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    Motor driving system
    1.
    发明授权
    Motor driving system 失效
    电机驱动系统

    公开(公告)号：US07671554B2

    公开(公告)日：2010-03-02

    申请号：US11958987

    申请日：2007-12-18

    申请人： Chia-Chang Lin ,  Chih-Hsun Lin

    发明人： Chia-Chang Lin ,  Chih-Hsun Lin

    IPC分类号： H02P6/00

    CPC分类号： G05B19/19 ,  G05B2219/37415 ,  G05B2219/50133 ,  Y10S388/937

    摘要： The present invention relates to a motor driving system. The motor driving system includes a motor, a transmission member, a follower member, a position-detecting light emitter, a position-detecting light receiver, and a positioning-status sensing element. The positioning-status sensing element includes a plurality of notches or openings. The positioning-status sensing element is moved between the position-detecting light emitter and the position-detecting light receiver such that a light beam emitted from the position-detecting light emitter is successively penetrated through the notches or openings to be received by the position-detecting light receiver. According to the light-receiving status of the position-detecting light receiver, the speed of the motor is reduced.

    摘要翻译： 电动机驱动系统技术领域本发明涉及电动机驱动系统。 马达驱动系统包括马达，传动部件，从动部件，位置检测光发射器，位置检测光接收器和定位状态检测元件。 定位状态检测元件包括多个凹口或开口。 定位状态检测元件在位置检测光发射器和位置检测光接收器之间移动，使得从位置检测光发射器发射的光束依次穿过缺口或开口， 检测光接收器。 根据位置检测光接收器的光接收状态，电动机的速度降低。

    MOTOR DRIVING SYSTEM
    2.
    发明申请
    MOTOR DRIVING SYSTEM 失效
    电机驱动系统

    公开(公告)号：US20090108787A1

    公开(公告)日：2009-04-30

    申请号：US11958987

    申请日：2007-12-18

    申请人： Chia-Chang Lin ,  Chih-Hsun Lin

    发明人： Chia-Chang Lin ,  Chih-Hsun Lin

    IPC分类号： H02P6/00

    CPC分类号： G05B19/19 ,  G05B2219/37415 ,  G05B2219/50133 ,  Y10S388/937

    摘要： The present invention relates to a motor driving system. The motor driving system includes a motor, a transmission member, a follower member, a position-detecting light emitter, a position-detecting light receiver, and a positioning-status sensing element. The positioning-status sensing element includes a plurality of notches or openings. The positioning-status sensing element is moved between the position-detecting light emitter and the position-detecting light receiver such that a light beam emitted from the position-detecting light emitter is successively penetrated through the notches or openings to be received by the position-detecting light receiver. According to the light-receiving status of the position-detecting light receiver, the speed of the motor is reduced.

    摘要翻译： 电动机驱动系统技术领域本发明涉及一种电动机驱动系统。 马达驱动系统包括马达，传动部件，从动部件，位置检测光发射器，位置检测光接收器和定位状态检测元件。 定位状态检测元件包括多个凹口或开口。 定位状态检测元件在位置检测光发射器和位置检测光接收器之间移动，使得从位置检测光发射器发射的光束依次穿过缺口或开口， 检测光接收器。 根据位置检测光接收器的光接收状态，电动机的速度降低。

    Semiconductor process
    3.
    发明授权
    Semiconductor process 有权
    半导体工艺

    公开(公告)号：US08647986B2

    公开(公告)日：2014-02-11

    申请号：US13220692

    申请日：2011-08-30

    申请人： Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chun-Wei Hsu ,  Yen-Ming Chen ,  Chih-Hsun Lin ,  Chang-Hung Kung

    发明人： Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chun-Wei Hsu ,  Yen-Ming Chen ,  Chih-Hsun Lin ,  Chang-Hung Kung

    IPC分类号： H01L21/306 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/768

    CPC分类号： H01L21/3212 ,  H01L21/3105 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/7684 ,  H01L21/823835 ,  H01L29/665

    摘要： A semiconductor process includes the following steps. A first gate structure and a second gate structure are formed on a substrate, wherein the top of the first gate structure includes a cap layer, so that the vertical height of the first gate structure is higher than the vertical height of the second gate structure. An interdielectric layer is formed on the substrate. A first chemical mechanical polishing process is performed to expose the top surface of the cap layer. A second chemical mechanical polishing process is performed to expose the top surface of the second gate structure or an etching process is performed to remove the interdielectric layer located on the second gate structure. A second chemical mechanical polishing process is then performed to remove the cap layer.

    摘要翻译： 半导体工艺包括以下步骤。 第一栅极结构和第二栅极结构形成在基板上，其中第一栅极结构的顶部包括盖层，使得第一栅极结构的垂直高度高于第二栅极结构的垂直高度。 在基板上形成介电层。 执行第一化学机械抛光工艺以暴露盖层的顶表面。 执行第二化学机械抛光工艺以暴露第二栅极结构的顶表面，或执行蚀刻工艺以去除位于第二栅极结构上的介电层。 然后执行第二化学机械抛光工艺以除去盖层。

    Method and system for modifying doped region design layout during mask preparation to tune device performance
    6.
    发明授权
    Method and system for modifying doped region design layout during mask preparation to tune device performance 有权
    在掩模准备期间修改掺杂区域设计布局以调整器件性能的方法和系统

