm。 金属层的厚度分别为0.1-20nm。