    公开(公告)号：US08527915B2

    公开(公告)日：2013-09-03

    申请号：US13286410

    申请日：2011-11-01

    申请人： Mei-Hsuan Lin ,  Ling-Sung Wang ,  Chih-Hsun Lin ,  Chih-Kang Chao

    发明人： Mei-Hsuan Lin ,  Ling-Sung Wang ,  Chih-Hsun Lin ,  Chih-Kang Chao

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5068 ,  H01L21/26586 ,  H01L29/6659

    摘要： The present disclosure provides a method and system for modifying a doped region design layout during mask preparation to tune device performance. An exemplary method includes receiving an integrated circuit design layout designed to define an integrated circuit, wherein the integrated circuit design layout includes a doped feature layout; identifying an area of the integrated circuit for device performance modification, and modifying a portion of the doped feature layout that corresponds with the identified area of the integrated circuit during a mask preparation process, thereby providing a modified doped feature layout.

    摘要翻译： 本公开提供了一种用于在掩模准备期间修改掺杂区域设计布局以调谐设备性能的方法和系统。 一种示例性方法包括接收设计成定义集成电路的集成电路设计布局，其中集成电路设计布局包括掺杂特征布局; 识别用于器件性能修改的集成电路的区域，以及在掩模准备过程期间修改与所识别的集成电路的区域相对应的掺杂特征布局的一部分，从而提供修改的掺杂特征布局。

    Method of manufacturing a semiconductor device
    7.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08470660B2

    公开(公告)日：2013-06-25

    申请号：US13234296

    申请日：2011-09-16

    申请人： Mei-Hsuan Lin ,  Chih-Kang Chao ,  Chih-Hsun Lin ,  Ling-Sung Wang

    发明人： Mei-Hsuan Lin ,  Chih-Kang Chao ,  Chih-Hsun Lin ,  Ling-Sung Wang

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/8238 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/66636 ,  H01L29/7848

    摘要： A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.

    摘要翻译： 公开了制造半导体器件的方法。 该示例性方法包括提供具有源极区和漏极区的衬底。 该方法还包括在源极区域内的衬底中形成第一凹槽，以及在漏极区域内的衬底中形成第二凹部。 第一凹部具有第一多个表面，第二凹部具有第二多个表面。 该方法还包括在第一和第二凹陷中外延生长半导体材料，然后在衬底中形成浅隔离（STI）特征。

    Method of Manufacturing a Semiconductor Device
    8.
    发明申请
    Method of Manufacturing a Semiconductor Device 有权
    制造半导体器件的方法

    公开(公告)号：US20130071995A1

    公开(公告)日：2013-03-21

    申请号：US13234296

    申请日：2011-09-16

    申请人： Mei-Hsuan Lin ,  Chih-Kang Chao ,  Chih-Hsun Lin ,  Ling-Sung Wang

    发明人： Mei-Hsuan Lin ,  Chih-Kang Chao ,  Chih-Hsun Lin ,  Ling-Sung Wang

    IPC分类号： H01L21/762 ,  H01L21/76

    CPC分类号： H01L21/8238 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/66636 ,  H01L29/7848

    摘要： A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.

    摘要翻译： 公开了制造半导体器件的方法。 该示例性方法包括提供具有源极区和漏极区的衬底。 该方法还包括在源极区域内的衬底中形成第一凹槽，以及在漏极区域内的衬底中形成第二凹部。 第一凹部具有第一多个表面，第二凹部具有第二多个表面。 该方法还包括在第一和第二凹陷中外延生长半导体材料，然后在衬底中形成浅隔离（STI）特征。

    DISC HAVING RELIEF PATTERN AND TRANSPRINT METHOD THEREOF
    10.
    发明申请
    DISC HAVING RELIEF PATTERN AND TRANSPRINT METHOD THEREOF 有权
    具有缓解图案的盘片及其传输方法

    公开(公告)号：US20090017270A1

    公开(公告)日：2009-01-15

    申请号：US11930243

    申请日：2007-10-31

    申请人： Chih-Hsun Lin

    发明人： Chih-Hsun Lin

    IPC分类号： B41M5/00 ,  B05D3/12 ,  B31F1/07

    CPC分类号： B44C1/24 ,  G11B23/38 ,  G11B23/40 ,  Y10T428/21 ,  Y10T428/24802

    摘要： A disc having a relief pattern and a transprint method thereof are provided. The transprint method for transprinting the relief pattern on a substrate of the disc includes the following steps. First, a transprint template is provided. A first surface of the transprint template has a complementary pattern corresponding to the relief pattern. Next, a pattern layer is formed on the substrate. Then, the transprint template is placed on and covers the pattern layer until the first surface of the transprint template closely contacts a second surface of the pattern layer, so that the relief pattern is formed on the second surface. Afterward, the pattern layer is cured by irradiation. Later, the transprint template is removed for exposing the second surface with the relief pattern.

    摘要翻译： 提供具有浮雕图案的盘片及其转印方法。 用于将浮雕图案转印在盘的基片上的转印方法包括以下步骤。 首先，提供一个转印模板。 转印模板的第一表面具有对应于浮雕图案的互补图案。 接下来，在基板上形成图案层。 然后，将转印模板放置在并覆盖图案层，直到转印模板的第一表面紧密接触图案层的第二表面，使得浮雕图案形成在第二表面上。 之后，图案层通过照射固化。 之后，移除转印模板，以便用浮雕图案露出第二表面。